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IPB048N15N5LFATMA1

IPB048N15N5LFATMA1
Mfr. #:
IPB048N15N5LFATMA1
제조사:
Infineon Technologies
설명:
MOSFET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPB048N15N5LFATMA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPB048N15N5LFATMA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
TO-263-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
150 V
Id - 연속 드레인 전류:
120 A
Rds On - 드레인 소스 저항:
3.9 mOhms
Vgs th - 게이트 소스 임계 전압:
3.3 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
84 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
313 W
구성:
하나의
채널 모드:
상승
상표명:
옵티모스
포장:
릴
시리즈:
OptiMOS 5
트랜지스터 유형:
1 N-Channel
상표:
인피니언 테크놀로지스
순방향 트랜스컨덕턴스 - 최소:
17 S
가을 시간:
10 ns
상품 유형:
MOSFET
상승 시간:
48 ns
공장 팩 수량:
1000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
42 ns
일반적인 켜기 지연 시간:
8 ns
부품 번호 별칭:
IPB048N15N5LF SP001503860
단위 무게:
0.077603 oz
Tags
IPB048N1, IPB048, IPB04, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 150V 120A 3-Pin(2+Tab) D2PAK T/R
***i-Key
MOSFET N-CH 150V 120A TO263-3
***et Europe
DIFFERENTIATED MOSFETS
***ark
Mosfet, N-Ch, 150V, 120A, 313W, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:150V; On Resistance Rds(On):0.0039Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.1V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 150V, 120A, 313W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.1V; Power Dissipation Pd:313W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CAN N, 150V, 120A, 313W, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:120A; Tensione Drain Source Vds:150V; Resistenza di Attivazione Rds(on):0.0039ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4.1V; Dissipazione di Potenza Pd:313W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:OptiMOS 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
OptiMOS Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET. | Summary of Features: Combination of low R DS(on) and wide safe operating area (SOA); High max. pulse current; High continuous pulse current | Benefits: Rugged linear mode operation; Low conduction losses; Higher in-rush current enabled for faster start-up and shorter down time | Target Applications: Telecom; Battery management
Light Electric Vehicles (LEV)
Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.
부분 # 제조 설명 재고 가격
IPB048N15N5LFATMA1
DISTI # V72:2272_18205007		Infineon Technologies AGDIFFERENTIATED MOSFETS873
  • 75000:$3.5970
  • 30000:$3.6260
  • 15000:$3.6560
  • 6000:$3.6850
  • 3000:$3.7140
  • 1000:$3.7430
  • 500:$3.7720
  • 250:$3.8010
  • 100:$4.2230
  • 50:$4.6929
  • 25:$5.2140
  • 10:$5.7940
  • 1:$6.9420
IPB048N15N5LFATMA1
DISTI # IPB048N15N5LFATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 150V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 1000:$4.6452
IPB048N15N5LFATMA1
DISTI # IPB048N15N5LFATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 150V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 500:$5.4934
  • 100:$6.5566
  • 10:$7.9740
  • 1:$8.8600
IPB048N15N5LFATMA1
DISTI # IPB048N15N5LFATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 150V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 500:$5.4934
  • 100:$6.5566
  • 10:$7.9740
  • 1:$8.8600
IPB048N15N5LFATMA1
DISTI # 32379016		Infineon Technologies AGDIFFERENTIATED MOSFETS873
  • 6000:$3.9614
  • 3000:$3.9926
  • 1000:$4.0237
  • 500:$4.0549
  • 250:$4.0861
  • 100:$4.5397
  • 50:$5.0449
  • 25:$5.6051
  • 10:$6.2286
  • 2:$7.4627
IPB048N15N5LFATMA1
DISTI # IPB048N15N5LFATMA1		Infineon Technologies AGDIFFERENTIATED MOSFETS - Tape and Reel (Alt: IPB048N15N5LFATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$4.4900
  • 2000:$4.2900
  • 4000:$4.0900
  • 6000:$3.9900
  • 10000:$3.8900
IPB048N15N5LFATMA1
DISTI # SP001503860		Infineon Technologies AGDIFFERENTIATED MOSFETS (Alt: SP001503860)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 1000:€4.1900
  • 2000:€3.9900
  • 4000:€3.8900
  • 6000:€3.5900
  • 10000:€3.3900
IPB048N15N5LFATMA1
DISTI # 93AC7100		Infineon Technologies AGMOSFET, N-CH, 150V, 120A, 313W, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.0039ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.1V,Power RoHS Compliant: Yes910
  • 500:$3.8700
  • 250:$4.2500
  • 100:$4.4500
  • 50:$4.7900
  • 25:$5.1300
  • 10:$5.3800
  • 1:$5.9500
IPB048N15N5LFATMA1
DISTI # 726-IPB048N15N5LF		Infineon Technologies AGMOSFET
RoHS: Compliant		363
  • 1:$7.4400
  • 10:$6.7200
  • 25:$6.4100
  • 100:$5.5600
  • 250:$5.3100
  • 500:$4.8400
  • 1000:$4.2200
IPB048N15N5LFATMA1
DISTI # 2986458		Infineon Technologies AGMOSFET, N-CH, 150V, 120A, 313W, TO-263
RoHS: Compliant		898
  • 100:$6.3100
  • 50:$7.0455
  • 25:$8.1801
  • 10:$8.3265
  • 5:$8.9853
  • 1:$9.9552
IPB048N15N5LFATMA1
DISTI # 2986458		Infineon Technologies AGMOSFET, N-CH, 150V, 120A, 313W, TO-263
RoHS: Compliant		898
  • 100:£4.4700
  • 50:£4.8200
  • 10:£5.1700
  • 5:£5.9600
  • 1:£6.4900
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유효성
재고:
Available
주문 시:
3000
수량 입력:
IPB048N15N5LFATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$7.44
US$7.44
10
US$6.72
US$67.20
25
US$6.41
US$160.25
100
US$5.56
US$556.00
250
US$5.31
US$1 327.50
500
US$4.84
US$2 420.00
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