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IRF8915PBF

IRF8915PBF
Mfr. #:
IRF8915PBF
제조사:
Rochester Electronics, LLC
설명:
IGBT Transistors MOSFET 20V DUAL N-CH HEXFET 18.3mOhms 4.9nC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRF8915PBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사
국제 정류기
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
포장
튜브
단위 무게
0.019048 oz
장착 스타일
SMD/SMT
패키지 케이스
SOIC-8
기술
시
채널 수
2 Channel
구성
듀얼 듀얼 드레인
트랜지스터형
2 N-Channel
Pd 전력 손실
2 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
가을철
3.6 ns
상승 시간
12 ns
Vgs 게이트 소스 전압
20 V
Id-연속-드레인-전류
8.9 A
Vds-드레인-소스-고장-전압
20 V
Vgs-th-Gate-Source-Threshold-Voltage
1.7 V to 2.5 V
Rds-On-Drain-Source-Resistance
27 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
7.1 ns
일반 켜기 지연 시간
6 ns
Qg-Gate-Charge
4.9 nC
순방향 트랜스컨덕턴스-최소
12 S
채널 모드
상승
Tags
IRF8915, IRF891, IRF89, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET Array Dual N-CH 20V 8.9A 8-Pin SOIC Tube
***ernational Rectifier
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:8.9A; On Resistance, Rds(on):18.3mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***ure Electronics
Dual N-Channel 20 V 18.3/11.3 mOhm 11/23 nC HEXFET® Power Mosfet - SOIC-8
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 12A I(D), 20V, 0.0093ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current; Dual N-Channel MOSFET
***ment14 APAC
N CHANNEL MOSFET, 20V, 10A; Transistor P; N CHANNEL MOSFET, 20V, 10A; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:20V; On Resistance Rds(on):18.3mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:2.55V; No. of Pins:8
***(Formerly Allied Electronics)
IRF7401PBF N-channel MOSFET Transistor; 8.7 A; 20 V; 8-Pin SOIC
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Single N-Channel 20 V 0.022 Ohm 48 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R / MOSFET N-CH 20V 8.7A 8-SOIC
***nell
N CHANNEL MOSFET, 20V, 8.7A, SOIC; Trans; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.7A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.022ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vg
***roFlash
Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 8.7 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 22 / Gate-Source Voltage V = 12 / Fall Time ns = 92 / Rise Time ns = 72 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
***ure Electronics
Dual N-Channel 20 V 30 mOhm 13 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
MOSFET 2N-CH 20V 7A 8-SOIC / Trans MOSFET N-CH Si 20V 7A 8-Pin SOIC T/R
***ineon
Benefits: RoHS Compliant; Low RDS(on); Dual N-Channel MOSFET
***ark
Mosfet, Dual N-Ch, 20V, 7A, Soic; Transistor Polarity:dual N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:20V; On Resistance Rds(On):0.03Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.2V; Power Rohs Compliant: Yes
***et Japan
Transistor MOSFET Array Dual N-CH 20V 7.63A 8-Pin SOIC T/R
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Dual N-Channel 20 V 28/41 mO 15.6 nC SMT Enhancement Mode Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 20V 7.63A Automotive 8-Pin SO T/R
***(Formerly Allied Electronics)
Dual N-Channel Enhancement MOSFET SOIC8
***des Inc SCT
N-Channel Mosfet, 20V VDS, 12±V VGS
***peria
PSMN010-25YLC - N-channel 25 V 10.6 mΩ logic level MOSFET in LFPAK using NextPower technology
***et
Transistor MOSFET N-Channel 25V 39A 4-Pin LFPAK
*** Electronics
MOSFET N-CH 25 V 10.6 MOHMS LOGIC LEVEL MOSFET
***el Electronic
Interface - Drivers, Receivers, Transceivers 2 (1 Year) 8-SOIC (0.154, 3.90mm Width) Tape & Reel (TR) Transceiver Surface Mount 4.75V~5.25V 2/1 1Mbps CAN TRANSCEIVER
***peria
PSMN012-25YLC - N-channel 25 V 12.6 mΩ logic level MOSFET in LFPAK using NextPower technology
***et
Trans MOSFET N-CH 25V 33A 5-Pin(4+Tab) LFPAK T/R
*** Electronics
MOSFET N-CH 25 V 12.6 MOHMS LOGIC LEVEL MOSFET
부분 # 제조 설명 재고 가격
IRF8915TRPBF
DISTI # IRF8915PBFCT-ND		Infineon Technologies AGMOSFET 2N-CH 20V 8.9A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		7769In Stock
  • 1000:$0.3740
  • 500:$0.4675
  • 100:$0.6311
  • 10:$0.8180
  • 1:$0.9300
IRF8915TRPBF
DISTI # IRF8915PBFDKR-ND		Infineon Technologies AGMOSFET 2N-CH 20V 8.9A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		7769In Stock
  • 1000:$0.3740
  • 500:$0.4675
  • 100:$0.6311
  • 10:$0.8180
  • 1:$0.9300
IRF8915TRPBF
DISTI # IRF8915PBFTR-ND		Infineon Technologies AGMOSFET 2N-CH 20V 8.9A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		4000In Stock
  • 4000:$0.3291
IRF8915PBF
DISTI # 70018279		Infineon Technologies AGIRF8915PBF Dual N-channel MOSFET Transistor,8.9 A,20 V,8-Pin SOIC
RoHS: Compliant		0
  • 3800:$1.0900
  • 7600:$1.0680
  • 19000:$1.0360
  • 38000:$0.9920
  • 95000:$0.9270
IRF8915PBF
DISTI # 942-IRF8915PBF		Infineon Technologies AGMOSFET 20V DUAL N-CH HEXFET 18.3mOhms 4.9nC
RoHS: Compliant		2570
  • 1:$1.0900
  • 10:$0.4830
  • 100:$0.3700
  • 1000:$0.3490
  • 2500:$0.3130
  • 10000:$0.3010
  • 25000:$0.2870
IRF8915PBFInternational Rectifier 
RoHS: Not Compliant		355
  • 1000:$0.2900
  • 500:$0.3100
  • 100:$0.3200
  • 25:$0.3400
  • 1:$0.3600
영상 부분 # 설명
IRF8910TRPBF

