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IRF3707ZLPBF

IRF3707ZLPBF
Mfr. #:
IRF3707ZLPBF
제조사:
Infineon Technologies
설명:
IGBT Transistors MOSFET MOSFT 30V 59A 9.5mOhm 9.7nC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRF3707ZLPBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF3707ZLPBF DatasheetIRF3707ZLPBF Datasheet (P4-P6)IRF3707ZLPBF Datasheet (P7-P9)IRF3707ZLPBF Datasheet (P10-P12)
ECAD Model:
제품 속성
속성 값
Tags
IRF3707Z, IRF3707, IRF370, IRF37, IRF3, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
***(Formerly Allied Electronics)
MOSFET, 30V, 59A, 9.5 MOHM, 9.7 NC QG, TO-262
***et Europe
Trans MOSFET N-CH 30V 59A 3-Pin(3+Tab) TO-262
*** Electronic Components
IGBT Transistors MOSFET MOSFT 30V 59A 9.5mOhm 9.7nC
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:59A; On Resistance, Rds(on):9.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
***ical
Trans MOSFET N-CH 55V 75A Automotive 3-Pin(3+Tab) TO-262 Rail
***emi
75A, 55V, 0.008 Ohm, N-Channel UltraFET® Power MOSFETs.
***r Electronics
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***rchild Semiconductor
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75344.
***ure Electronics
Single N-Channel 60 V 15.8 mOhm 22 nC HEXFET® Power Mosfet - TO-262-3
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ment14 APAC
MOSFET, N, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:71W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:43A; Package / Case:TO-262; Power Dissipation Pd:71W; Pulse Current Idm:170A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 55 V 8 mOhm 60 nC HEXFET® Power Mosfet - TO-262
***(Formerly Allied Electronics)
MOSFET, 55V, 86A, 8 MOHM, 40 NC QG, LOGIC LEVEL, TO-262
***Yang
Trans MOSFET N-CH 55V 86A 3-Pin(3+Tab) TO-262 - Rail/Tube
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature; Logic Level
***i-Key Marketplace
IRL3705ZL - 12V-300V N-CHANNEL P
***el Electronic
CAP CER 470PF 100V C0G/NP0 RAD
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:75A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
***ure Electronics
Single N-Channel 55 V 17.5 mOhm 63 nC HEXFET® Power Mosfet - TO-262
*** Source Electronics
Trans MOSFET N-CH 55V 49A 3-Pin(3+Tab) TO-262 Tube / MOSFET N-CH 55V 49A TO-262
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***roFlash
Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:55V; On Resistance Rds(on):17.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:110W; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:49A; Package / Case:TO-262; Power Dissipation Pd:110W; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 49 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 17.5 / Gate-Source Voltage V = 20 / Fall Time ns = 45 / Rise Time ns = 60 / Turn-OFF Delay Time ns = 44 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-262 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 94
***emi
PowerTrench® MOSFET, N-Channel, 100V, 57A, 16mΩ
***r Electronics
Power Field-Effect Transistor, 57A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***roFlash
Transistor, mosfet, n-Channel, 100V V(Br)Dss, 56A I(D), to-262Aa Rohs Compliant: Yes
***emi
N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ
***r Electronics
Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ark
MOSFET, N-CH, 100V, 56A, TO-262AA; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:56A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***rchild Semiconductor
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
부분 # 제조 설명 재고 가격
IRF3707ZLPBF
DISTI # IRF3707ZLPBF-ND		Infineon Technologies AGMOSFET N-CH 30V 59A TO-262
RoHS: Compliant
Min Qty: 450
Container: Tube		Limited Supply - Call
    IRF3707ZLPBF
    DISTI # 70018200    		Infineon Technologies AGMOSFET,30V,59A,9.5 MOHM,9.7 NC QG,TO-262
    RoHS: Compliant    		0
    • 450:$1.2200
    • 500:$1.1100
    • 1000:$1.0200
    • 2500:$0.9400
    IRF3707ZLPBF
    DISTI # 942-IRF3707ZLPBF    		Infineon Technologies AGMOSFET MOSFT 30V 59A 9.5mOhm 9.7nC
    RoHS: Compliant    		0
      영상 부분 # 설명
      IRF3706PBF

      Mfr.#: IRF3706PBF

      OMO.#: OMO-IRF3706PBF

      		 MOSFET 20V 1 N-CH HEXFET 8.5mOhms 23nC
      IRF3704STRLPBF

      Mfr.#: IRF3704STRLPBF

      OMO.#: OMO-IRF3704STRLPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 20V 77A D2PAK
      IRF3707STRRPBF

      Mfr.#: IRF3707STRRPBF

      OMO.#: OMO-IRF3707STRRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 62A D2PAK
      IRF3709S

      Mfr.#: IRF3709S

      OMO.#: OMO-IRF3709S-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 90A D2PAK
      IRF3709ZCLPBF

      Mfr.#: IRF3709ZCLPBF

      OMO.#: OMO-IRF3709ZCLPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 87A TO-262
      IRF3703PBF

      Mfr.#: IRF3703PBF

      OMO.#: OMO-IRF3703PBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 210A TO-220AB
      IRF3703PBF,IRF3703,

      Mfr.#: IRF3703PBF,IRF3703,

      OMO.#: OMO-IRF3703PBF-IRF3703--1190

      		 신규 및 오리지널
      IRF3704STRR

      Mfr.#: IRF3704STRR

      OMO.#: OMO-IRF3704STRR-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 20V 77A D2PAK
      IRF3704ZCS

      Mfr.#: IRF3704ZCS

      OMO.#: OMO-IRF3704ZCS-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 20V 67A D2PAK
      IRF3707STRLPBF

      Mfr.#: IRF3707STRLPBF

      OMO.#: OMO-IRF3707STRLPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 62A D2PAK
      유효성
      재고:
      Available
      주문 시:
      1000
      수량 입력:
      IRF3707ZLPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$1.41
      US$1.41
      10
      US$1.34
      US$13.40
      100
      US$1.27
      US$126.90
      500
      US$1.20
      US$599.25
      1000
      US$1.13
      US$1 128.00
      시작
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