IPT60R080G7XTMA1

Mfr. #:: IPT60R080G7XTMA1
제조사:: Infineon Technologies
설명:: MOSFET N-CH 650V 29A HSOF-8
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IPT60R080G7XTMA1 데이터 시트
배달:: DHL FedEx Ups TNT EMS
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ECAD Model:
추가 정보:: IPT60R080G7XTMA1 추가 정보

제품 속성
속성 값

Tags: IPT60R0, IPT60, IPT6, IPT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPT60R080G7XTMA1 설명

***nell: MOSFET, N-CH, 600V, 29A, 167W, HSOF

***ark: Mosfet, N-Ch, 600V, 29A, 167W, Hsof; Transistor Polarity:n Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.069Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

***ineon: The CoolMOS C7 Gold series (G7) for the first time brings together the benefits of the improved 600V CoolMOS C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC. | Summary of Features: Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G; Enables best-in-class R DS(on) in smallest footprint | Benefits: Higher efficiency due to the improved C7 Gold technology and faster switching due to the package low parasitic source inductance and the 4pin Kelvin source concept; Improved power density due to low R DS(on) in small footprint, by either replacing TO-packages (height restrictions) or paralleling SMD packages due to thermal or R DS(on) requirements; Production cost reduction by moving to SMD through quicker assembly times | Target Applications: Telecom; Server; Solar; Industrial SMPS

IPT60R080G7XTMA1 추가 정보

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ C7 Gold (G7) Power MOSFETs: Infineon Technologies CoolMOS™ C7 Gold (G7) Power MOSFETs are housed in the new SMD TO-Leadless (TOLL) package using the Kelvin source concept. The G7 MOSFETs combine improved 600V and 650V CoolMOS™ G7 technology, 4-pin Kelvin source capability, and the improved thermal properties of the TO-Leadless package. This enables an SMD solution for high current hard switching topologies like power factor correction (PFC) up to 3kW. For the 600V CoolMOS™ G7, the MOSFETs can be used for resonant circuits like high end LLC.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

부분 #	제조	설명	재고	가격
IPT60R080G7XTMA1 DISTI # V72:2272_17076899	Infineon Technologies AG	IPT60R080G7XTMA1	0
IPT60R080G7XTMA1 DISTI # V36:1790_17076899	Infineon Technologies AG	IPT60R080G7XTMA1	0
IPT60R080G7XTMA1 DISTI # IPT60R080G7XTMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 650V 29A HSOF-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2859In Stock	1000:$3.7988 500:$4.3616 100:$5.0088 10:$6.0500 1:$6.7000
IPT60R080G7XTMA1 DISTI # IPT60R080G7XTMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 650V 29A HSOF-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2859In Stock	1000:$3.7988 500:$4.3616 100:$5.0088 10:$6.0500 1:$6.7000
IPT60R080G7XTMA1 DISTI # IPT60R080G7XTMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 650V 29A HSOF-8 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	2000In Stock	2000:$3.6427
IPT60R080G7XTMA1 DISTI # IPT60R080G7XTMA1	Infineon Technologies AG	HIGH POWER_NEW - Tape and Reel (Alt: IPT60R080G7XTMA1) RoHS: Compliant Min Qty: 2000 Container: Reel	Americas - 0	12000:$3.2900 20000:$3.2900 8000:$3.3900 4000:$3.5900 2000:$3.6900
IPT60R080G7XTMA1 DISTI # 84AC6841	Infineon Technologies AG	MOSFET, N-CH, 600V, 29A, 167W, HSOF,Transistor Polarity:N Channel,Continuous Drain Current Id:29A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.069ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	2298	1000:$3.5500 500:$4.0700 250:$4.4600 100:$4.6800 50:$5.0300 25:$5.3800 10:$5.6500 1:$6.2500
IPT60R080G7XTMA1 DISTI # 726-IPT60R080G7XTMA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	1680	1:$6.1900 10:$5.5900 25:$5.3300 100:$4.6300 250:$4.4200 500:$4.0300 1000:$3.5100 2000:$3.3800
IPT60R080G7XTMA1 DISTI # 2983371	Infineon Technologies AG	MOSFET, N-CH, 600V, 29A, 167W, HSOF	2298	500:£2.9600 250:£3.2300 100:£3.3800 10:£3.9000 1:£5.0100
IPT60R080G7XTMA1 DISTI # 2983371	Infineon Technologies AG	MOSFET, N-CH, 600V, 29A, 167W, HSOF RoHS: Compliant	2298	250:$5.2100 100:$5.4700 25:$6.1500 1:$7.0200

관련 상품

영상

부분 #

설명

Mfr.#: IPT60R080G7XTMA1

OMO.#: OMO-IPT60R080G7XTMA1

MOSFET HIGH POWER_NEW

Mfr.#: IPT60R080G7XTMA1

OMO.#: OMO-IPT60R080G7XTMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 650V 29A HSOF-8

Mfr.#: IPT60R080G7XTMA1 60R080G7

OMO.#: OMO-IPT60R080G7XTMA1-60R080G7-1190

신규 및 오리지널

유효성

재고:: Available
주문 시:: 5500
수량 입력:

IPT60R080G7XTMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$4.53~~; ~~US$4.53~~

10: ~~US$4.30~~; ~~US$42.99~~

100: ~~US$4.07~~; ~~US$407.30~~

500: ~~US$3.85~~; ~~US$1 923.35~~

1000: ~~US$3.62~~; ~~US$3 620.40~~

시작

IPT60R0 10
IPT60 13
IPT6 21
IPT 312

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More Newest Products

IPT60R080G7XTMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes