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| PartNumber | IRF8915 | IRF8915PBFCT-ND | IRF8915PBF |
| Description | MOSFET 2N-CH 20V 8.9A 8-SOIC | IGBT Transistors MOSFET 20V DUAL N-CH HEXFET 18.3mOhms 4.9nC | |
| Manufacturer | Infineon Technologies | IR | International Rectifier |
| Product Category | FETs - Arrays | FETs - Arrays | Transistors - FETs, MOSFETs - Single |
| Series | HEXFETR | - | - |
| Packaging | Tube | - | Tube |
| Package Case | 8-SOIC (0.154", 3.90mm Width) | - | SOIC-8 |
| Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
| Mounting Type | Surface Mount | - | - |
| Supplier Device Package | 8-SO | - | - |
| FET Type | 2 N-Channel (Dual) | - | - |
| Power Max | 2W | - | - |
| Drain to Source Voltage Vdss | 20V | - | - |
| Input Capacitance Ciss Vds | 540pF @ 10V | - | - |
| FET Feature | Logic Level Gate | - | - |
| Current Continuous Drain Id 25°C | 8.9A | - | - |
| Rds On Max Id Vgs | 18.3 mOhm @ 8.9A, 10V | - | - |
| Vgs th Max Id | 2.5V @ 250μA | - | - |
| Gate Charge Qg Vgs | 7.4nC @ 4.5V | - | - |
| Unit Weight | - | - | 0.019048 oz |
| Mounting Style | - | - | SMD/SMT |
| Technology | - | - | Si |
| Number of Channels | - | - | 2 Channel |
| Configuration | - | - | Dual Dual Drain |
| Transistor Type | - | - | 2 N-Channel |
| Pd Power Dissipation | - | - | 2 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 3.6 ns |
| Rise Time | - | - | 12 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 8.9 A |
| Vds Drain Source Breakdown Voltage | - | - | 20 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1.7 V to 2.5 V |
| Rds On Drain Source Resistance | - | - | 27 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 7.1 ns |
| Typical Turn On Delay Time | - | - | 6 ns |
| Qg Gate Charge | - | - | 4.9 nC |
| Forward Transconductance Min | - | - | 12 S |
| Channel Mode | - | - | Enhancement |