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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| IPB107N20N3GATMA1 DISTI # IPB107N20N3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 200V 88A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | On Order |
|
| IPB107N20N3GATMA1 DISTI # IPB107N20N3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 200V 88A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
|
| IPB107N20N3GATMA1 DISTI # IPB107N20N3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 200V 88A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
| IPB107N20N3 G DISTI # IPB107N20N3 G | Infineon Technologies AG | Trans MOSFET N-CH 200V 88A 3-Pin TO-263 T/R (Alt: IPB107N20N3 G) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Asia - 0 | |
| IPB107N20N3GATMA1 DISTI # IPB107N20N3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB107N20N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| IPB107N20N3GATMA1 DISTI # 79X1432 | Infineon Technologies AG | MOSFET, N-CH, 200V, 88A, TO-263- 3,Transistor Polarity:N Channel,Continuous Drain Current Id:88A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0096ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes | 0 |
|
| IPB107N20N3 G DISTI # 726-IPB107N20N3GXT | Infineon Technologies AG | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 RoHS: Compliant | 0 |
|
| IPB107N20N3GATMA1 DISTI # 726-IPB107N20N3GATMA | Infineon Technologies AG | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 RoHS: Compliant | 0 |
|
| IPB107N20N3GATMA1 DISTI # 7545434 | Infineon Technologies AG | MOSFET N-CHANNEL 200V 88A TO263, EA | 6 |
|
| IPB107N20N3G | Infineon Technologies AG | POWER FIELD-EFFECT TRANSISTOR, 88A I(D), 200V, 0.0107OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 865 |
|
| IPB107N20N3 G | Infineon Technologies AG | INSTOCK | 25762 | |
| IPB107N20N3GATMA1 DISTI # 2432725RL | Infineon Technologies AG | MOSFET, N CH, 200V, 88A, TO-263-3 RoHS: Compliant | 0 |
|
| IPB107N20N3GATMA1 DISTI # 2432725 | Infineon Technologies AG | MOSFET, N CH, 200V, 88A, TO-263-3 RoHS: Compliant | 0 |
|
| IPB107N20N3GATMA1 DISTI # 2432725 | Infineon Technologies AG | MOSFET, N CH, 200V, 88A, TO-263-3 RoHS: Compliant | 0 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: IPB107N20NAXT OMO.#: OMO-IPB107N20NAXT |
MOSFET N-Ch 200V 88A D2PAK-2 |
|
|
Mfr.#: IPB107N20NA OMO.#: OMO-IPB107N20NA |
MOSFET N-Ch 200V 88A D2PAK-2 |
|
|
Mfr.#: IPB107N20NAATMA1 OMO.#: OMO-IPB107N20NAATMA1 |
MOSFET Mosfet, DCtoDC Nchannel 200V |
|
Mfr.#: IPB107N20N3G OMO.#: OMO-IPB107N20N3G-1190 |
POWER FIELD-EFFECT TRANSISTOR, 88A I(D), 200V, 0.0107OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB |
|
|
Mfr.#: IPB107N20N3 OMO.#: OMO-IPB107N20N3-1190 |
신규 및 오리지널 |
|
|
Mfr.#: IPB107N20N3 G OMO.#: OMO-IPB107N20N3-G-1190 |
Trans MOSFET N-CH 200V 88A 3-Pin TO-263 T/R (Alt: IPB107N20N3 G) |
|
|
Mfr.#: IPB107N20N3G , 2SD1949K- |
신규 및 오리지널 |
|
|
Mfr.#: IPB107N20N3G 0.2W OMO.#: OMO-IPB107N20N3G-0-2W-1190 |
신규 및 오리지널 |
|
|
Mfr.#: IPB107N20NA OMO.#: OMO-IPB107N20NA-1190 |
- Bulk (Alt: IPB107N20NA) |
|
Mfr.#: IPB107N20NAATMA1 |
MOSFET N-CH 200V 88A TO263-3 |