NGTB30N120IHSWG

Mfr. #:: NGTB30N120IHSWG
제조사:: ON Semiconductor
설명:: IGBT Transistors 1200/30A IGBT LPT TO-247
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: NGTB30N120IHSWG 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사: 온세미컨덕터

제품 카테고리: IGBT - 싱글

시리즈: NGTB30N120IHS

포장: 튜브

단위 무게: 0.229281 oz

장착 스타일: 구멍을 통해

패키지 케이스: TO-247-3

입력 유형: 기준

장착형: 표면 실장

공급자-장치-패키지: TO-247

구성: 하나의

파워맥스: 192W

역복구-시간-trr: -

전류 수집기 Ic-Max: 60A

Voltage-Collector-Emitter-Breakdown-Max: 1200V

IGBT형: 트렌치 필드 스톱

전류 수집기 펄스 Icm: 200A

Vce-on-Max-Vge-Ic: 2.4V @ 15V, 30A

스위칭 에너지: 1mJ (off)

게이트 차지: 220nC

Td-on-off-25°C: -/210ns

시험조건: 600V, 30A, 10 Ohm, 15V

Pd 전력 손실: 192 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

컬렉터-이미터-전압-VCEO-최대: 1200 V

컬렉터-이미터-포화-전압: 2 V

연속 수집기 전류 at-25-C: 60 A

게이트 이미 터 누설 전류: 100 nA

최대 게이트 이미 터 전압: 20 V

Tags: NGTB30N120I, NGTB30N12, NGTB30N1, NGTB30, NGTB3, NGTB, NGT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NGTB30N120IHSWG 설명

***ical: Trans IGBT Chip N-CH 1200V 60A 192000mW 3-Pin(3+Tab) TO-247 Tube

***ark: IGBT Single Transistor, 60 A, 2 V, 192 W, 1.2 kV, TO-247, 3

***p One Stop Global: Trans IGBT Chip N-CH 1.2KV 60A 3-Pin(3+Tab) TO-247 Rail

***Semiconductor: IGBT 1200V 30A FS1 Induction Heating

***ied Electronics & Automation: IGBT; 1200V; 30A; induction heating; TO247

***Components: IGBT 1200V 30A induction heating TO247

***ment14 APAC: IGBT, 1200V, 30A, TO-247-3

***i-Key: IGBT 1200V 30A TO247

***nell: IGBT, 1200V, 30A, TO-247-3; Corrente di Collettore CC:60A; Tensione Saturaz Collettore-Emettitore Vce(on):2V; Dissipazione di Potenza Pd:192W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018); Temperatura di Esercizio Min:-55°C; Tipo di Transistor:IGBT

Market price

부분 #	제조	설명	재고	가격
NGTB30N120IHSWG DISTI # NGTB30N120IHSWGOS-ND	ON Semiconductor	IGBT 1200V 30A TO247 RoHS: Compliant Min Qty: 120 Container: Tube	Limited Supply - Call
NGTB30N120IHSWG DISTI # NGTB30N120IHSWG	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 60A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: NGTB30N120IHSWG) Min Qty: 166 Container: Bulk	Americas - 0	166:$1.8900 332:$1.8900 498:$1.8900 830:$1.8900 1660:$1.7900
NGTB30N120IHSWG DISTI # 70341221	ON Semiconductor	IGBT,1200V,30A,induction heating,TO247 RoHS: Compliant	0	10:$2.6500 50:$2.5200 100:$2.3900 250:$2.2700
NGTB30N120IHSWG DISTI # 863-NGTB30N120IHSWG	ON Semiconductor	IGBT Transistors 1200/30A IGBT LPT TO-24 RoHS: Compliant	0
NGTB30N120IHSWG	ON Semiconductor	Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	6948	1000:$1.9900 500:$2.0900 100:$2.1800 25:$2.2700 1:$2.4500

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