IRF6709S2TR1PBF

Mfr. #:: IRF6709S2TR1PBF
제조사:: Infineon / IR
설명:: MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRF6709S2TR1PBF 데이터 시트
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지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF6709S2TR1PBF Datasheet IRF6709S2TR1PBF Datasheet (P4-P6)IRF6709S2TR1PBF Datasheet (P7-P9)IRF6709S2TR1PBF Datasheet (P10)
ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: DirectFET-S1

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 25 V

Id - 연속 드레인 전류:: 39 A

Rds On - 드레인 소스 저항:: 13.5 mOhms

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 8.1 nC

Pd - 전력 손실:: 21 W

구성:: 하나의

포장:: 릴

키:: 0.74 mm

길이:: 4.85 mm

트랜지스터 유형:: 1 N-Channel

너비:: 3.95 mm

상표:: 인피니언 / IR

상품 유형:: MOSFET

공장 팩 수량:: 1000

하위 카테고리:: MOSFET

부품 번호 별칭:: SP001523938

단위 무게:: 0.003527 oz

Tags: IRF670, IRF67, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF6709S2TR1PBF 설명

***et: Trans MOSFET N-CH 25V 12A 6-Pin Direct-FET S1 T/R

***ied Electronics & Automation: MOSFET; 25V; 12.000A; DIRECTFET-LV

***i-Key: MOSFET N-CH 25V 12A DIRECTFET-S1

***ernational Rectifier: A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***ark: MOSFET, N-CH, 25V, DIRECTFETS1; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:25V; Cont Current Id:12A; On State Resistance:5.9mohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:1.8V; Case Style:S1; ;RoHS Compliant: Yes

***nell: MOSFET, N-CH, 25V, DIRECTFETS1; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:25V; Cont Current Id:12A; On State Resistance:5.9mohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:1.8V; Case Style:S1; Termination Type:SMD; Alternate Case Style:DirectFET; Max Voltage Vgs th:2.35V; Min Voltage Vgs th:1.35V; Pulse Current Idm:100A; Transistor Case Style:S1

***ment14 APAC: MOSFET, N-CH, 25V, DIRECTFETS1; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:25V; On Resistance Rds(on):5.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:1.8W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DirectFET; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:DirectFET; Current Id Max:12A; Package / Case:S1; Power Dissipation Pd:1.8W; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V; Voltage Vgs th Min:1.35V

Market price

부분 #	제조	설명	재고	가격
IRF6709S2TR1PBF DISTI # IRF6709S2TR1PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 25V 12A DIRECTFET-S1 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF6709S2TR1PBF DISTI # IRF6709S2TR1PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 25V 12A DIRECTFET-S1 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRF6709S2TR1PBF DISTI # IRF6709S2TR1PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 25V 12A DIRECTFET-S1 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRF6709S2TR1PBF DISTI # 70019593	Infineon Technologies AG	MOSFET,25V,12.000A,DIRECTFET-LV RoHS: Compliant	0	1000:$1.0400 2000:$1.0190 5000:$0.9880 10000:$0.9460 25000:$0.8840
IRF6709S2TR1PBF DISTI # 942-IRF6709S2TR1PBF	Infineon Technologies AG	MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC RoHS: Compliant	0
IRF6709S2TR1PBF	International Rectifier		1000
IRF6709S2TR1PBF	International Rectifier	RoHS: Compliant	1000
IRF6709S2TR1PBF DISTI # 1688580	Infineon Technologies AG	MOSFET, N-CH, 25V, DIRECTFETS1 RoHS: Compliant	668	1000:$1.4100 250:$1.5900 100:$1.7800 25:$2.2000 1:$2.6700
IRF6709S2TR1PBF DISTI # 1688580	Infineon Technologies AG	MOSFET, N-CH, 25V, DIRECTFETS1 RoHS: Compliant	668	500:£0.4580 250:£0.4590 100:£0.4600 25:£0.5450 5:£0.5950

관련 상품

영상	부분 #	설명
	Mfr.#: IRF6709S2TRPBF OMO.#: OMO-IRF6709S2TRPBF	MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
	Mfr.#: IRF6709S2TR1PBF OMO.#: OMO-IRF6709S2TR1PBF	MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
	Mfr.#: IRF6709S2TR1PBF OMO.#: OMO-IRF6709S2TR1PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 25V 12A DIRECTFET-S1
	Mfr.#: IRF6709S2TRPBF OMO.#: OMO-IRF6709S2TRPBF-INFINEON-TECHNOLOGIES	MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC

유효성

재고:: Available
주문 시:: 4000
수량 입력:

IRF6709S2TR1PBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

시작

IRF670 6
IRF67 80
IRF6 688
IRF 8615

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IRF6709S2TR1PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes