 | | | |
| PartNumber | IPW90R1K03 | IPW90R1K0C3,9R1K0C, | IPW90R1K0C3 |
| Description | IGBT Transistors MOSFET N-Ch 900V 5.7A TO247-3 CoolMOS C3 | ||
| Manufacturer | - | - | INFINEON |
| Product Category | - | - | IC Chips |
| Series | - | - | CoolMOS C3 |
| Packaging | - | - | Tube |
| Part Aliases | - | - | IPW90R1K0C3FKSA1 IPW90R1K0C3XK SP000413752 |
| Unit Weight | - | - | 1.340411 oz |
| Mounting Style | - | - | Through Hole |
| Tradename | - | - | CoolMOS |
| Package Case | - | - | TO-247-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 89 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 35 ns |
| Rise Time | - | - | 20 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 5.7 A |
| Vds Drain Source Breakdown Voltage | - | - | 900 V |
| Rds On Drain Source Resistance | - | - | 1 Ohms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 400 ns |
| Typical Turn On Delay Time | - | - | 70 ns |
| Channel Mode | - | - | Enhancement |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPW90R1K2C3FKSA1 | MOSFET LOW POWER_LEGACY | |
Infineon Technologies |
IPW90R1K0C3FKSA1 | MOSFET N-CH 900V 5.7A TO-247 | |
| IPW90R1K2C3FKSA1 | MOSFET N-CH 900V 5.1A TO-247 | ||
| IPW90R1K03 | 신규 및 오리지널 | ||
| IPW90R1K0C3,9R1K0C, | 신규 및 오리지널 | ||
| IPW90R1K2C | 신규 및 오리지널 | ||
| IPW90R1K2C3 PB-FREE | 신규 및 오리지널 | ||
| IPW90R1K2C3,9R1K2 | 신규 및 오리지널 | ||
| IPW90R1K2C3,9R1K2C | 신규 및 오리지널 | ||
| IPW90R1K2C3S | 신규 및 오리지널 | ||
| IPW90R1K2C3 | Darlington Transistors MOSFET N-Ch 900V 5.1A TO247-3 CoolMOS C3 | ||
| IPW90R1K0C3 | IGBT Transistors MOSFET N-Ch 900V 5.7A TO247-3 CoolMOS C3 |