 |  | | |
| PartNumber | SIE806DF-T1-E3 | SIE806DF | SIE806DF,SIE806DF-T1-E3 |
| Description | RF Bipolar Transistors MOSFET 30V 60A 125W 1.7mohm @ 10V | ||
| Manufacturer | Vishay / Siliconix | Vishay / Siliconix | - |
| Product Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single | - |
| Packaging | Reel | Reel | - |
| Part Aliases | SIE806DF-E3 | SIE806DF-E3 | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package Case | PolarPAK-10 | PolarPAK-10 | - |
| Technology | Si | Si | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Configuration | Single | Single | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Pd Power Dissipation | 5.2 W | 5.2 W | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Fall Time | 15 ns 10 ns | 15 ns 10 ns | - |
| Rise Time | 160 ns 50 ns | 160 ns 50 ns | - |
| Vgs Gate Source Voltage | 12 V | 12 V | - |
| Id Continuous Drain Current | 41.3 A | 41.3 A | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Rds On Drain Source Resistance | 1.7 mOhms | 1.7 mOhms | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Typical Turn Off Delay Time | 85 ns | 85 ns | - |
| Typical Turn On Delay Time | 125 ns 20 ns | 125 ns 20 ns | - |
| Channel Mode | Enhancement | Enhancement | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay |
SIE806DF-T1-GE3 | MOSFET 30V 202A 125W 1.7mohm @ 10V | |
| SIE806DF-T1-E3 | RF Bipolar Transistors MOSFET 30V 60A 125W 1.7mohm @ 10V | ||
| SIE806DF | 신규 및 오리지널 | ||
| SIE806DF,SIE806DF-T1-E3 | 신규 및 오리지널 |