Mfr.#: IRF8910TRPBF

OMO.#: OMO-IRF8910TRPBF

 MOSFET MOSFT DUAL NCh 20V 10A
IRF8910TRPBF

Mfr.#: IRF8910TRPBF

OMO.#: OMO-IRF8910TRPBF-INFINEON-TECHNOLOGIES

 MOSFET 2N-CH 20V 10A 8-SOIC
IRF8915TRPBF-CUT TAPE

Mfr.#: IRF8915TRPBF-CUT TAPE

OMO.#: OMO-IRF8915TRPBF-CUT-TAPE-1190

 신규 및 오리지널
IRF8915UTRPBF

Mfr.#: IRF8915UTRPBF

OMO.#: OMO-IRF8915UTRPBF-1190

 신규 및 오리지널
IRF8910

Mfr.#: IRF8910

OMO.#: OMO-IRF8910-1190

 INSTOCK
IRF8910PBF-1

Mfr.#: IRF8910PBF-1

OMO.#: OMO-IRF8910PBF-1-1190

 신규 및 오리지널
IRF8910TR

Mfr.#: IRF8910TR

OMO.#: OMO-IRF8910TR-1190

 신규 및 오리지널
IRF8910TRPBF.

Mfr.#: IRF8910TRPBF.

OMO.#: OMO-IRF8910TRPBF--1190

 TRENCH_MOSFETS , ROHS COMPLIANT: YES
IRF8915PBFCT-ND

Mfr.#: IRF8915PBFCT-ND

OMO.#: OMO-IRF8915PBFCT-ND-1190

 신규 및 오리지널
IRF8915TRPBF

Mfr.#: IRF8915TRPBF

OMO.#: OMO-IRF8915TRPBF-INFINEON-TECHNOLOGIES

 MOSFET 2N-CH 20V 8.9A 8-SOIC
유효성
재고:
Available
주문 시:
4500
수량 입력:
IRF8915PBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$0.43
US$0.43
10
US$0.41
US$4.09
100
US$0.39
US$38.75
500
US$0.37
US$182.95
1000
US$0.34
US$344.40
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