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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| IPW60R099C6FKSA1 DISTI # V99:2348_06377641 | Infineon Technologies AG | Trans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant | 212 |
|
| IPW60R099C6FKSA1 DISTI # V36:1790_06377641 | Infineon Technologies AG | Trans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant | 0 |
|
| IPW60R099C6FKSA1 DISTI # IPW60R099C6FKSA1-ND | Infineon Technologies AG | MOSFET N-CH 600V 37.9A TO247 RoHS: Compliant Min Qty: 1 Container: Tube | 953In Stock |
|
| IPW60R099C6FKSA1 DISTI # 33728972 | Infineon Technologies AG | Trans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant | 428 |
|
| IPW60R099C6FKSA1 DISTI # 32436007 | Infineon Technologies AG | Trans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant | 212 |
|
| IPW60R099C6XK DISTI # IPW60R099C6FKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IPW60R099C6FKSA1) RoHS: Compliant Min Qty: 240 Container: Tube | Americas - 0 |
|
| IPW60R099C6FKSA1. DISTI # 32AC0684 | Infineon Technologies AG | Transistor Polarity:N Channel,Continuous Drain Current Id:38A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.09ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:278W,No. of Pins:3Pins | 0 |
|
| IPW60R099C6 DISTI # 726-IPW60R099C6 | Infineon Technologies AG | MOSFET N-Ch 650V 38A TO247-3 CoolMOS C6 RoHS: Compliant | 1240 |
|
| IPW60R099C6FKSA1 DISTI # 726-IPW60R099C6FKSA1 | Infineon Technologies AG | MOSFET N-Ch 650V 38A TO247-3 CoolMOS C6 RoHS: Compliant | 240 |
|
| IPW60R099C6FKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247 RoHS: Compliant | 1 |
|
| IPW60R099C6FKSA1 DISTI # 8977406P | Infineon Technologies AG | MOSFET N-CH 600V 37.9A COOLMOS TO247, TU | 88 |
|
| IPW60R099C6FKSA1 DISTI # 8977406 | Infineon Technologies AG | MOSFET N-CH 600V 37.9A COOLMOS TO247, PK | 76 |
|
| IPW60R099C6FKSA1 DISTI # IPW60R099C6FKSA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,600V,37.9A,278W,PG-TO247-3 | 138 |
|
| IPW60R099C6FKSA1 DISTI # IPW60R099C6 | Infineon Technologies AG | N-Ch 600V 37,9A 278W 0,099R TO247 RoHS: Compliant | 220 |
|
| IPW60R099C6FKSA1 DISTI # 1860838 | Infineon Technologies AG | MOSFET,N CH,600V,37.9A,TO247 | 71 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: IPW60R090CFD7XKSA1 OMO.#: OMO-IPW60R090CFD7XKSA1 |
MOSFET HIGH POWER_NEW |
|
Mfr.#: IPW60R099CPA OMO.#: OMO-IPW60R099CPA |
MOSFET AUTOMOTIVE |
|
|
Mfr.#: IPW60R099CP OMO.#: OMO-IPW60R099CP |
MOSFET N-Ch 600V 31A TO247-3 CoolMOS CP |
|
Mfr.#: IPW60R099P7XKSA1 |
MOSFET N-CH 600V 31A TO247-3 |
|
Mfr.#: IPW60R099C7 OMO.#: OMO-IPW60R099C7-1190 |
- Bulk (Alt: IPW60R099C7) |
|
|
Mfr.#: IPW60R099CP OMO.#: OMO-IPW60R099CP-1190 |
Trans MOSFET N-CH 600V 31A 3-Pin TO-247 Tube (Alt: IPW60R099CP) |
|
|
Mfr.#: IPW60R099CP (6R099) OMO.#: OMO-IPW60R099CP-6R099--1190 |
신규 및 오리지널 |
|
|
Mfr.#: IPW60R099CP/SL36N65CT |
신규 및 오리지널 |
|
|
Mfr.#: IPW60R099CPXK OMO.#: OMO-IPW60R099CPXK-1190 |
신규 및 오리지널 |
|
Mfr.#: IPW60R099P6XKSA1 |
MOSFET HIGH POWER PRICE/PERFORM |
