RGT50T

RGT50TM65DGC9 vs RGT50TS65D vs RGT50TS65DG

 
PartNumberRGT50TM65DGC9RGT50TS65DRGT50TS65DG
DescriptionIGBT Transistors FIELD STOP TRENCH IGBT
ManufacturerROHM Semiconductor--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-263-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max650 V--
Collector Emitter Saturation Voltage1.65 V--
Maximum Gate Emitter Voltage30 V--
Continuous Collector Current at 25 C30 A--
Pd Power Dissipation133 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
PackagingTube--
BrandROHM Semiconductor--
Gate Emitter Leakage Current200 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity50--
SubcategoryIGBTs--
Part # AliasesRGT50TM65D--
제조사 부분 # 설명 RFQ
RGT50TM65DGC9 IGBT Transistors FIELD STOP TRENCH IGBT
RGT50TS65DGC11 IGBT Transistors 650V 25A IGBT Stop Trench
RGT50TS65DGC11 IGBT Transistors 650V 25A Field Stop Trench IGBT
RGT50TS65D 신규 및 오리지널
RGT50TS65DG 신규 및 오리지널
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