IRF6708S2TR1PBF

Mfr. #:: IRF6708S2TR1PBF
제조사:: Infineon / IR
설명:: MOSFET 30V 1 N-CH HEXFET DIRECTFET S1
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRF6708S2TR1PBF 데이터 시트
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HTML Datasheet:: IRF6708S2TR1PBF Datasheet IRF6708S2TR1PBF Datasheet (P4-P6)IRF6708S2TR1PBF Datasheet (P7-P9)IRF6708S2TR1PBF Datasheet (P10)
ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: DirectFET-S1

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 30 V

Id - 연속 드레인 전류:: 36 A

Rds On - 드레인 소스 저항:: 14.3 mOhms

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 6.6 nC

Pd - 전력 손실:: 20 W

구성:: 하나의

포장:: 릴

키:: 0.74 mm

길이:: 4.85 mm

트랜지스터 유형:: 1 N-Channel

너비:: 3.95 mm

상표:: 인피니언 / IR

상품 유형:: MOSFET

공장 팩 수량:: 1000

하위 카테고리:: MOSFET

부품 번호 별칭:: SP001523958

단위 무게:: 0.017637 oz

Tags: IRF670, IRF67, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF6708S2TR1PBF 설명

***ical: Trans MOSFET N-CH 30V 13A 6-Pin Direct-FET S1 T/R

***ied Electronics & Automation: MOSFET N-Ch 30V 13A HEXFET Direct-FET S1

***ment14 APAC: MOSFET, N CH, 30V, 13A, DIRECTFET LV

***i-Key: MOSFET N-CH 30V 13A DIRECTFET-LV

***ernational Rectifier: A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 13 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***ark: MOSFET, N CH, 30V, 13A, DIRECTFET LV; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power ;RoHS Compliant: Yes

***nell: MOSFET, N CH, 30V, 13A, DIRECTFET LV; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:20W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DirectFET; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Pulse Current Idm:110A; Voltage Vgs th Min:1.35V

Market price

부분 #	제조	설명	재고	가격
IRF6708S2TR1PBF DISTI # IRF6708S2TR1PBF-ND	Infineon Technologies AG	MOSFET N-CH 30V 13A DIRECTFET-LV RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF6708S2TR1PBF DISTI # 942-IRF6708S2TR1PBF	Infineon Technologies AG	MOSFET 30V 1 N-CH HEXFET DIRECTFET S1 RoHS: Compliant	0

관련 상품

영상	부분 #	설명
	Mfr.#: IRF6708S2TR1PBF OMO.#: OMO-IRF6708S2TR1PBF	MOSFET 30V 1 N-CH HEXFET DIRECTFET S1
	Mfr.#: IRF6708S2TRPBF OMO.#: OMO-IRF6708S2TRPBF	MOSFET
	Mfr.#: IRF6708S2TR1PBF OMO.#: OMO-IRF6708S2TR1PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 13A DIRECTFET-LV
	Mfr.#: IRF6708S2TRPBF OMO.#: OMO-IRF6708S2TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 13A DIRECTFET-LV

유효성

재고:: Available
주문 시:: 2500
수량 입력:

IRF6708S2TR1PBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

시작

IRF670 6
IRF67 80
IRF6 688
IRF 8615

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IRF6708S2TR1PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes