IRF6716MTR1PBF

Mfr. #:: IRF6716MTR1PBF
제조사:: Infineon / IR
설명:: MOSFET 25V 1 N-CH HEXFET 1.6mOhms 39nC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRF6716MTR1PBF 데이터 시트
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HTML Datasheet:: IRF6716MTR1PBF Datasheet IRF6716MTR1PBF Datasheet (P4-P6)IRF6716MTR1PBF Datasheet (P7-P9)
ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: DirectFET-MX

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 25 V

Id - 연속 드레인 전류:: 39 A

Rds On - 드레인 소스 저항:: 2.6 mOhms

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 39 nC

Pd - 전력 손실:: 78 W

구성:: 하나의

포장:: 릴

키:: 0.7 mm

길이:: 6.35 mm

트랜지스터 유형:: 1 N-Channel

너비:: 5.05 mm

상표:: 인피니언 / IR

습기에 민감한:: 네

상품 유형:: MOSFET

공장 팩 수량:: 1000

하위 카테고리:: MOSFET

부품 번호 별칭:: SP001532376

Tags: IRF6716M, IRF6716, IRF671, IRF67, IRF6, IRF

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF6716MTR1PBF 설명

***ical: Trans MOSFET N-CH 25V 39A 7-Pin Direct-FET MX T/R

***ernational Rectifier: A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 39 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***ark: Mosfet IC; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:25V; Continuous Drain Current, Id:39A; On Resistance, Rds(on):1.2mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:MX ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, DIRECTFET, 25V, MX; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.2mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.9V; Transistor Case Style:MX; No. of Pins:5; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Base Number:6716; Current Id Max:39A; Package / Case:MX; Power Dissipation Pd:3.6mW; Pulse Current Idm:320A; SMD Marking:3.6; Termination Type:SMD; Voltage Vds:25V; Voltage Vds Typ:25V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.4V; Voltage Vgs th Min:1.4V

***(Formerly Allied Electronics): MOSFET, N-Ch, VDSS 25V, RDS(ON) 1.3 mOhm, ID 24A, DirectFET

***ernational Rectifier: A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 34 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***ment14 APAC: MOSFET, N, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:2.8W; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET MX; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Current Id Max:34A; Package / Case:MX; Power Dissipation Pd:2.8W; Pulse Current Idm:270A; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1.4V

***ical: Trans MOSFET N-CH 25V 36A 7-Pin Direct-FET MX T/R

***ernational Rectifier: A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 36 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***ment14 APAC: MOSFET, N-CH, 25V, DIRECTFETMX; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:MX; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:DirectFET; Current Id Max:36A; Package / Case:MX; Power Dissipation Pd:2.8W; Pulse Current Idm:300A; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V; Voltage Vgs th Min:1.35V

***ical: Trans MOSFET N-CH 25V 38A 7-Pin Direct-FET MX T/R

***ernational Rectifier: A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 38 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***ment14 APAC: MOSFET N CH, 25V 38A SMD; Transistor Polarity:N Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:96W; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET MX; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Current Id Max:220A; Driver Case Style:MX; Package / Case:L6; Power Dissipation Pd:2.8W; Power Dissipation Pd:96W; Pulse Current Idm:38A; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1.35V

***(Formerly Allied Electronics): A 30V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET MX PACKAGE RATED AT 31

***ark: N Channel, MOSFET, 30V, 32A, DirectFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00122ohm; Rds(on) Test Voltage, Vgs:10V ;RoHS Compliant: Yes

***nell: MOSFET, N CH, 30V, 31A, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:190A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:104W; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET MX; No. of Pins:7; SVHC:No SVHC (19-Dec-2011)

***icroelectronics: N-channel 30 V, 0.0014 Ohm typ., 35 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 package

*** Source Electronics: Trans MOSFET N-CH 30V 195A 8-Pin Power Flat T/R / MOSFET N-CH 30V 35A POWERFLAT6X5

***ure Electronics: N-Channel 30 V 1.75 mOhm Surface Mount STripFET V MosFet - PowerFLAT 5x6

***ark: Mosfet, N Channel, 30V, 35A, Powerflat6X5; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35A; On Resistance Rds(On):0.0014Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10Vrohs Compliant: Yes

***ical: Trans MOSFET N-CH 20V 32A 7-Pin Direct-FET MT T/R

***ment14 APAC: MOSFET, N, DIRECTFET, 20V, MT; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:20V; On Resistance Rds(on):1.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Transistor Case Style:DirectFET; No. of Pins:5; SVHC:No SVHC (20-Jun-2011); Base Number:6691; Current Id Max:26A; Package / Case:MT; Power Dissipation Pd:2.8mW; Pulse Current Idm:260A; SMD Marking:2.8; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1.6V

***ernational Rectifier: A 20V Single N-Channel HEXFET Power MOSFET with integrated monolithic Schottky diode with 20 volt gate in a DirectFET MT package rated at 180 amperes optimized with low on resistance for applications such as active ORing. Shipped in Tape and Reel only.

Market price

부분 #	제조	설명	재고	가격
IRF6716MTR1PBF DISTI # IRF6716MTR1PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 25V 39A DIRECTFET RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF6716MTR1PBF DISTI # IRF6716MTR1PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 25V 39A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRF6716MTR1PBF DISTI # IRF6716MTR1PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 25V 39A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRF6716MTR1PBF DISTI # 70018859	Infineon Technologies AG	600V Ultrafast 8-25 kHz COPACK IGBT In a D2-PAK Package RoHS: Compliant	0	1000:$1.8200 2000:$1.6500
IRF6716MTR1PBF DISTI # 942-IRF6716MTR1PBF	Infineon Technologies AG	MOSFET 25V 1 N-CH HEXFET 1.6mOhms 39nC RoHS: Compliant	0
IRF6716MTR1PBF DISTI # 1436939	Infineon Technologies AG	MOSFET, N, DIRECTFET, 25V, MX RoHS: Compliant	0	1:$5.0800 10:$4.1800 100:$3.3900 250:$3.0300 500:$2.6800 1000:$2.5000

영상	부분 #	설명
	Mfr.#: IRF6716MTRPBF OMO.#: OMO-IRF6716MTRPBF	MOSFET 25V 1 N-CH HEXFET 1.6mOhms 39nC
	Mfr.#: IRF6716MTR1PBF OMO.#: OMO-IRF6716MTR1PBF	MOSFET 25V 1 N-CH HEXFET 1.6mOhms 39nC
	Mfr.#: IRF6716MTR1PBF OMO.#: OMO-IRF6716MTR1PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 25V 39A DIRECTFET
	Mfr.#: IRF6716MTRPBF. OMO.#: OMO-IRF6716MTRPBF--1190	신규 및 오리지널
	Mfr.#: IRF6716PBF OMO.#: OMO-IRF6716PBF-1190	신규 및 오리지널
	Mfr.#: IRF6716MTRPBF OMO.#: OMO-IRF6716MTRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 25V 39A DIRECTFET

IRF6716MTR1PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes