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SPB18P06PGATMA1

SPB18P06PGATMA1
Mfr. #:
SPB18P06PGATMA1
제조사:
Infineon Technologies
설명:
MOSFET P-CH 60V 18.7A TO-263
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SPB18P06PGATMA1 데이터 시트
배달:
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지불:
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ECAD Model:
제품 속성
속성 값
제조사
인피니언 테크놀로지스
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
시리즈
XPB18P06
포장
릴
부분 별칭
G SP000102181 SPB18P06P SPB18P06PGXT
패키지 케이스
TO-263-3
기술
시
채널 수
1 Channel
트랜지스터형
1 P-Channel
트랜지스터 극성
P-채널
Tags
SPB18P06PG, SPB18P, SPB18, SPB1, SPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, P-CH, 60V, 18.7A, TO-263; Transistor Polarity:P Channel; Continuous Drai
***ure Electronics
Single P-Channel 60 V 130 mOhm 21 nC SIPMOS® Power Mosfet - D2PAK
***ow.cn
Trans MOSFET P-CH 60V 18.7A Automotive 3-Pin(2+Tab) D2PAK T/R
***nell
MOSFET, P-CH, 60V, 18.7A, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-18.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.101ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:81.1W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
부분 # 제조 설명 재고 가격
SPB18P06PGATMA1
DISTI # V72:2272_06384573		Infineon Technologies AGTrans MOSFET P-CH 60V 18.6A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$0.4878
  • 500:$0.5168
  • 250:$0.5742
  • 100:$0.6380
  • 25:$0.7977
  • 10:$0.8010
  • 1:$0.9051
SPB18P06PGATMA1
DISTI # SPB18P06PGATMA1CT-ND		Infineon Technologies AGMOSFET P-CH 60V 18.7A TO-263
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1955In Stock
  • 500:$0.7565
  • 100:$0.9754
  • 10:$1.2340
  • 1:$1.3900
SPB18P06PGATMA1
DISTI # SPB18P06PGATMA1DKR-ND		Infineon Technologies AGMOSFET P-CH 60V 18.7A TO-263
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1955In Stock
  • 500:$0.7565
  • 100:$0.9754
  • 10:$1.2340
  • 1:$1.3900
SPB18P06PGATMA1
DISTI # SPB18P06PGATMA1TR-ND		Infineon Technologies AGMOSFET P-CH 60V 18.7A TO-263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 1000:$0.5798
SPB18P06PGATMA1
DISTI # 30205349		Infineon Technologies AGTrans MOSFET P-CH 60V 18.6A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		10000
  • 1000:$0.5322
SPB18P06PGATMA1
DISTI # 30679613		Infineon Technologies AGTrans MOSFET P-CH 60V 18.6A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$0.4878
  • 500:$0.5168
  • 250:$0.5742
  • 100:$0.6380
  • 25:$0.7977
  • 17:$0.8010
SPB18P06P G
DISTI # SPB18P06PGATMA1		Infineon Technologies AGTrans MOSFET P-CH 60V 18.6A 3-Pin TO-263 T/R - Tape and Reel (Alt: SPB18P06PGATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$0.4049
  • 2000:$0.3899
  • 4000:$0.3759
  • 6000:$0.3629
  • 10000:$0.3569
SPB18P06PGATMA1
DISTI # 47W3753		Infineon Technologies AGMOSFET, P CHANNEL, 60V, 18.7A, TO-263,Transistor Polarity:P Channel,Continuous Drain Current Id:-18.7A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.101ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V , RoHS Compliant: Yes110
  • 1:$1.2800
  • 10:$1.0800
  • 100:$0.8320
  • 500:$0.7350
SPB18P06PGATMA1
DISTI # 726-SPB18P06PGATMA1		Infineon Technologies AGMOSFET P-Ch -60V 18.6A D2PAK-2
RoHS: Compliant		1830
  • 1:$1.1600
  • 10:$0.9840
  • 100:$0.7560
  • 500:$0.6680
  • 1000:$0.5280
SPB18P06P G
DISTI # 726-SPB18P06PG		Infineon Technologies AGMOSFET P-Ch -60V 18.6A D2PAK-2
RoHS: Compliant		1373
  • 1:$1.1600
  • 10:$0.9840
  • 100:$0.7560
  • 500:$0.6680
  • 1000:$0.5280
SPB18P06PGATMA1Infineon Technologies AGPower Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		450
  • 1000:$0.5000
  • 500:$0.5300
  • 100:$0.5500
  • 25:$0.5700
  • 1:$0.6200
SPB18P06PGATMA1Infineon Technologies AGSingle P-Channel 60 V 130 mOhm 21 nC SIPMOS Power Mosfet - D2PAK
RoHS: Not Compliant		1000Reel
  • 1000:$0.4500
  • 2000:$0.4350
SPB18P06PGATMA1
DISTI # 7533169P		Infineon Technologies AGMOSFET P-CHANNEL 60V 18.6A SIPMOS TO263, RL695
  • 10:£0.7120
  • 25:£0.6840
  • 50:£0.6560
  • 100:£0.5460
SPB18P06PGATMA1
DISTI # XSFP00000115904		Infineon Technologies AGRISCMicrocontroller,32-Bit,FLASH,CORTEX-M3CPU,48MHz,CMOS, PQFP64
RoHS: Compliant		906
  • 223:$0.6000
  • 906:$0.5625
SPB18P06PGATMA1
DISTI # 2212884		Infineon Technologies AGMOSFET, P-CH, 60V, 18.7A, TO-263
RoHS: Compliant		115
  • 5:£0.7260
  • 25:£0.6690
  • 100:£0.5570
  • 250:£0.5300
  • 500:£0.5030
SPB18P06PGATMA1
DISTI # C1S322000626588		Infineon Technologies AGMOSFETs
RoHS: Compliant		1000
  • 250:$0.5742
  • 100:$0.6380
  • 25:$0.7977
  • 10:$0.8010
SPB18P06PGATMA1
DISTI # C1S322000465871		Infineon Technologies AGMOSFETs
RoHS: Compliant		10000
  • 2000:$0.4910
  • 1000:$0.5930
SPB18P06PGATMA1
DISTI # 2212884		Infineon Technologies AGMOSFET, P-CH, 60V, 18.7A, TO-263
RoHS: Compliant		133
  • 1:$1.8400
  • 10:$1.5600
  • 100:$1.2000
  • 500:$1.0700
  • 1000:$0.8360
영상 부분 # 설명
SPB18P06PGATMA1

