IRF634SPBF

Mfr. #:: IRF634SPBF
제조사:: Vishay
설명:: Darlington Transistors MOSFET N-Chan 250V 8.1 Amp
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRF634SPBF 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사: IR

제품 카테고리: FET - 단일

포장: 튜브

단위 무게: 0.050717 oz

장착 스타일: SMD/SMT

패키지 케이스: TO-252-3

기술: 시

채널 수: 1 Channel

구성: 하나의

트랜지스터형: 1 N-Channel

Pd 전력 손실: 3.1 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 19 ns

상승 시간: 21 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 8.1 A

Vds-드레인-소스-고장-전압: 250 V

Rds-On-Drain-Source-Resistance: 450 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 42 ns

일반 켜기 지연 시간: 9.6 ns

채널 모드: 상승

Tags: IRF634S, IRF634, IRF63, IRF6, IRF

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF634SPBF 설명

***et: Trans MOSFET N-CH 250V 8.1A 3-Pin(2+Tab) D2PAK

***ser: Single-Gate MOSFET Transistors N-Chan 250V 8.1 Amp

***ical: Trans MOSFET N-CH 250V 8.1A 3-Pin (2+Tab) SMD-220

***i-Key: MOSFET N-CH 250V 8.1A D2PAK

***nell: N CH MOSFET, 250V, 8.1A, SMD-220

***: 250V N-CH HEXFET MOSFET,D2-PAK

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:250V; Continuous Drain Current, Id:8.1A; On Resistance, Rds(on):450mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes

Market price

부분 #	제조	설명	재고	가격
IRF634SPBF DISTI # IRF634SPBF-ND	Vishay Siliconix	MOSFET N-CH 250V 8.1A D2PAK RoHS: Compliant Min Qty: 1000 Container: Tube	Limited Supply - Call
IRF634SPBF DISTI # 63J7348	Vishay Intertechnologies	N CHANNEL MOSFET, 250V, 8.1A, SMD-220,Transistor Polarity:N Channel,Continuous Drain Current Id:8.1A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.45ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V RoHS Compliant: Yes	0
IRF634SPBF DISTI # 844-IRF634SPBF	Vishay Intertechnologies	MOSFET N-Chan 250V 8.1 Amp RoHS: Compliant	0
IRF634SPBF	International Rectifier	POWER FIELD-EFFECT TRANSISTOR, 8.1A I(D), 250V, 0.45OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB	10	3:$2.3750 1:$2.8500

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