SIE806DF-T1-E3

Mfr. #:: SIE806DF-T1-E3
제조사:: Vishay
설명:: RF Bipolar Transistors MOSFET 30V 60A 125W 1.7mohm @ 10V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SIE806DF-T1-E3 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사: 비쉐이 / 실리콘닉스

제품 카테고리: 트랜지스터 - FET, MOSFET - 단일

포장: 릴

부분 별칭: SIE806DF-E3

장착 스타일: SMD/SMT

패키지 케이스: PolarPAK-10

기술: 시

채널 수: 1 Channel

구성: 하나의

트랜지스터형: 1 N-Channel

Pd 전력 손실: 5.2 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 15 ns 10 ns

상승 시간: 160 ns 50 ns

Vgs 게이트 소스 전압: 12 V

Id-연속-드레인-전류: 41.3 A

Vds-드레인-소스-고장-전압: 30 V

Rds-On-Drain-Source-Resistance: 1.7 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 85 ns

일반 켜기 지연 시간: 125 ns 20 ns

채널 모드: 상승

Tags: SIE806, SIE80, SIE8, SIE

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIE806DF-T1-E3 설명

***ure Electronics: Single N-Channel 30 V 0.0017 Ohms Surface Mount Power Mosfet - PolarPAK

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:60000mA; On Resistance, Rds(on):0.0021ohm; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.3V ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, POLAR PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:202A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.3V; Power Dissipation Pd:125W; Transistor Case Style:PolarPAK; No. of Pins:10; SVHC:No SVHC (20-Jun-2011); Base Number:806; Current Id Max:60A; N-channel Gate Charge:75nC; On State Resistance @ Vgs = 4.5V:2.1mohm; On State resistance @ Vgs = 10V:1.7mohm; Package / Case:PolarPAK; Power Dissipation Pd:125W; Power Dissipation Pd:125mW; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:0.6V

Market price

부분 #	제조	설명	재고	가격
SIE806DF-T1-E3 DISTI # SIE806DF-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 60A 10-POLARPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
SIE806DF-T1-E3 DISTI # SIE806DF-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 60A 10-POLARPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SIE806DF-T1-E3 DISTI # SIE806DF-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 60A 10-POLARPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SIE806DF-T1-E3 DISTI # 781-SIE806DF-T1-E3	Vishay Intertechnologies	MOSFET 30V 60A 125W 1.7mohm @ 10V RoHS: Compliant	0
SIE806DF-T1-E3	Vishay Intertechnologies		157
SIE806DF-T1-E3 DISTI # 1497640	Vishay Intertechnologies	MOSFET, N, POLAR PAK RoHS: Compliant	0	1:$4.9200 10:$4.2800 50:$3.6100 100:$3.3800 500:$3.1200 1000:$2.9500

영상	부분 #	설명
	Mfr.#: SIE806DF-T1-GE3 OMO.#: OMO-SIE806DF-T1-GE3-VISHAY	MOSFET 30V 202A 125W 1.7mohm @ 10V
	Mfr.#: SIE806DF-T1-E3 OMO.#: OMO-SIE806DF-T1-E3-VISHAY	RF Bipolar Transistors MOSFET 30V 60A 125W 1.7mohm @ 10V
	Mfr.#: SIE806DF OMO.#: OMO-SIE806DF-1190	신규 및 오리지널
	Mfr.#: SIE806DF,SIE806DF-T1-E3 OMO.#: OMO-SIE806DF-SIE806DF-T1-E3-1190	신규 및 오리지널

SIE806DF-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes