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| PartNumber | IPB107N20N3 G | IPB107N20N3G | IPB107N20N3 |
| Description | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 | POWER FIELD-EFFECT TRANSISTOR, 88A I(D), 200V, 0.0107OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | |
| Manufacturer | Infineon | INFINEON | Infineon Technologies |
| Product Category | MOSFET | FETs - Single | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 88 A | - | - |
| Rds On Drain Source Resistance | 9.6 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 87 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | OptiMOS |
| Packaging | Reel | - | Reel |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 3 | - | OptiMOS 3 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 71 S | - | - |
| Fall Time | 11 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 26 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 41 ns | - | - |
| Typical Turn On Delay Time | 18 ns | - | - |
| Part # Aliases | IPB107N20N3GATMA1 IPB17N2N3GXT SP000676406 | - | - |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Part Aliases | - | - | IPB107N20N3GATMA1 IPB107N20N3GXT SP000676406 |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 300 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 88 A |
| Vds Drain Source Breakdown Voltage | - | - | 200 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V |
| Rds On Drain Source Resistance | - | - | 10.7 mOhms |
| Qg Gate Charge | - | - | 65 nC |
| Forward Transconductance Min | - | - | 141 S 71 S |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB107N20N3 G | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 | |
| IPB107N20N3GATMA1 | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 | ||
| IPB107N20N3GATMA1 | MOSFET N-CH 200V 88A TO263-3 | ||
| IPB107N20N3G | POWER FIELD-EFFECT TRANSISTOR, 88A I(D), 200V, 0.0107OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | ||
| IPB107N20N3 | 신규 및 오리지널 | ||
| IPB107N20N3 G | Trans MOSFET N-CH 200V 88A 3-Pin TO-263 T/R (Alt: IPB107N20N3 G) | ||
| IPB107N20N3G 107N20N | 신규 및 오리지널 | ||
| IPB107N20N3G , 2SD1949K- | 신규 및 오리지널 | ||
| IPB107N20N3G 0.2W | 신규 및 오리지널 | ||
| IPB107N20N3GS | 신규 및 오리지널 | ||
| IPB107N20N3GXT | 신규 및 오리지널 |