TGF2040

TGF2040
Mfr. #:
TGF2040
제조사:
Qorvo
설명:
RF JFET Transistors DC-20GHz NF 1.1dB Gain 13dB P1dB 26dBm
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
TGF2040 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
TGF2040 추가 정보
제품 속성
속성 값
제조사
트라이퀸트(Qorvo)
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
시리즈
TGF
포장
젤팩
부분 별칭
1098615
장착 스타일
SMD/SMT
작동 온도 범위
- 65 C to + 150 C
기술
GaAs
구성
하나의
트랜지스터형
pHEMT
얻다
13 dB
Pd 전력 손실
1.4 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 65 C
동작 주파수
20 GHz
Id-연속-드레인-전류
129 mA
Vds-드레인-소스-고장-전압
8 V
순방향 트랜스컨덕턴스-최소
155 mS
Vgs-Gate-Source-Breakdown-Voltage
- 15 V
NF-노이즈-피겨
1.1 dB
P1dB-압축점
26 dBm
Tags
TGF20, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Triquint GaAs pHEMt Low Noise Amplifiers
TriQuint offers a wide variety of discrete transistor components using TriQuint's state-of-the-art ultra-low-noise 0.13µm pHEMT and 0.25µm E-pHEMT processes. These discrete devices allow customers full control when designing the circuits of low noise amplifiers (LNAs). The various discrete FETs offer NFmin as low as 0.15 dB and are usable up to 22 GHz. Matched pair transistors are also available and are ideal for balanced LNA designs.Learn More
TGF2040/60 Discrete GaAs pHEMTs
Qorvo TGF2040 400µm Discrete GaAs pHEMT and TGF2060 600µm Discrete GaAs pHEMT operate from DC to 20GHz and are designed to optimize microwave power and efficiency at high drain bias operating conditions. TGF2040 pHEMT typically provides 26dBm of output power at P1dB with gain of 13dB and 55% power-added efficiency at 1dB compression while TGF2060 typically provides 28dBm of output power at P1dB with gain of 12dB and 55% power-added efficiency at 1dB compression. Qorvo TGF2040 and TGF2060 pHEMTs are appropriate for high efficiency applications. Theses transistors feature a protective overcoat layer with silicon nitride that provides a level of environmental robustness and scratch protection.Learn More
부분 # 제조 설명 재고 가격
TGF2040
DISTI # 772-TGF2040
QorvoRF JFET Transistors DC-20GHz NF 1.1dB Gain 13dB P1dB 26dBm
RoHS: Compliant
300
  • 100:$6.6300
  • 300:$6.1900
  • 500:$5.7900
  • 1000:$5.4100
영상 부분 # 설명
TGF2934

Mfr.#: TGF2934

OMO.#: OMO-TGF2934

RF JFET Transistors DC-25GHz 14Watt NF 1.5dB GaN
TGF2819-FL

Mfr.#: TGF2819-FL

OMO.#: OMO-TGF2819-FL-318

RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
TGF3015-SM

Mfr.#: TGF3015-SM

OMO.#: OMO-TGF3015-SM-318

RF JFET Transistors .03-3GHz Gain 17dB P3dB [email protected] GaN
TGF120-EPU

Mfr.#: TGF120-EPU

OMO.#: OMO-TGF120-EPU-1190

신규 및 오리지널
TGF1350-SCC

Mfr.#: TGF1350-SCC

OMO.#: OMO-TGF1350-SCC-1152

RF JFET Transistors DC-18.0GHz 0.3mm MESFET
TGF148-1200B

Mfr.#: TGF148-1200B

OMO.#: OMO-TGF148-1200B-1190

신규 및 오리지널
TGF2023-05

Mfr.#: TGF2023-05

OMO.#: OMO-TGF2023-05-1152

RF JFET Transistors 5.0mm GaN Discrete
TGF4240-SCC

Mfr.#: TGF4240-SCC

OMO.#: OMO-TGF4240-SCC-1152

RF JFET Transistors DC-12.0GHz 1.4 Watt HFET
TGF4260-SCC

Mfr.#: TGF4260-SCC

OMO.#: OMO-TGF4260-SCC-1152

RF JFET Transistors DC-10.5GHz 5 Watt HFET
TGF3162

Mfr.#: TGF3162

OMO.#: OMO-TGF3162-1190

ARBITRARY FUNCTION GENERATOR, 2CH/160MHZ
유효성
재고:
Available
주문 시:
2000
수량 입력:
TGF2040의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$8.12
US$8.12
10
US$7.71
US$77.09
100
US$7.30
US$730.35
500
US$6.90
US$3 448.90
1000
US$6.49
US$6 492.00
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