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MSC040SMA120J

MSC040SMA120J
Mfr. #:
MSC040SMA120J
제조사:
Microchip / Microsemi
설명:
MOSFET UNRLS, FG, SIC MOSFET, SOT-227
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
MSC040SMA120J 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
MSC040SMA120J 추가 정보
제품 속성
속성 값
제조사:
마이크로칩
제품 카테고리:
MOSFET
RoHS:
Y
기술:
SiC
장착 스타일:
섀시 마운트
패키지/케이스:
SOT-227-4
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
1.2 kV
Rds On - 드레인 소스 저항:
50 mOhms
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
포장:
튜브
상표:
마이크로칩 / 마이크로세미
상품 유형:
MOSFET
공장 팩 수량:
1
하위 카테고리:
MOSFET
Tags
MSC040S, MSC040, MSC04, MSC0, MSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SiC Schottky Barrier Diodes
Microsemi / Microchip SiC Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon power diodes. SiC (Silicon Carbide) Barrier Diodes are comprised of Silicon (Si) and Carbon (C). Compared to Silicon-only devices, SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity. SiC Schottky Diodes feature zero forward and reverse recovery charge, which reduces diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.
Next Generation SiC MOSFETs
Microsemi / Microchip Next Generation Silicon Carbide (SiC) MOSFETs provide good dynamic and thermal performance compared to the Silicon (Si) power MOSFETs. These MOSFETs come with low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs are capable of stable operation at 175°C high junction temperature. These MOSFETs provide high-efficiency with low switching losses. The SiC MOSFETs does not require any freewheeling diodes and reduces the system cost. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply as well as distribution.
영상 부분 # 설명
MSC040SMA120B

Mfr.#: MSC040SMA120B

OMO.#: OMO-MSC040SMA120B

 MOSFET UNRLS, FG, SIC MOSFET, TO-247
MSC040SMA120J

Mfr.#: MSC040SMA120J

OMO.#: OMO-MSC040SMA120J

 MOSFET UNRLS, FG, SIC MOSFET, SOT-227
MSC040SMA120S

Mfr.#: MSC040SMA120S

OMO.#: OMO-MSC040SMA120S

 MOSFET UNRLS, FG, SIC MOSFET, TO-268
MSC040SMA120S

Mfr.#: MSC040SMA120S

OMO.#: OMO-MSC040SMA120S-1190

 Transistor MOSFET N-CH 1200V 65A 3-Pin D3PAK Tube (Alt: MSC040SMA120S)
MSC04020D2942BE100

Mfr.#: MSC04020D2942BE100

OMO.#: OMO-MSC04020D2942BE100-1190

 신규 및 오리지널
MSC040SMA120B

Mfr.#: MSC040SMA120B

OMO.#: OMO-MSC040SMA120B-1190

 SILICON CARBIDE POWER TRANSISTORS/MODULES
유효성
재고:
Available
주문 시:
4500
수량 입력:
MSC040SMA120J의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$59.47
US$59.47
2
US$58.38
US$116.76
5
US$56.94
US$284.70
10
US$55.98
US$559.80
25
US$55.30
US$1 382.50
50
US$51.99
US$2 599.50
100
US$49.61
US$4 961.00
250
US$44.16
US$11 040.00
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