SCT2H12NYTB

Mfr. #:: SCT2H12NYTB
제조사:: Rohm Semiconductor
설명:: 1700V 1.2 OHM 4A SIC FET
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SCT2H12NYTB 데이터 시트
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추가 정보:: SCT2H12NYTB 추가 정보

제품 속성
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Tags: SCT2H, SCT2, SCT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SCT2H12NYTB 설명

***Components: In a Pack of 2, SiC N-Channel MOSFET, 4 A, 1700 V, 2 + Tab-Pin TO-268 ROHM SCT2H12NYTB

***ure Electronics: N-Channel 1700 V 1.5 Ohm Surface Mount SiC Power Mosfet - TO-268-2

***ical: Trans MOSFET N-CH SiC 1.7KV 4A 3-Pin(2+Tab) TO-268L T/R

***et: Trans MOSFET N-CH 1700V 4A 3-Pin TO-268 Emboss T/R

***ronik: SiC-N 1700V 4A 1150mOhm TO268

***i-Key: 1700V 1.2 OHM 4A SIC FET

***: N-CH SIC PWR MOSF 1.7KV

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:1.7Kv; On Resistance Rds(On):1.15Ohm; Rds(On) Test Voltage Vgs:18V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:44W; No. Of Pins:2Pins Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 1.7KV, 4A, TO-268; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:1.7kV; On Resistance Rds(on):1.15ohm; Rds(on) Test Voltage Vgs:18V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:44W; Transistor Case Style:TO-268; No. of Pins:2Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

***nell: MOSFET, CA-N, 1,7KV, 4A, TO-268; Polarità Transistor:Canale N; Corrente Continua di Drain Id:4A; Tensione Drain Source Vds:1.7kV; Resistenza di Attivazione Rds(on):1.15ohm; Tensione Vgs di Misura Rds(on):18V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:44W; Modello Case Transistor:TO-268; No. di Pin:2Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)

SCT2H12NYTB 추가 정보

Silicon Carbide (SiC) Power Devices: ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.

N-Channel SiC Power MOSFETs: ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.

Industrial Product Solutions: ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discretes to ICs and modules, providing total solutions at the system level. The Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over 10 years) creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.

Electronic Vehicle (EV) Solutions: ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to contribute to efficiency and improved performance in of state-of-the-art Electronic Vehicles (EV). ROHM offers products optimized for a variety of solutions, with focus on Dedicated EV Blocks, such as the Main Inverter, DC-DC Converter, On-board Charger, and Electric Compressor.

Market price

부분 #	제조	설명	재고	가격
SCT2H12NYTB DISTI # SCT2H12NYTBCT-ND	ROHM Semiconductor	1700V 1.2 OHM 4A SIC FET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2293In Stock	100:$3.9969 25:$4.6120 10:$4.8780 1:$5.4300
SCT2H12NYTB DISTI # SCT2H12NYTBDKR-ND	ROHM Semiconductor	1700V 1.2 OHM 4A SIC FET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2293In Stock	100:$3.9969 25:$4.6120 10:$4.8780 1:$5.4300
SCT2H12NYTB DISTI # SCT2H12NYTBTR-ND	ROHM Semiconductor	1700V 1.2 OHM 4A SIC FET RoHS: Compliant Min Qty: 400 Container: Tape & Reel (TR)	2000In Stock	2000:$2.6467 1200:$2.7860 800:$3.3034 400:$3.6815
SCT2H12NYTB DISTI # SCT2H12NYTB	ROHM Semiconductor	Trans MOSFET N-CH 1700V 4A 3-Pin TO-268 Emboss T/R - Tape and Reel (Alt: SCT2H12NYTB) RoHS: Compliant Min Qty: 400 Container: Reel	Americas - 0	4000:$2.4900 2400:$2.5900 1600:$2.6900 800:$2.8900 400:$3.0900
SCT2H12NYTB DISTI # SCT2H12NYTB	ROHM Semiconductor	Trans MOSFET N-CH 1700V 4A 3-Pin TO-268 Emboss T/R (Alt: SCT2H12NYTB) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1000:€3.2900 500:€3.5900 100:€3.6900 50:€3.8900 25:€3.9900 10:€4.1900 1:€4.5900
SCT2H12NYTB DISTI # 18AC7649	ROHM Semiconductor	MOSFET, N-CH, 1.7KV, 4A, TO-268,Transistor Polarity:N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:1.7kV,On Resistance Rds(on):1.15ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes	108	250:$3.7700 100:$3.9700 50:$4.1800 25:$4.4400 10:$4.6300 1:$5.3100
SCT2H12NYTB. DISTI # 30AC0012	ROHM Semiconductor	Transistor Polarity:N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:1.7kV,On Resistance Rds(on):1.15ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:2.8V,Power Dissipation Pd:44W,No. of Pins:2Pins RoHS Compliant: Yes	800	4000:$2.4900 2400:$2.5900 1600:$2.6900 800:$2.8900 1:$3.0900
SCT2H12NYTB DISTI # 755-SCT2H12NYTB	ROHM Semiconductor	MOSFET N-Ch 1700V 4A 44W SiC Silicon Carbide RoHS: Compliant	2478	1:$5.2600 10:$4.4700 100:$3.8800 250:$3.6800 400:$3.3000 800:$2.7800 2400:$2.6400
SCT2H12NYTB DISTI # 1501510	ROHM Semiconductor	MOSFET N-CH 1700V 4A SIC TO-268-2L, PK	2	100:£3.3600 24:£3.5850 12:£3.7550 6:£4.0350 2:£4.7050
SCT2H12NYTB	ROHM Semiconductor	POWER FIELD-EFFECT TRANSISTOR	12	13:$5.5200 5:$6.0720 1:$8.2800
SCT2H12NYTB DISTI # TMOSP12912	ROHM Semiconductor	SiC-N 1700V 4A 1150mOhm TO268 RoHS: Compliant	Stock DE - 1200Stock HK - 0Stock US - 0	400:$5.6900 800:$5.0400
SCT2H12NYTB	ROHM Semiconductor	RoHS(ship within 1day)	16	1:$5.4400 10:$4.0800 50:$3.6000 100:$3.0700 500:$2.8600 1000:$2.7600
SCT2H12NYTB	ROHM Semiconductor	MOSFET N-Ch 1700V 4A 44W SiC Silicon Carbide RoHS: Compliant	Americas - 1600
SCT2H12NYTB DISTI # 2762593	ROHM Semiconductor	MOSFET, N-CH, 1.7KV, 4A, TO-268	126	100:£3.2200 50:£3.3100 10:£3.4100 5:£4.0100 1:£4.4500
SCT2H12NYTB DISTI # 2762593	ROHM Semiconductor	MOSFET, N-CH, 1.7KV, 4A, TO-268 RoHS: Compliant	103	25:$6.9600 10:$7.3600 1:$8.1800

영상	부분 #	설명
	Mfr.#: SCT2H12NYTB OMO.#: OMO-SCT2H12NYTB	MOSFET N-Ch 1700V 4A 44W SiC Silicon Carbide
	Mfr.#: SCT2H12NZGC11 OMO.#: OMO-SCT2H12NZGC11	MOSFET 1700V 3.7A N-MOSFET Silicon Carbide SiC
	Mfr.#: SCT2H12NY OMO.#: OMO-SCT2H12NY-1190	신규 및 오리지널
	Mfr.#: SCT2H12NYTB OMO.#: OMO-SCT2H12NYTB-ROHM-SEMI	1700V 1.2 OHM 4A SIC FET
	Mfr.#: SCT2H12NZGC11 OMO.#: OMO-SCT2H12NZGC11-ROHM-SEMI	MOSFET N-CH 1700V 3.7A

SCT2H12NYTB

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes