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NGTB20N120LWG

NGTB20N120LWG
Mfr. #:
NGTB20N120LWG
제조사:
ON Semiconductor
설명:
IGBT Transistors 1200V/20A IGBT FSI TO-247
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
NGTB20N120LWG 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTB20N120LWG DatasheetNGTB20N120LWG Datasheet (P4-P6)NGTB20N120LWG Datasheet (P7-P9)
ECAD Model:
제품 속성
속성 값
제조사
온세미컨덕터
제품 카테고리
IGBT - 싱글
시리즈
NGTB20N120L
포장
튜브
단위 무게
0.229281 oz
장착 스타일
구멍을 통해
패키지 케이스
TO-247-3
입력 유형
기준
장착형
구멍을 통해
공급자-장치-패키지
TO-247
파워맥스
192W
역복구-시간-trr
-
전류 수집기 Ic-Max
40A
Voltage-Collector-Emitter-Breakdown-Max
1200V
IGBT형
트렌치 필드 스톱
전류 수집기 펄스 Icm
200A
Vce-on-Max-Vge-Ic
2.2V @ 15V, 20A
스위칭 에너지
3.1mJ (on), 700μJ (off)
게이트 차지
200nC
Td-on-off-25°C
86ns/235ns
시험조건
600V, 20A, 10 Ohm, 15V
Pd 전력 손실
77 W
컬렉터-이미터-전압-VCEO-최대
1200 V
컬렉터-이미터-포화-전압
2.2 V
연속 수집기 전류 at-25-C
40 A
게이트 이미 터 누설 전류
100 nA
최대 게이트 이미 터 전압
20 V
Tags
NGTB20N12, NGTB20N1, NGTB20N, NGTB20, NGTB2, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 1200V 40A 192000mW 3-Pin(3+Tab) TO-247 Tube
***el Electronic
ON SEMICONDUCTOR - NGTB20N120LWG - IGBT, 1200V, 20A, FS1, TO-247-3
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-247
***(Formerly Allied Electronics)
IGBT N-Ch 1200V 40A FS 1.8V TO247
***nell
IGBT, 1200V, 20A, FS1, TO-247-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 192W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT
***ical
Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-247AD Tube
***el Electronic
Multilayer Ceramic Capacitors MLCC - Leaded 390pF 100volts C0G LS=5mm +/-5%
*** Electronic Components
IGBT Transistors 1200V IGBT GEN8
***or
IRG8P25N120 - DISCRETE IGBT WITH
***ark
G8, 1200V, 25A, COPAK-247AD, TUBE
***ical
Trans IGBT Chip N=-CH 1200V 30A 110000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
TrenchStop Series 1200 V 30 A Through Hole IGBT Trench Field Stop - PG-TO247-3-1
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 9.3pF 25volts C0G +/-0.25pF
***ment14 APAC
IGBT,1200V,15A,TO247; Transistor Type:IGBT; DC Collector Current:15A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:110W
***ineon SCT
Infineon's 1200 V, 15 A single TRENCHSTOP™ IGBT3 in a TO247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO247-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications
***ical
Trans IGBT Chip N-CH 1200V 30A 229000mW 3-Pin(3+Tab) TO-247 Tube
***-Wing Technology
ON SEMICONDUCTOR - NGTB15N120LWG - IGBT, 1200V, 15A, FS1, TO-247-3
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247
***(Formerly Allied Electronics)
IGBT N-Ch 1200V 30A FS 1.8V TO247
***S
French Electronic Distributor since 1988
***nell
IGBT, 1200V, 15A, FS1, TO-247-3; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 156W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT
***ical
Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-247AC Tube
***ark
Igbt, Single, 1.2Kv, 40A, To-247Ac-3
*** Electronic Components
IGBT Transistors 1200V IGBT GEN8
***or
IGBT WITH ULTRAFAST SOFT RECOVER
***el Electronic
CAP CER 47PF 100V 5% NP0 RADIAL
***nell
IGBT, SINGLE, 1.2KV, 40A, TO-247AC-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 180W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AC; No.
***ical
Trans IGBT Chip N-CH 1350V 40A 350000mW 3-Pin(3+Tab) TO-247 Tube
***emi
IGBT, 1350V 20A FS2-RC Induction Heating
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 1350V V(BR)CES, N-Channel
*** Source Electronics
IGBT with Monolithic Free Wheeling Diode
***i-Key
IGBT TRENCH/FS 1350V 40A TO247
***DA Technology Co., Ltd.
Product Description Demo for Development.
***nell
TRANSISTOR, IGBT, 2.2V, 40A, TO-247-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 394W; Collector Emitter Voltage V(br)ceo: 1.35kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -40°C
***ark
Igbt Single Transistor, 50 A, 1.85 V, 192 W, 1.2 Kv, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 1200V 50A 192000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, 1200V, 25A, TO247; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 192W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT
부분 # 제조 설명 재고 가격
NGTB20N120LWG
DISTI # NGTB20N120LWGOS-ND		ON SemiconductorIGBT 1200V 40A 192W TO247-3
RoHS: Compliant
Min Qty: 150
Container: Tube		Limited Supply - Call
    NGTB20N120LWG
    DISTI # 70341216    		ON SemiconductorIGBT N-Ch 1200V 40A FS 1.8V TO247
    RoHS: Compliant    		0
    • 10:$3.1900
    • 100:$3.0300
    • 250:$2.8800
    • 500:$2.7400
    NGTB20N120LWGON SemiconductorInsulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Compliant    		555
    • 1000:$1.7500
    • 500:$1.8400
    • 100:$1.9200
    • 25:$2.0000
    • 1:$2.1500
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    		 신규 및 오리지널
    유효성
    재고:
    Available
    주문 시:
    5000
    수량 입력:
    NGTB20N120LWG의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$2.62
    US$2.62
    10
    US$2.49
    US$24.94
    100
    US$2.36
    US$236.25
    500
    US$2.23
    US$1 115.65
    1000
    US$2.10
    US$2 100.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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