Mfr.#: SPB18P06PGATMA1

OMO.#: OMO-SPB18P06PGATMA1

 MOSFET P-Ch -60V 18.6A D2PAK-2
SPB18P06P G

Mfr.#: SPB18P06P G

OMO.#: OMO-SPB18P06P-G

 MOSFET P-Ch -60V 18.6A D2PAK-2
SPB18P06PGATMA1-CUT TAPE

Mfr.#: SPB18P06PGATMA1-CUT TAPE

OMO.#: OMO-SPB18P06PGATMA1-CUT-TAPE-1190

 신규 및 오리지널
SPB18P06P

Mfr.#: SPB18P06P

OMO.#: OMO-SPB18P06P-INFINEON-TECHNOLOGIES

 MOSFET P-CH 60V 18.7A D2PAK
SPB18P06P 18P06P

Mfr.#: SPB18P06P 18P06P

OMO.#: OMO-SPB18P06P-18P06P-1190

 신규 및 오리지널
SPB18P06P G

Mfr.#: SPB18P06P G

OMO.#: OMO-SPB18P06P-G-1190

 Trans MOSFET P-CH 60V 18.6A Automotive 3-Pin(2+Tab) TO-263
SPB18P06PG

Mfr.#: SPB18P06PG

OMO.#: OMO-SPB18P06PG-1190

 Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
SPB18P06PGATMA1

Mfr.#: SPB18P06PGATMA1

OMO.#: OMO-SPB18P06PGATMA1-INFINEON-TECHNOLOGIES

 MOSFET P-CH 60V 18.7A TO-263
SPB18P06PGS

Mfr.#: SPB18P06PGS

OMO.#: OMO-SPB18P06PGS-1190

 신규 및 오리지널
유효성
재고:
Available
주문 시:
3500
수량 입력:
SPB18P06PGATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$0.54
US$0.54
10
US$0.51
US$5.13
100
US$0.49
US$48.60
500
US$0.46
US$229.50
1000
US$0.43
US$432.00
시작
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