We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| IPB107N20NAATMA1 DISTI # IPB107N20NAATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 200V 88A TO263-3 Min Qty: 1 Container: Cut Tape (CT) | 2002In Stock |
|
| IPB107N20NAATMA1 DISTI # IPB107N20NAATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 200V 88A TO263-3 Min Qty: 1 Container: Digi-Reel® | 2002In Stock |
|
| IPB107N20NAATMA1 DISTI # IPB107N20NAATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 200V 88A TO263-3 Min Qty: 1000 Container: Tape & Reel (TR) | 2000In Stock |
|
| IPB107N20NAATMA1 DISTI # IPB107N20NAATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB107N20NAATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| IPB107N20NAATMA1 DISTI # SP000877674 | Infineon Technologies AG | Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) TO-263 (Alt: SP000877674) RoHS: Compliant Min Qty: 1000 | Europe - 0 |
|
| IPB107N20NAATMA1 DISTI # 50Y2007 | Infineon Technologies AG | MOSFET Transistor, N Channel, 88 A, 200 V, 0.0096 ohm, 10 V, 3 V RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| IPB107N20NA DISTI # 726-IPB107N20NA | Infineon Technologies AG | MOSFET N-Ch 200V 88A D2PAK-2 RoHS: Compliant | 7276 |
|
| IPB107N20NAXT DISTI # 726-IPB107N20NAATMA1 | Infineon Technologies AG | MOSFET N-Ch 200V 88A D2PAK-2 RoHS: Compliant | 3768 |
|
| IPB107N20NAATMA1 DISTI # 726-IPB107N20NATMA1 | Infineon Technologies AG | MOSFET Mosfet, DCtoDC Nchannel 200V RoHS: Compliant | 0 |
|
| IPB107N20NAATMA1 DISTI # 2480802 | Infineon Technologies AG | MOSFET, N-CH, 200V, 88A, TO-263-3 | 947 |
|
| IPB107N20NAATMA1 DISTI # 2480802RL | Infineon Technologies AG | MOSFET, N-CH, 200V, 88A, TO-263-3 RoHS: Compliant | 0 |
|
| IPB107N20NAATMA1 DISTI # 2480802 | Infineon Technologies AG | MOSFET, N-CH, 200V, 88A, TO-263-3 RoHS: Compliant | 917 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: IPB107N20NA OMO.#: OMO-IPB107N20NA |
MOSFET N-Ch 200V 88A D2PAK-2 |
|
|
Mfr.#: IPB107N20N3 G OMO.#: OMO-IPB107N20N3-G |
MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 |
|
|
Mfr.#: IPB107N20NAATMA1 OMO.#: OMO-IPB107N20NAATMA1 |
MOSFET Mosfet, DCtoDC Nchannel 200V |
|
Mfr.#: IPB107N20N3G OMO.#: OMO-IPB107N20N3G-1190 |
POWER FIELD-EFFECT TRANSISTOR, 88A I(D), 200V, 0.0107OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB |
|
|
Mfr.#: IPB107N20NAXT OMO.#: OMO-IPB107N20NAXT-1190 |
MOSFET N-Ch 200V 88A D2PAK-2 |
|
|
Mfr.#: IPB107N20N3G 107N20N |
신규 및 오리지널 |
|
|
Mfr.#: IPB107N20N3G , 2SD1949K- |
신규 및 오리지널 |
|
|
Mfr.#: IPB107N20N3G 0.2W OMO.#: OMO-IPB107N20N3G-0-2W-1190 |
신규 및 오리지널 |
|
Mfr.#: IPB107N20N3GATMA1 |
MOSFET N-CH 200V 88A TO263-3 |
|
|
Mfr.#: IPB107N20NAATMA1 |
MOSFET N-CH 200V 88A TO263-3 |