IPW90R1K2C3FKSA1

IPW90R1K2C3FKSA1
Mfr. #:
IPW90R1K2C3FKSA1
제조사:
Infineon Technologies
설명:
MOSFET LOW POWER_LEGACY
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPW90R1K2C3FKSA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
기술:
장착 스타일:
구멍을 통해
패키지/케이스:
TO-247-3
상표명:
쿨모스
포장:
튜브
키:
21.1 mm
길이:
16.13 mm
너비:
5.21 mm
상표:
인피니언 테크놀로지스
상품 유형:
MOSFET
하위 카테고리:
MOSFET
부품 번호 별칭:
IPW90R1K2C3FKSA1 SP000413754
단위 무게:
1.340411 oz
Tags
IPW90R1K2C3, IPW90R1K2, IPW90R1K, IPW90R1, IPW90R, IPW9, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 900V 5.1A 3-Pin(3+Tab) TO-247 Tube
***ment14 APAC
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.1A; Package / Case:TO-247; Power Dissipation Pd:83W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting
부분 # 제조 설명 재고 가격
IPW90R1K2C3FKSA1
DISTI # V99:2348_06378617
Infineon Technologies AGTrans MOSFET N-CH 900V 5.1A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
135
  • 100:$1.6960
  • 25:$1.7927
  • 10:$1.9945
  • 1:$2.2273
IPW90R1K2C3FKSA1
DISTI # IPW90R1K2C3FKSA1-ND
Infineon Technologies AGMOSFET N-CH 900V 5.1A TO-247
RoHS: Compliant
Min Qty: 240
Container: Tube
Limited Supply - Call
    IPW90R1K2C3FKSA1
    DISTI # 26197464
    Infineon Technologies AGTrans MOSFET N-CH 900V 5.1A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant
    135
    • 100:$1.6960
    • 25:$1.7927
    • 10:$1.9945
    • 6:$2.2273
    IPW90R1K2C3
    DISTI # 726-IPW90R1K2C3
    Infineon Technologies AGMOSFET N-Ch 900V 5.1A TO247-3 CoolMOS C3
    RoHS: Compliant
    95
    • 1:$2.2700
    • 10:$1.9300
    • 100:$1.5500
    IPW90R1K2C3FKSA1
    DISTI # N/A
    Infineon Technologies AGMOSFET LOW POWER_LEGACY0
      IPW90R1K2C3FKSA1Infineon Technologies AGPower Field-Effect Transistor, 5.1A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
      RoHS: Compliant
      431
      • 1000:$1.1100
      • 500:$1.1600
      • 100:$1.2100
      • 25:$1.2600
      • 1:$1.3600
      IPW90R1K2C3FKSA1
      DISTI # 1107434
      Infineon Technologies AGMOSFET N-CHANNEL 900V 5.1A TO247-3, PK348
      • 6:£1.6380
      • 12:£1.2550
      • 60:£1.1270
      • 120:£1.0000
      • 300:£0.9800
      IPW90R1K2C3FKSA1
      DISTI # IPW90R1K2C3FKSA1
      Infineon Technologies AGTransistor: N-MOSFET,unipolar,900V,3.2A,83W,PG-TO247-384
      • 1:$2.1300
      • 3:$1.8400
      • 10:$1.4800
      • 30:$1.2800
      IPW90R1K2C3FKSA1
      DISTI # 2480722
      Infineon Technologies AGMOSFET, N-CH, 900V, 5.1A, TO-247-3
      RoHS: Compliant
      0
      • 100:$2.4600
      • 10:$3.0600
      • 1:$3.6000
      IPW90R1K2C3FKSA1
      DISTI # C1S322000339406
      Infineon Technologies AGTrans MOSFET N-CH 900V 5.1A 3-Pin(3+Tab) TO-247
      RoHS: Compliant
      84
      • 19:$2.5200
      • 2:$7.6700
      IPW90R1K2C3FKSA1
      DISTI # C1S322000626746
      Infineon Technologies AGMOSFETs
      RoHS: Compliant
      135
      • 100:$1.6960
      • 25:$1.8013
      • 10:$2.0004
      • 1:$2.2373
      영상 부분 # 설명
      IPW90R1K2C3FKSA1

      Mfr.#: IPW90R1K2C3FKSA1

      OMO.#: OMO-IPW90R1K2C3FKSA1

      MOSFET LOW POWER_LEGACY
      IPW90R1K0C3FKSA1

      Mfr.#: IPW90R1K0C3FKSA1

      OMO.#: OMO-IPW90R1K0C3FKSA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 900V 5.7A TO-247
      IPW90R1K2C3FKSA1

      Mfr.#: IPW90R1K2C3FKSA1

      OMO.#: OMO-IPW90R1K2C3FKSA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 900V 5.1A TO-247
      IPW90R1K03

      Mfr.#: IPW90R1K03

      OMO.#: OMO-IPW90R1K03-1190

      신규 및 오리지널
      IPW90R1K0C3,9R1K0C,

      Mfr.#: IPW90R1K0C3,9R1K0C,

      OMO.#: OMO-IPW90R1K0C3-9R1K0C--1190

      신규 및 오리지널
      IPW90R1K2C

      Mfr.#: IPW90R1K2C

      OMO.#: OMO-IPW90R1K2C-1190

      신규 및 오리지널
      IPW90R1K2C3 PB-FREE

      Mfr.#: IPW90R1K2C3 PB-FREE

      OMO.#: OMO-IPW90R1K2C3-PB-FREE-1190

      신규 및 오리지널
      IPW90R1K2C3,9R1K2

      Mfr.#: IPW90R1K2C3,9R1K2

      OMO.#: OMO-IPW90R1K2C3-9R1K2-1190

      신규 및 오리지널
      IPW90R1K2C3S

      Mfr.#: IPW90R1K2C3S

      OMO.#: OMO-IPW90R1K2C3S-1190

      신규 및 오리지널
      IPW90R1K0C3

      Mfr.#: IPW90R1K0C3

      OMO.#: OMO-IPW90R1K0C3-126

      IGBT Transistors MOSFET N-Ch 900V 5.7A TO247-3 CoolMOS C3
      유효성
      재고:
      Available
      주문 시:
      4000
      수량 입력:
      IPW90R1K2C3FKSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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