BSM120D12P2C005

BSM120D12P2C005
Mfr. #:
BSM120D12P2C005
제조사:
Rohm Semiconductor
설명:
MOSFET 2N-CH 1200V 120A MODULE
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
BSM120D12P2C005 데이터 시트
배달:
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지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
BSM120D12P2C005 추가 정보
제품 속성
속성 값
제조사
롬반도체
제품 카테고리
FET - 어레이
시리즈
BSM120D12P2C005
제품
전력 반도체 모듈
유형
SiC 파워 모듈
포장
대부분
장착 스타일
나사
작동 온도 범위
- 40 C to + 150 C
패키지 케이스
기준 치수
작동 온도
-40°C ~ 150°C (TJ)
장착형
*
공급자-장치-패키지
기준 치수
구성
하프 브리지
FET형
2 N-Channel (Half Bridge)
파워맥스
780W
드레인-소스 전압 Vdss
1200V (1.2kV)
입력-커패시턴스-Ciss-Vds
14000pF @ 10V
FET 기능
기준
Current-Continuous-Drain-Id-25°C
120A
Rds-On-Max-Id-Vgs
-
Vgs-th-Max-Id
2.7V @ 22mA
Gate-Charge-Qg-Vgs
-
Tags
BSM1, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Module, N Channel, 120 A, 1.2 kV, 2.7 V RoHS Compliant: Yes
***Components
Dual SiC N-Channel SiC Power Module, 120 A, 1200 V, 4-Pin C ROHM BSM120D12P2C005
***et
Trans SiC MOSFET N-CH 1.2KV 120A 10-Pin Case C Tray
***i-Key
MOSFET 2N-CH 1200V 120A MODULE
***ukat
SiC-N-Ch-Half-Bridge+2xSBD 1200V 134A C-
***ment14 APAC
MODULE, POWER, SIC, 1200V, 120A
***p One Stop Japan
Power Module Automotive 10-Pin Tray
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SiC Power Modules
ROHM Semiconductor SiC power modules are Half Bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These modules support high-frequency operation through reduced switching loss. The optimized design reduces stary inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.
부분 # 제조 설명 재고 가격
BSM120D12P2C005
DISTI # BSM120D12P2C005-ND
ROHM SemiconductorMOSFET 2N-CH 1200V 120A MODULE
RoHS: Compliant
Min Qty: 1
Container: Bulk
On Order
  • 10:$372.1830
  • 1:$391.0600
BSM120D12P2C005
DISTI # BSM120D12P2C005
ROHM SemiconductorTrans SiC MOSFET N-CH 1.2KV 120A 10-Pin Case C Tray - Bulk (Alt: BSM120D12P2C005)
RoHS: Compliant
Min Qty: 12
Container: Bulk
Americas - 0
  • 12:$387.8900
  • 24:$363.6900
  • 48:$342.3900
  • 72:$323.3900
  • 120:$314.6900
BSM120D12P2C005
DISTI # 755-BSM120D12P2C005
ROHM SemiconductorDiscrete Semiconductor Modules Mod: 1200V 120A (w/ Diode)
RoHS: Compliant
0
  • 1:$391.0600
  • 5:$381.6300
BSM120D12P2C005
DISTI # 2345472
ROHM SemiconductorMODULE, POWER, SIC, 1200V, 120A
RoHS: Compliant
0
  • 1:£371.0000
  • 5:£307.0000
영상 부분 # 설명
BSM120D12P2C005

Mfr.#: BSM120D12P2C005

OMO.#: OMO-BSM120D12P2C005

Discrete Semiconductor Modules Mod: 1200V 120A (w/ Diode)
BSM120D12P2C005

Mfr.#: BSM120D12P2C005

OMO.#: OMO-BSM120D12P2C005-ROHM-SEMI

MOSFET 2N-CH 1200V 120A MODULE
유효성
재고:
Available
주문 시:
2500
수량 입력:
BSM120D12P2C005의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$472.04
US$472.04
10
US$448.43
US$4 484.33
100
US$424.83
US$42 483.15
500
US$401.23
US$200 614.90
1000
US$377.63
US$377 628.00
시작
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