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SPD07N20GBTMA1

SPD07N20GBTMA1
Mfr. #:
SPD07N20GBTMA1
제조사:
Infineon Technologies
설명:
MOSFET N-Ch 200V 7A DPAK-2
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SPD07N20GBTMA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
TO-252-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
200 V
Id - 연속 드레인 전류:
7 A
Rds On - 드레인 소스 저항:
300 mOhms
Vgs th - 게이트 소스 임계 전압:
2.1 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
31.5 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
Pd - 전력 손실:
40 W
구성:
하나의
채널 모드:
상승
상표명:
SIPMOS
포장:
릴
키:
2.3 mm
길이:
6.5 mm
트랜지스터 유형:
1 N-Channel
너비:
6.22 mm
상표:
인피니언 테크놀로지스
순방향 트랜스컨덕턴스 - 최소:
3 S
가을 시간:
30 ns
상품 유형:
MOSFET
상승 시간:
40 ns
공장 팩 수량:
2500
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
55 ns
일반적인 켜기 지연 시간:
10 ns
부품 번호 별칭:
G SP000449008 SPD07N20 SPD07N20GXT
단위 무게:
0.139332 oz
Tags
SPD07N20G, SPD07N2, SPD07N, SPD07, SPD0, SPD
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 200V 7A 3-Pin(2+Tab) DPAK T/R
***ineon
Infineon's 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS compliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS); LED lighting power supply
***nell
MOSFET, N-CH, 200V, 7A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 40W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***icroelectronics
N-channel 200 V, 0.35 Ohm typ., 7 A Power MOSFET in DPAK package
***ure Electronics
N-Channel 200 V 0.4 Ohm 45 W Surface Mount MESH Overlay Power Mosfet - TO-252
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N CH, 200V, 7A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:45W; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***ter Electronics
N-CH/LL/100V/8.4A/0.2OHM@VGS=5V/Substitute of IRLR120TM
***Yang
MOSFET 100V N-Channel a-FET Logic Level - Bulk
***nell
MOSFET, 100V, 8.4A; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.4A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.22ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 35W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 100V; Voltage Vgs Rds on Measurement: 5V
***ure Electronics
Single P-Channel 60 V 155 mOhm Surface Mount TrenchFET Power Mosfet - TO-252
***ment14 APAC
MOSFET, P-CH, 20V, -8.2A, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.2A; Source Voltage Vds:-60V; On Resistance
***ark
MOSFET, P-CH, 60V, 8.2A, 150DEG C, 20.8W; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:8.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
***nell
MOSFET, P-CH, 20V, -8.2A, TO-252; Transistor Polarity: P Channel; Continuous Drain Current Id: -8.2A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.125ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2V; Power Dissipation Pd: 20.8W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
***-Wing Technology
Tape & Reel (TR) Surface Mount P-Channel Single Mosfet Transistor 7.8A Tc 7.8A 2.5W 20ns
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, P, 60V, 7.8A; Transistor Polarity: P Channel; Continuous Drain Current Id: -7.8A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.28ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 32W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: -60V; Voltage Vgs Rds on Measurement: -10V
***emi
N-Channel PowerTrench® MOSFET 200V 3.6A, 130mΩ
***r Electronics
Power Field-Effect Transistor, 3.6A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ment14 APAC
MOSFET, N, SMD, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):130mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:70mW; Transistor Case Style:TO-252; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Id Max:3.6A; Package / Case:DPAK; Power Dissipation Pd:70mW; Pulse Current Idm:20A; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
***ure Electronics
N-Channel 500 V 600 mOhm 32 nC CoolMOS™ Power Mosfet - PG-TO252-3-1
*** Source Electronics
Trans MOSFET N-CH 500V 7.6A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 500V 7.6A DPAK
***ment14 APAC
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:560V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:7.6A; Package / Case:TO-252; Power Dissipation Pd:83W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:560V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
부분 # 제조 설명 재고 가격
SPD07N20GBTMA1
DISTI # SPD07N20GBTMA1TR-ND		Infineon Technologies AGMOSFET N-CH 200V 7A TO252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    SPD07N20GBTMA1
    DISTI # SPD07N20GBTMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 200V 7A TO252
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SPD07N20GBTMA1
      DISTI # SPD07N20GBTMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 200V 7A TO252
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SPD07N20GBTMA1
        DISTI # 726-SPD07N20GBTMA1        		Infineon Technologies AGMOSFET N-Ch 200V 7A DPAK-2
        RoHS: Compliant        		0
          SPD07N20 G
          DISTI # 726-SPD07N20G          		Infineon Technologies AGMOSFET N-Ch 200V 7A DPAK-2
          RoHS: Compliant          		0
            영상 부분 # 설명
            SPD07N20GBTMA1

            Mfr.#: SPD07N20GBTMA1

            OMO.#: OMO-SPD07N20GBTMA1

            		 MOSFET N-Ch 200V 7A DPAK-2
            SPD07N20

            Mfr.#: SPD07N20

            OMO.#: OMO-SPD07N20

            		 MOSFET N-Ch 200V 7A DPAK-2
            SPD07N20

            Mfr.#: SPD07N20

            OMO.#: OMO-SPD07N20-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 200V 7A TO-252
            SPD07N20 G

            Mfr.#: SPD07N20 G

            OMO.#: OMO-SPD07N20-G-1190

            		 MOSFET N-Ch 200V 7A DPAK-2
            SPD07N20G

            Mfr.#: SPD07N20G

            OMO.#: OMO-SPD07N20G-1190

            		 신규 및 오리지널
            SPD07N20GBTMA1

            Mfr.#: SPD07N20GBTMA1

            OMO.#: OMO-SPD07N20GBTMA1-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 200V 7A TO252
            유효성
            재고:
            Available
            주문 시:
            5500
            수량 입력:
            SPD07N20GBTMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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