RGT50TS65DGC11

RGT50TS65DGC11
Mfr. #:
RGT50TS65DGC11
제조사:
ROHM Semiconductor
설명:
IGBT Transistors 650V 25A IGBT Stop Trench
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
RGT50TS65DGC11 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
RGT50TS65DGC11 추가 정보
제품 속성
속성 값
제조사:
로옴 반도체
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
패키지/케이스:
TO-247-3
장착 스타일:
구멍을 통해
컬렉터-이미터 전압 VCEO 최대:
650 V
수집기-이미터 포화 전압:
1.65 V
최대 게이트 이미터 전압:
30 V
25C에서 연속 수집기 전류:
48 A
Pd - 전력 손실:
174 W
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 175 C
시리즈:
RGT50TS65D
포장:
튜브
연속 수집가 현재 IC 최대:
48 A
작동 온도 범위:
- 40 C to + 175 C
상표:
로옴 반도체
지속적인 수집가 전류:
25 A
게이트-이미터 누설 전류:
+/- 200 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
450
하위 카테고리:
IGBT
부품 번호 별칭:
RGT50TS65D
단위 무게:
1.340411 oz
Tags
RGT50TS, RGT50T, RGT5, RGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Trans IGBT Chip N-CH 650V 48A 174000mW 3-Pin(3+Tab) TO-247N Bulk
***ment14 APAC
IGBT, SINGLE, 650V, 48A, TO-247N-3
***i-Key
IGBT TRNCH FIELD 650V 48A TO247N
***nell
IGBT, SINGLE, 650V, 48A, TO-247N-3; DC Collector Current: 48A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 174W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247N; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***ical
Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247AB
***emi
650V, 30A Field Stop Trench IGBT
*** Electronic Components
IGBT Transistors FS1TIGBT TO247 30A 650V
***rchild Semiconductor
Using novel field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performancefor solar inverter , UPS and digital power generator where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 600V 47A 192000mW 3-Pin(3+Tab) TO-247AC Tube
*** Electronic Components
IGBT Transistors 600V UltraFast IGBT TO-247
***S
French Electronic Distributor since 1988
***i-Key Marketplace
IRGP6630D - IGBT WITH ULTRAFAST
***nell
IGBT, 600V, 47A, TO-247AC-3; DC Collector Current: 47A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 192W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AC; No. of Pins: 3
***ark
IGBT Single Transistor, 53 A, 1.65 V, 200 W, 600 V, TO-247AC, 3
***(Formerly Allied Electronics)
IRGP6640D-EPBF, IGBT Transistor, 53 A 600 V, 3-Pin TO-247 | Infineon IRGP6640D-EPBF
***ical
Trans IGBT Chip N-CH 600V 53A 3-Pin(3+Tab) TO-247AD Tube
***nell
IGBT, 600V, 53A, TO-247AC-3; DC Collector Current: 53A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ark
Igbt Single Transistor, 60 A, 1.55 V, 258 W, 650 V, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT M series, 650 V 30 A low loss
***nell
IGBT, SINGLE, 650V, 60A, TO-247-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pi
***ure Electronics
NGTB Series 650 V 60 A Flange Mount Trench Field Stop IGBT - TO-247
***et
Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube
***emi
IGBT, 650V 30A FS2 Induction Heating
***ark
650V/30A FAST IGBT FSII TO-247 / TUBE ROHS COMPLIANT: YES
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
***i-Key
IGBT TRENCH/FS 650V 60A TO247-3
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
부분 # 제조 설명 재고 가격
RGT50TS65DGC11
DISTI # RGT50TS65DGC11-ND
ROHM SemiconductorIGBT 650V 48A 174W TO-247N
RoHS: Compliant
Min Qty: 1
Container: Tube
434In Stock
  • 2500:$1.6660
  • 1000:$1.7493
  • 500:$2.0742
  • 250:$2.3116
  • 100:$2.5615
  • 25:$2.8112
  • 10:$3.1240
  • 1:$3.5000
RGT50TS65DGC11
DISTI # RGT50TS65DGC11
ROHM SemiconductorTrans IGBT Chip N-CH 650V 48A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGT50TS65DGC11)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 450:$1.7900
  • 900:$1.6900
  • 1800:$1.5900
  • 2700:$1.4900
  • 4500:$1.4900
RGT50TS65DGC11
DISTI # 76Y4986
ROHM SemiconductorIGBT, SINGLE, 650V, 48A, TO-247N-3,DC Collector Current:48A,Collector Emitter Saturation Voltage Vce(on):1.65V,Power Dissipation Pd:174W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247N,No. of Pins:3Pins,RoHS Compliant: Yes52
  • 500:$1.6500
  • 250:$1.7100
  • 100:$2.0300
  • 50:$2.3400
  • 25:$2.5000
  • 10:$2.8600
  • 1:$3.3000
RGT50TS65DGC11
DISTI # 755-RGT50TS65DGC11
ROHM SemiconductorIGBT Transistors 650V 25A IGBT Stop Trench
RoHS: Compliant
412
  • 1:$3.1500
  • 10:$2.6800
  • 100:$2.3300
  • 250:$2.2100
  • 500:$1.9800
  • 1000:$1.6700
  • 2500:$1.5900
  • 5000:$1.5300
RGT50TS65DGC11ROHM Semiconductor*** FREE SHIPPING ORDERS OVER $100 ***24
  • 20:$3.6400
  • 6:$4.0040
  • 1:$5.4600
RGT50TS65DGC11ROHM SemiconductorIGBT Transistors 650V 25A IGBT Stop Trench
RoHS: Compliant
Americas -
    RGT50TS65DGC11
    DISTI # 2519782
    ROHM SemiconductorIGBT, SINGLE, 650V, 48A, TO-247N-3
    RoHS: Compliant
    52
    • 500:£1.3600
    • 250:£1.5200
    • 100:£1.5900
    • 10:£1.8400
    • 1:£2.7000
    RGT50TS65DGC11
    DISTI # 2519782
    ROHM SemiconductorIGBT, SINGLE, 650V, 48A, TO-247N-3
    RoHS: Compliant
    52
    • 250:$3.3300
    • 100:$3.5100
    • 10:$4.0400
    • 1:$4.7500
    RGT50TS65DGC11ROHM SemiconductorRoHS(ship within 1day)30
    • 1:$3.4600
    • 10:$2.8400
    • 50:$2.2900
    • 100:$1.9500
    • 500:$1.8500
    • 1000:$1.8200
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    유효성
    재고:
    412
    주문 시:
    2395
    수량 입력:
    RGT50TS65DGC11의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$3.15
    US$3.15
    10
    US$2.68
    US$26.80
    100
    US$2.33
    US$233.00
    250
    US$2.21
    US$552.50
    500
    US$1.98
    US$990.00
    1000
    US$1.67
    US$1 670.00
    2500
    US$1.59
    US$3 975.00
    5000
    US$1.53
    US$7 650.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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