STGW80H65DFB

STGW80H65DFB
Mfr. #:
STGW80H65DFB
제조사:
STMicroelectronics
설명:
IGBT 650V 120A 469W TO-247
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
STGW80H65DFB 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
STGW80H65DFB 추가 정보 STGW80H65DFB Product Details
제품 속성
속성 값
제조사
ST마이크로일렉트로닉스
제품 카테고리
IGBT - 싱글
시리즈
600-650V IGBTs
포장
튜브
단위 무게
1.340411 oz
장착 스타일
구멍을 통해
패키지 케이스
TO-247-3
입력 유형
기준
장착형
구멍을 통해
공급자-장치-패키지
TO-247
구성
하나의
파워맥스
469W
역복구-시간-trr
85ns
전류 수집기 Ic-Max
120A
Voltage-Collector-Emitter-Breakdown-Max
650V
IGBT형
트렌치 필드 스톱
전류 수집기 펄스 Icm
240A
Vce-on-Max-Vge-Ic
2V @ 15V, 80A
스위칭 에너지
2.1mJ (on), 1.5mJ (off)
게이트 차지
414nC
Td-on-off-25°C
84ns/280ns
시험조건
400V, 80A, 10 Ohm, 15V
Pd 전력 손실
469 W
최대 작동 온도
+ 175 C
최소 작동 온도
- 55 C
컬렉터-이미터-전압-VCEO-최대
650 V
컬렉터-이미터-포화-전압
1.6 V
연속 수집기 전류 at-25-C
120 A
게이트 이미 터 누설 전류
250 nA
최대 게이트 이미 터 전압
20 V
연속 수집기 전류 Ic-Max
80 A
Tags
STGW80H, STGW80, STGW8, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247
***ure Electronics
HB Series 650 V 80 A High Speed Trench Gate Field-Stop IGBT - TO-247
***ical
Trans IGBT Chip N-CH 650V 120A 470000mW 3-Pin(3+Tab) TO-247 Tube
***p One Stop Global
Trans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube
***ied Electronics & Automation
IGBT N-Ch 650V 80A High-Speed TO247
***i-Key
IGBT 650V 120A 469W TO-247
***ark
IGBT, SINGLE, 650V, 120A, TO-247; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:469W; Collector Emitter Voltage V(br)ceo:650V; No. of Pins:3Pins; Operating Temperature Max:175�C RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 650V, 120A, TO-247; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:469W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HB Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)
***nell
IGBT SINGOLO 650V 120A TO-247; Corrente di Collettore CC:120A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:469W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:HB Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)
IGBT HB/HB2 Series
STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.
부분 # 제조 설명 재고 가격
STGW80H65DFB
DISTI # V36:1790_06560788
STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
0
    STGW80H65DFB
    DISTI # 497-14368-ND
    STMicroelectronicsIGBT 650V 120A 469W TO-247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    On Order
    • 1020:$4.8225
    • 510:$5.4525
    • 120:$6.1770
    • 30:$7.0277
    • 1:$8.0700
    STGW80H65DFB-4
    DISTI # STGW80H65DFB-4-ND
    STMicroelectronicsIGBT BIPO 650V 80A TO247
    RoHS: Compliant
    Min Qty: 600
    Container: Tube
    Temporarily Out of Stock
    • 600:$9.9325
    STGW80H65DFB
    DISTI # STGW80H65DFB
    STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube (Alt: STGW80H65DFB)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 1:€4.7900
    • 10:€4.3900
    • 25:€4.1900
    • 50:€3.9900
    • 100:€3.8900
    • 500:€3.6900
    • 1000:€3.4900
    STGW80H65DFB
    DISTI # STGW80H65DFB
    STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW80H65DFB)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube
    Americas - 0
    • 600:$4.3900
    • 1200:$4.1900
    • 2400:$3.9900
    • 3600:$3.8900
    • 6000:$3.7900
    STGW80H65DFB
    DISTI # STGW80H65DFB-4
    STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW80H65DFB-4)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube
    Americas - 0
    • 600:$8.5900
    • 1200:$8.1900
    • 2400:$7.8900
    • 3600:$7.4900
    • 6000:$7.3900
    STGW80H65DFB
    DISTI # 45AC7608
    STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube - Bulk (Alt: 45AC7608)
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk
    Americas - 0
    • 1:$7.1400
    • 10:$6.4600
    • 25:$6.1600
    • 50:$5.7500
    • 100:$5.3400
    • 250:$5.1100
    • 500:$4.6500
    STGW80H65DFB-4
    DISTI # STGW80H65DFB-4
    STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 4-Pin TO-247 Tube (Alt: STGW80H65DFB-4)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 1:€8.7900
    • 10:€8.0900
    • 25:€7.6900
    • 50:€7.3900
    • 100:€7.1900
    • 500:€6.8900
    • 1000:€6.3900
    STGW80H65DFB
    DISTI # 45AC7608
    STMicroelectronicsIGBT, SINGLE, 650V, 120A, TO-247,DC Collector Current:120A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:469W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes0
    • 500:$4.7000
    • 250:$5.1500
    • 100:$5.3900
    • 50:$5.8000
    • 25:$6.2100
    • 10:$6.5100
    • 1:$7.2000
    STGW80H65DFB-4
    DISTI # 26Y5820
    STMicroelectronicsPTD HIGH VOLTAGE0
    • 1:$7.2500
    STGW80H65DFB
    DISTI # 511-STGW80H65DFB
    STMicroelectronicsIGBT Transistors Trench gte FieldStop IGBT 650V 80A
    RoHS: Compliant
    0
    • 1:$7.1300
    • 10:$6.4500
    • 25:$6.1500
    • 100:$5.3400
    • 250:$5.1000
    • 500:$4.6500
    • 1000:$4.0500
    STGW80H65DFB-4
    DISTI # 511-STGW80H65DFB-4
    STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed0
    • 1:$12.1700
    • 10:$11.1900
    • 25:$10.7300
    • 100:$9.4500
    • 250:$8.9900
    • 500:$8.4100
    • 1000:$7.7100
    STGW80H65DFBACTIVE COMPNTS/DIODES 25
      STGW80H65DFB
      DISTI # 7925814P
      STMicroelectronicsIGBT N-CH 650V 80A HIGH-SPEED TO247, TU384
      • 20:£4.5800
      • 10:£4.6700
      STGW80H65DFB
      DISTI # 2807180
      STMicroelectronicsIGBT, SINGLE, 650V, 120A, TO-247
      RoHS: Compliant
      472
      • 1020:$6.3200
      • 510:$7.2600
      • 120:$8.3300
      • 30:$9.5900
      • 1:$11.1400
      STGW80H65DFB
      DISTI # 2807180
      STMicroelectronicsIGBT, SINGLE, 650V, 120A, TO-247
      RoHS: Compliant
      472
      • 100:£4.2300
      • 50:£4.5600
      • 10:£4.8800
      • 5:£5.6600
      • 1:£6.2000
      영상 부분 # 설명
      STGW80V60DF

      Mfr.#: STGW80V60DF

      OMO.#: OMO-STGW80V60DF

      IGBT Transistors Trench gate V series 600V 80A HiSpd
      STGW80H65FB

      Mfr.#: STGW80H65FB

      OMO.#: OMO-STGW80H65FB

      IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
      STGW80H65DFB

      Mfr.#: STGW80H65DFB

      OMO.#: OMO-STGW80H65DFB

      IGBT Transistors Trench gte FieldStop IGBT 650V 80A
      STGW80H65FB-4

      Mfr.#: STGW80H65FB-4

      OMO.#: OMO-STGW80H65FB-4

      IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
      STGW80H65DFB-4

      Mfr.#: STGW80H65DFB-4

      OMO.#: OMO-STGW80H65DFB-4-STMICROELECTRONICS

      IGBT Transistors IGBT & Power Bipola
      STGW80H65FB-4

      Mfr.#: STGW80H65FB-4

      OMO.#: OMO-STGW80H65FB-4-STMICROELECTRONICS

      IGBT Transistors IGBT & Power Bipola
      STGW80H65FB

      Mfr.#: STGW80H65FB

      OMO.#: OMO-STGW80H65FB-STMICROELECTRONICS

      IGBT Transistors IGBT & Power Bipola
      STGW80V60F

      Mfr.#: STGW80V60F

      OMO.#: OMO-STGW80V60F-STMICROELECTRONICS

      IGBT Transistors IGBT & Power Bipola
      STGW80V60DF

      Mfr.#: STGW80V60DF

      OMO.#: OMO-STGW80V60DF-STMICROELECTRONICS

      IGBT 600V 120A 469W TO247
      STGW80H65DFB

      Mfr.#: STGW80H65DFB

      OMO.#: OMO-STGW80H65DFB-STMICROELECTRONICS

      IGBT 650V 120A 469W TO-247
      유효성
      재고:
      Available
      주문 시:
      2500
      수량 입력:
      STGW80H65DFB의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$5.68
      US$5.68
      10
      US$5.40
      US$54.01
      100
      US$5.12
      US$511.65
      500
      US$4.83
      US$2 416.15
      1000
      US$4.55
      US$4 548.00
      시작
      최신 제품
      • PWD13F60 High-Density Power Driver
        STMicroelectronics' PWD13F60 integrated power MOSFET full bridge with embedded gate drivers in a 13 mm x 10 mm outline.
      • STSPIN32F0 Motor-Control System
        STMicroelectronics' STSPIN32F0 motor-control system-in-package combines the power and flexibility of a microcontroller-based drive with ease of use and space efficiency.
      • STripFET VI DeepGATE Series Power MOSFETs
        STMicroelectronics' 80 V MOSFETs with DeepGATE process integration result a more efficient and denser design in applications such as motor control and DC/DC converters.
      • Compare STGW80H65DFB
        STGW80H65DFB vs STGW80H65DFB4 vs STGW80H65FB
      • ESDA8P30-1T2 TVS Diode
        STMicroelectronics' ESDA8P30-1T2 unidirectional, single-line TVS diode provides USB VBUS, power supply, and battery protection.
      • CLOUD-ST25TA02KB Evaluation Board
        STMicroelectronics' CLOUD-ST25TA02KB evaluation board for the ST25TA02KB-P device can be configured for various uses such as indicating field detection.
      Top