We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| HGT1S12N60A4DS DISTI # V36:1790_06359902 | ON Semiconductor | Trans IGBT Chip N-CH 600V 54A 167000mW 3-Pin(2+Tab) D2PAK Rail | 0 |
|
| HGT1S12N60A4DS DISTI # HGT1S12N60A4DS-ND | ON Semiconductor | IGBT 600V 54A 167W D2PAK Min Qty: 800 Container: Tube | Limited Supply - Call |
|
| HGT1S12N60A4DS DISTI # 34795688 | ON Semiconductor | Trans IGBT Chip N-CH 600V 54A 167000mW 3-Pin(2+Tab) D2PAK Rail | 8000 |
|
| HGT1S12N60A4DS DISTI # HGT1S12N60A4DS | ON Semiconductor | Trans IGBT Chip N-CH 600V 54A 3-Pin(2+Tab) TO-263AB Rail - Bulk (Alt: HGT1S12N60A4DS) RoHS: Compliant Min Qty: 92 Container: Bulk | Americas - 0 | |
| HGT1S12N60A4DS DISTI # HGT1S12N60A4DS | ON Semiconductor | Trans IGBT Chip N-CH 600V 54A 3-Pin(2+Tab) TO-263AB Rail - Rail/Tube (Alt: HGT1S12N60A4DS) RoHS: Compliant Min Qty: 800 Container: Tube | Americas - 0 |
|
| HGT1S12N60A4DS DISTI # 95B2571 | ON Semiconductor | SINGLE IGBT, 600V, 54A,DC Collector Current:54A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:167W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| HGT1S12N60A4DS | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Compliant | 2395 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: HGT1S12N60A4S9A OMO.#: OMO-HGT1S12N60A4S9A |
IGBT Transistors 600V N-Channel IGBT SMPS Series |
|
Mfr.#: HGT1S12N60A4 OMO.#: OMO-HGT1S12N60A4-1190 |
신규 및 오리지널 |
|
|
Mfr.#: HGT1S12N60A4D OMO.#: OMO-HGT1S12N60A4D-1190 |
신규 및 오리지널 |
|
Mfr.#: HGT1S12N60A4DS |
IGBT 600V 54A 167W D2PAK |
|
|
Mfr.#: HGT1S12N60A4DS9A OMO.#: OMO-HGT1S12N60A4DS9A-1190 |
신규 및 오리지널 |
|
|
Mfr.#: HGT1S12N60B3DS OMO.#: OMO-HGT1S12N60B3DS-1190 |
Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB |
|
|
Mfr.#: HGT1S12N60B3G OMO.#: OMO-HGT1S12N60B3G-1190 |
신규 및 오리지널 |
|
|
Mfr.#: HGT1S12N60C3DS OMO.#: OMO-HGT1S12N60C3DS-37 |
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes - Bulk (Alt: HGT1S12N60C3DS) |
|
|
Mfr.#: HGT1S12N60C3DS9A OMO.#: OMO-HGT1S12N60C3DS9A-1190 |
신규 및 오리지널 |
|
|
Mfr.#: HGT1S12N60C3S9AR4501 |
신규 및 오리지널 |