NGTB35N60FL2WG

Mfr. #:: NGTB35N60FL2WG
제조사:: ON Semiconductor
설명:: IGBT Transistors 600V/35A FAST IGBT FSII T
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: NGTB35N60FL2WG 데이터 시트
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추가 정보:: NGTB35N60FL2WG 추가 정보

제품 속성
속성 값

제조사: 온세미컨덕터

제품 카테고리: IGBT - 싱글

시리즈: -

포장: 튜브

단위 무게: 1.340411 oz

장착 스타일: 구멍을 통해

패키지 케이스: TO-247-3

입력 유형: 기준

장착형: 구멍을 통해

공급자-장치-패키지: TO-247

구성: 하나의

파워맥스: 300W

역복구-시간-trr: 68ns

전류 수집기 Ic-Max: 70A

Voltage-Collector-Emitter-Breakdown-Max: 600V

IGBT형: 트렌치 필드 스톱

전류 수집기 펄스 Icm: 120A

Vce-on-Max-Vge-Ic: 2V @ 15V, 35A

스위칭 에너지: 840μJ (on), 280μJ (off)

게이트 차지: 125nC

Td-on-off-25°C: 72ns/132ns

시험조건: 400V, 35A, 10 Ohm, 15V

Pd 전력 손실: 300 W

최대 작동 온도: + 175 C

최소 작동 온도: - 55 C

컬렉터-이미터-전압-VCEO-최대: 600 V

컬렉터-이미터-포화-전압: 2.2 V

연속 수집기 전류 at-25-C: 70 A

게이트 이미 터 누설 전류: 200 nA

최대 게이트 이미 터 전압: 20 V

연속 수집기 전류 Ic-Max: 70 A

Tags: NGTB35, NGTB3, NGTB, NGT

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NGTB35N60FL2WG 추가 정보

Field Stop II Series IGBTs: ON Semiconductor's Field Stop II Series IGBTs feature a robust and cost effective Field Stop II Trench construction, and provides superior performance, offering both low on state voltage and minimal switching loss. Features include extremely efficient trench, short circuit capable, available in rates of 15A to 75A, reduction in switching losses, and reduction in input capacitance. These IGBTs are well suited for UPS, solar, half bridge resonant, or demanding switching applications. Incorporated into each device is a soft and fast co−packaged free wheeling diode with a low forward voltage.Learn More

Market price

부분 #	제조	설명	재고	가격
NGTB35N60FL2WG DISTI # V99:2348_07286008	ON Semiconductor	Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	28	500:$2.4110 250:$2.6690 100:$2.8160 10:$3.1950 1:$4.0403
NGTB35N60FL2WG DISTI # NGTB35N60FL2WGOS-ND	ON Semiconductor	IGBT 600V 70A 300W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	2520:$2.2147 510:$2.7572 120:$3.2389 30:$3.7373 10:$3.9530 1:$4.4000
NGTB35N60FL2WG DISTI # 25862784	ON Semiconductor	Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	28	500:$2.5918 250:$2.8692 100:$3.0272 10:$3.4346 3:$3.9485
NGTB35N60FL2WG DISTI # NGTB35N60FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 600V 70A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTB35N60FL2WG) RoHS: Compliant Min Qty: 30 Container: Tube	Americas - 10	300:$1.9530 150:$2.0024 90:$2.0281 60:$2.0544 30:$2.0678
NGTB35N60FL2WG DISTI # NGTB35N60FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 600V 70A 3-Pin TO-247 Tube (Alt: NGTB35N60FL2WG) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€1.7900 100:€1.9900 500:€1.9900 50:€2.0900 25:€2.1900 10:€2.2900 1:€2.4900
NGTB35N60FL2WG DISTI # NGTB35N60FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 600V 70A 3-Pin TO-247 Tube - Bulk (Alt: NGTB35N60FL2WG) Min Qty: 143 Container: Bulk	Americas - 0	1430:$2.0900 286:$2.1900 429:$2.1900 715:$2.1900 143:$2.2900
NGTB35N60FL2WG. DISTI # 29AC8927	ON Semiconductor	DC Collector Current:70A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:300W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:-,MSL:- RoHS Compliant: Yes	0	300:$1.9800 150:$2.0400 62:$2.0600 32:$2.0900 1:$2.1000
NGTB35N60FL2WG DISTI # 70600202	ON Semiconductor	NGTB35N60FL2WG,IGBT Transistor,70 A 600 V,1MHz,3-Pin TO-247 RoHS: Compliant	0	2:$2.9900 10:$2.8400 20:$2.7000 50:$2.5600 100:$2.4300
NGTB35N60FL2WG DISTI # 863-NGTB35N60FL2WG	ON Semiconductor	IGBT Transistors 600V/35A FAST IGBT FSII T RoHS: Compliant	28	1:$4.1800 10:$3.5500 100:$3.0800 250:$2.9200 500:$2.6200
NGTB35N60FL2WG	ON Semiconductor	Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel RoHS: Compliant	3510	1000:$2.3200 500:$2.4400 100:$2.5400 25:$2.6500 1:$2.8500
NGTB35N60FL2WG DISTI # 8427894P	ON Semiconductor	IGBT FIELD STOP II 600V 35A DIODE TO247, TU	32	100:£1.6350 50:£1.8100 20:£1.8500 10:£1.8900
NGTB35N60FL2WG DISTI # 2452036	ON Semiconductor	600V/35A FAST IGBT FSII T RoHS: Compliant	0	500:$4.0300 250:$4.4900 100:$4.7400 10:$5.4600 1:$6.4300
NGTB35N60FL2WG DISTI # 2452036	ON Semiconductor	600V/35A FAST IGBT FSII T RoHS: Compliant	0	500:£2.0100 250:£2.2400 100:£2.3600 10:£2.7200 1:£3.5800

영상	부분 #	설명
	Mfr.#: NGTB35N65FL2WG OMO.#: OMO-NGTB35N65FL2WG	IGBT Transistors 650V/35A FAST IGBT FSII T
	Mfr.#: NGTB35N60FL2WG OMO.#: OMO-NGTB35N60FL2WG	IGBT Transistors 600V/35A FAST IGBT FSII T
	Mfr.#: NGTB35N65FL2WG OMO.#: OMO-NGTB35N65FL2WG-ON-SEMICONDUCTOR	IGBT Transistors 650V/35A FAST IGBT FSII T
	Mfr.#: NGTB35N60FL2WG OMO.#: OMO-NGTB35N60FL2WG-ON-SEMICONDUCTOR	IGBT Transistors 600V/35A FAST IGBT FSII T
	Mfr.#: NGTB35N60FL2W OMO.#: OMO-NGTB35N60FL2W-1190	신규 및 오리지널
	Mfr.#: NGTB35N65FL2 OMO.#: OMO-NGTB35N65FL2-1190	신규 및 오리지널

NGTB35N60FL2WG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes