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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| BSC016N06NSATMA1 DISTI # BSC016N06NSATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 60V 30A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 19997In Stock |
|
| BSC016N06NSATMA1 DISTI # BSC016N06NSATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 60V 30A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 19997In Stock |
|
| BSC016N06NSATMA1 DISTI # BSC016N06NSATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 60V 30A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | 10000In Stock |
|
| BSC016N06NSATMA1 DISTI # BSC016N06NSATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC016N06NSATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC016N06NSATMA1 DISTI # BSC016N06NS | Infineon Technologies AG | Trans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R (Alt: BSC016N06NS) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Asia - 0 | |
| BSC016N06NSATMA1 DISTI # 79X1327 | Infineon Technologies AG | MOSFET, N-CH, 60V, 100A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes | 0 |
|
| BSC016N06NSATMA1. DISTI # 27AC1071 | Infineon Technologies AG | Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power Dissipation Pd:139W,No. of Pins:8Pins RoHS Compliant: Yes | 0 |
|
| BSC016N06NS DISTI # 726-BSC016N06NS | Infineon Technologies AG | MOSFET N-Ch 60V 100A DSON-8 OptiMOS RoHS: Compliant | 143 |
|
| BSC016N06NSATMA1 DISTI # 726-BSC016N06NSATMA1 | Infineon Technologies AG | MOSFET N-Ch 60V 100A DSON-8 OptiMOS RoHS: Compliant | 0 |
|
| BSC016N06NSATMA1 DISTI # 2432702 | Infineon Technologies AG | MOSFET, N CH, 60V, 100A, TDSON-8 RoHS: Compliant | 0 |
|
| BSC016N06NSATMA1 DISTI # 2432702 | Infineon Technologies AG | MOSFET, N CH, 60V, 100A, TDSON-8 RoHS: Compliant | 0 |
|
| BSC016N06NSATMA1 DISTI # 2432702RL | Infineon Technologies AG | MOSFET, N CH, 60V, 100A, TDSON-8 RoHS: Compliant | 0 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: BSC016N06NS OMO.#: OMO-BSC016N06NS |
MOSFET N-Ch 60V 100A DSON-8 OptiMOS |
|
|
Mfr.#: BSC016N06NSATMA1 OMO.#: OMO-BSC016N06NSATMA1 |
MOSFET N-Ch 60V 100A DSON-8 OptiMOS |
|
|
Mfr.#: BSC016N03MSGATMA1 OMO.#: OMO-BSC016N03MSGATMA1 |
MOSFET LV POWER MOS |
|
Mfr.#: BSC016N03LSGXT/BKN OMO.#: OMO-BSC016N03LSGXT-BKN-1190 |
INSTOCK |
|
|
Mfr.#: BSC016N03KSG OMO.#: OMO-BSC016N03KSG-1190 |
신규 및 오리지널 |
|
|
Mfr.#: BSC016N03LSG OMO.#: OMO-BSC016N03LSG-1190 |
Power Field-Effect Transistor, 32A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC016N03MS G OMO.#: OMO-BSC016N03MS-G-1190 |
Trans MOSFET N-CH 30V 28A 8-Pin TDSON T/R (Alt: BSC016N03MS G) |
|
|
Mfr.#: BSC016N03MSGXT OMO.#: OMO-BSC016N03MSGXT-1190 |
신규 및 오리지널 |
|
Mfr.#: BSC016N06NSATMA1 |
MOSFET N-CH 60V 30A TDSON-8 |
|
|
Mfr.#: BSC016N06NSXT OMO.#: OMO-BSC016N06NSXT-1190 |
신규 및 오리지널 |