TH58NYG3S0HBAI4

Mfr. #:: TH58NYG3S0HBAI4
제조사:: Toshiba Memory
설명:: 8GB SLC NAND 24NM BGA 9X11 3.3V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: TH58NYG3S0HBAI4 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

Tags: TH58NYG3, TH58NY, TH58N, TH58, TH5

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TH58NYG3S0HBAI4 설명

***et: 8G(4G x 2)bit, generation: 24nm, VCC=1.7 to 1.95V

***i-Key: 8GB SLC NAND 24NM BGA 9X11 3.3V

Market price

부분 #	제조	설명	재고	가격
TH58NYG3S0HBAI4 DISTI # V36:1790_21592784	Toshiba America Electronic Components	NAND Flash Parallel 1.8V 8G-bit 1G x 8 63-Pin FBGA	0
TH58NYG3S0HBAI4 DISTI # TH58NYG3S0HBAI4-ND	Toshiba Semiconductor and Storage Products	8GB SLC NAND 24NM BGA 9X11 3.3V RoHS: Compliant Min Qty: 1 Container: Tray	210In Stock	1050:$6.1661 630:$6.3899 420:$6.7188 210:$6.9289 50:$7.7236 25:$7.7512 10:$7.9150 1:$8.6000
TH58NYG3S0HBAI4 DISTI # TH58NYG3S0HBAI4	Toshiba America Electronic Components	8G(4G x 2)bit, generation: 24nm, VCC=1.7 to 1.95V - Trays (Alt: TH58NYG3S0HBAI4) RoHS: Compliant Min Qty: 210 Container: Tray	Americas - 0	2100:$5.1900 1260:$5.2900 840:$5.4900 420:$5.5900 210:$5.6900
TH58NYG3S0HBAI4 DISTI # 757-TH58NYG3S0HBAI4	Toshiba America Electronic Components	NAND Flash 1.8V 8Gb 24nm SLC NAND (EEPROM) RoHS: Compliant	193	1:$8.6000 10:$7.9200 25:$7.7500 50:$7.7200 100:$6.9300 250:$6.7200 500:$6.3900 1000:$6.1700

관련 상품

영상	부분 #	설명
	Mfr.#: TH58NYG3S0HBAI4 OMO.#: OMO-TH58NYG3S0HBAI4	NAND Flash 1.8V 8Gb 24nm SLC NAND (EEPROM)
	Mfr.#: TH58NYG2S3HBAI6 OMO.#: OMO-TH58NYG2S3HBAI6	NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
	Mfr.#: TH58NYG2S3HBAI4 OMO.#: OMO-TH58NYG2S3HBAI4-TOSHIBA-MEMORY-AMERICA	Flash Memory 4Gb 1.8V IC Flash NAND EEPROM
	Mfr.#: TH58NYG3S0HBAI4 OMO.#: OMO-TH58NYG3S0HBAI4-TOSHIBA-MEMORY-AMERICA	8GB SLC NAND 24NM BGA 9X11 3.3V
	Mfr.#: TH58NYG4S0FBAID OMO.#: OMO-TH58NYG4S0FBAID-1190	신규 및 오리지널
	Mfr.#: TH58NYG4S5FBAID OMO.#: OMO-TH58NYG4S5FBAID-1190	신규 및 오리지널
	Mfr.#: TH58NYG2S3HBAI4-ND OMO.#: OMO-TH58NYG2S3HBAI4-ND-1190	신규 및 오리지널
	Mfr.#: TH58NYG3S0HBAI4-ND OMO.#: OMO-TH58NYG3S0HBAI4-ND-1190	신규 및 오리지널
	Mfr.#: TH58NYG3S0HBAI6 OMO.#: OMO-TH58NYG3S0HBAI6-TOSHIBA-MEMORY-AMERICA	NAND Flash Serial 1.8V 8G-bit 1G x 8 67-Pin VFBGA
	Mfr.#: TH58NYG3S0HBAI6-ND OMO.#: OMO-TH58NYG3S0HBAI6-ND-1190	신규 및 오리지널