IRG4PH50UDPBF

Mfr. #:: IRG4PH50UDPBF
제조사:: Infineon Technologies
설명:: IGBT Transistors 1200V ULTRAFAST 5-40 KHZ COPACK IGBT
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRG4PH50UDPBF 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: IGBT 트랜지스터

RoHS:: Y

기술:: 시

패키지/케이스:: TO-247-3

장착 스타일:: 구멍을 통해

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 1.2 kV

수집기-이미터 포화 전압:: 3.7 V

최대 게이트 이미터 전압:: 20 V

25C에서 연속 수집기 전류:: 45 A

Pd - 전력 손실:: 200 W

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

포장:: 튜브

연속 수집가 현재 IC 최대:: 45 A

키:: 20.3 mm

길이:: 15.9 mm

너비:: 5.3 mm

상표:: 인피니언 테크놀로지스

상품 유형:: IGBT 트랜지스터

공장 팩 수량:: 400

하위 카테고리:: IGBT

부품 번호 별칭:: SP001542126

단위 무게:: 1.340411 oz

Tags: IRG4PH50UDP, IRG4PH50UD, IRG4PH50U, IRG4PH5, IRG4PH, IRG4P, IRG4, IRG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRG4PH50UDPBF 설명

***ical: Trans IGBT Chip N-CH 1200V 45A 200000mW 3-Pin(3+Tab) TO-247AC Tube

***eco: Transistor IGBT Chip Negative Channel 1.2K Volt 45A 3-Pin(3+Tab) TO-247AC

***ineon SCT: 1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS

***ure Electronics: IRG4PH50U series 1200 V 45 A Through Hole N-Channel UltraFast IGBT - TO-247AC

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.56 V Current release time: 180 ns Power dissipation: 200 W

***nell: IGBT, 1200V, 45A, TO-247AC; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:45A; Voltage, Vce Sat Max:3.7V; Power Dissipation:200W; Case Style:TO-247AC; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:1200V; Current, Icm Pulsed:180A; No. of Pins:3; Power, Pd:200W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:260ns; Time, Rise:24ns; Transistors, No. of:1

***p One Stop Global: Trans IGBT Chip N-CH 1200V 45A 200000mW 3-Pin(3+Tab) TO-247AC Tube

***ure Electronics: IRG4PH50KDPBF Series 1200 V 24 A N-Channel UltraFast IGBT - TO-247AC

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 3.5 V Current release time: 390 ns Power dissipation: 200 W

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:45A; Collector Emitter Saturation Voltage, Vce(sat):3.5V; Power Dissipation, Pd:200W; Package/Case:TO-247AC ;RoHS Compliant: Yes

***ment14 APAC: IGBT, 1200V, 45A, TO-247AC; Transistor Type:IGBT; DC Collector Current:45A; Collector Emitter Voltage Vces:2.77V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:45A; Current Temperature:25°C; Device Marking:IRG4PH50KDPBF; Fall Time Max:300ns; Fall Time tf:300ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:90A; Rise Time:100ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

***ical: Trans IGBT Chip N-CH 1200V 45A 200000mW 3-Pin(3+Tab) TO-247AC Tube

***ineon SCT: 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 3.5 V Current release time: 280 ns Power dissipation: 200 W

***nell: IGBT, 1.2KV, 45A, TO-247AC-3; DC Collector Current: 45A; Collector Emitter Saturation Voltage Vce(on): 3.28V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AC; No. of Pins

***p One Stop Global: Trans IGBT Chip N-CH 900V 51A 200000mW 3-Pin(3+Tab) TO-247AC Tube

***ure Electronics: IRG4PF50WDPBF Series 900 V 28 A N-Channel UltraFast IGBT - TO-247AC

***ineon SCT: Copacked 900V IGBT in a TO-247AC package with ultrafast 20-100 kHz ultrafast, ultrasoft recovery anti-parallel diode, TO247COPAK-3, RoHS

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 900 V Collector-emitter saturation voltage: 2.7 V Current release time: 190 ns Power dissipation: 200 W

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:51A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:200W; Package/Case:TO-247AC ;RoHS Compliant: Yes

***nell: IGBT, TO-247; Collector Emitter Saturation Voltage Vce(on): 2.25V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 900V; Transistor Case Style: TO-247; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cu

***ment14 APAC: IGBT, 900V, 51A, TO-247AC; Transistor Type:IGBT; DC Collector Current:51A; Collector Emitter Voltage Vces:2.25V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:900V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:51A; Current Temperature:25°C; Device Marking:IRG4PF50WDPbF; Fall Time Max:190ns; Fall Time tf:220ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:204A; Rise Time:52ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:900V

***ure Electronics: IXDH20N120D1 Series 1200 V 38 A N-Channel High Voltage IGBT - TO-247AD

***ical: Trans IGBT Chip N-CH 1200V 38A 200000mW 3-Pin(3+Tab) TO-247AD

***trelec: IGBT Housing type: TO-247AD Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.4 V Current release time: 70 ns Power dissipation: 200 W

***ical: Trans IGBT Chip N-CH 1200V 54A 347000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: APT25Gxx Series 1200 V 54 A 347 W Through Hole Thunderbolt IGBT - TO-247 -3

***rochip: IGBT NPT Medium Frequency Single 1200 V 25 A TO-247

***th Star Micro: Insulated Gate Bipolar Transistor - NPT Standard Speed

***S: French Electronic Distributor since 1988

***ical: Trans IGBT Chip N-CH 1200V 58A 250000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT,1200V,58A,TO-247; DC Collector Current: 58A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AD; No. of Pins: 3Pins;

***ark: Igbt, 1200V, 58A, To-247; Continuous Collector Current:58A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:250W; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:- Rohs Compliant: Yes

Market price

부분 #	제조	설명	재고	가격
IRG4PH50UDPBF DISTI # 30701889	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 45A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	1366	75:$4.9795 3:$5.6448
IRG4PH50UDPBF DISTI # IRG4PH50UDPBF-ND	Infineon Technologies AG	IGBT 1200V 45A 200W TO247AC RoHS: Compliant Min Qty: 1 Container: Bag	3710In Stock	1000:$4.9355 500:$5.6666 100:$6.5075 10:$7.8600 1:$8.7000
IRG4PH50UDPBF DISTI # C1S322000570456	Infineon Technologies AG	IGBT Chip RoHS: Compliant	1372	200:$5.4100 50:$7.0700 1:$11.5000
IRG4PH50UDPBF DISTI # IRG4PH50UDPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 45A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRG4PH50UDPBF) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 1520	1:$5.7900 10:$5.4900 25:$5.2900 50:$5.2900 100:$4.3900 500:$4.1900 1000:$4.1900
IRG4PH50UDPBF DISTI # IRG4PH50UDPBF	Infineon Technologies AG	Transistor IGBT Chip N-CH 1200V 45A 3-Pin TO-247AC Tube (Alt: IRG4PH50UDPBF) RoHS: Not Compliant Min Qty: 4000 Container: Tube	Asia - 0
IRG4PH50UDPBF DISTI # 63J7553	Infineon Technologies AG	SINGLE IGBT, 1.2KV, 45A,DC Collector Current:45A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:200W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- , RoHS Compliant: Yes	42	1:$8.2900 10:$7.4900 25:$7.1400 50:$6.6700 100:$6.2000 250:$5.9200
IRG4PH50UDPBF. DISTI # 26AC0665	Infineon Technologies AG	INDUSTRY 59 , ROHS COMPLIANT: YES	0	1:$8.4600 10:$7.6400 25:$7.1400 50:$6.6700 100:$6.2000 250:$5.9200
IRG4PH50UDPBF DISTI # 70017515	Infineon Technologies AG	IGBT,Copack,1200V UltraFast 5-40 kHz,TO-247AC RoHS: Compliant	468	1:$7.1370 10:$6.2940 100:$5.4870 500:$4.7580 1000:$4.1960
IRG4PH50UDPBF	International Rectifier	RoHS: Not Compliant	4406	1000:$5.1200 500:$5.3900 100:$5.6100 25:$5.8500 1:$6.3000
IRG4PH50UDPBF DISTI # 942-IRG4PH50UDPBF	Infineon Technologies AG	IGBT Transistors 1200V ULTRAFAST 5-40 KHZ COPACK IGBT RoHS: Compliant	2023	1:$8.2900 10:$7.4900 25:$7.1400 100:$6.2000 250:$5.9200 500:$5.4000 1000:$4.7100
IRG4PH50UDPBF	Infineon Technologies AG	IRG4PH50U series 1200 V 45 A Through Hole N-Channel UltraFast IGBT - TO-247AC RoHS: Compliant	2793Tube	2:$5.6000 75:$4.9400
IRG4PH50UDPBF DISTI # 5430355	Infineon Technologies AG	TRANSISTOR IGBT N-CH 1.2KV 45A TO247AC, EA	61	1:£6.4300 25:£5.1600 100:£5.0000 250:£4.7800 500:£4.3600
IRG4PH50UDPBF DISTI # 5430355P	Infineon Technologies AG	TRANSISTOR IGBT N-CH 1.2KV 45A TO247AC, TU	358	25:£5.1600 100:£5.0000 250:£4.7800 500:£4.3600
IRG4PH50UDPBF	International Rectifier	RoHS: Compliant	Europe - 500

영상	부분 #	설명
	Mfr.#: HGTG10N120BND OMO.#: OMO-HGTG10N120BND	IGBT Transistors 35A 1200V N-Ch
	Mfr.#: IRG4PF50WDPBF OMO.#: OMO-IRG4PF50WDPBF	IGBT Transistors 900V Warp 20-100kHz
	Mfr.#: RHRP1560 OMO.#: OMO-RHRP1560	Rectifiers 15A 600V
	Mfr.#: RHRP15120 OMO.#: OMO-RHRP15120	Rectifiers 15A 1200V
	Mfr.#: IRF840PBF OMO.#: OMO-IRF840PBF	MOSFET N-CH 500V HEXFET MOSFET
	Mfr.#: IRFP264PBF OMO.#: OMO-IRFP264PBF	MOSFET N-CH 250V HEXFET MOSFET
	Mfr.#: IRF3710PBF OMO.#: OMO-IRF3710PBF	MOSFET MOSFT 100V 57A 23mOhm 86.7nC
	Mfr.#: HGTG10N120BND OMO.#: OMO-HGTG10N120BND-ON-SEMICONDUCTOR	IGBT 1200V 35A 298W TO247
	Mfr.#: RHRP15120 OMO.#: OMO-RHRP15120-ON-SEMICONDUCTOR	Diodes - General Purpose, Power, Switching 15A 1200V
	Mfr.#: RHRP1560 OMO.#: OMO-RHRP1560-ON-SEMICONDUCTOR	DIODE GEN PURP 600V 15A TO220AC

IRG4PH50UDPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes