SI2312DS-T1-E3

SI2312DS-T1-E3
Mfr. #:
SI2312DS-T1-E3
제조사:
Vishay Intertechnologies
설명:
MOSFET, FULL REEL, Transistor Polarity:N Channel, Continuous Drain Current Id:4.9A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.033ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SI2312DS-T1-E3 데이터 시트
배달:
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제품 속성
속성 값
Tags
SI2312DS-T, SI2312D, SI2312, SI231, SI23, SI2
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET; N-Channel; 0.027 Ohms (Typ.) @ 4.5 V, 0.042 Ohms (Typ.) @ 1.8 V; 3.77 A
*** Americas
MOSFET N-CH VDS20V VGS 8V ID4.9A
***nell
MOSFET, N, TO-236; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:4.9A; On State Resistance:0.033ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.65V; Case Style:TO-236; Termination Type:SMD
부분 # 제조 설명 재고 가격
SI2312DS-T1-E3
DISTI # 06J7575
Vishay IntertechnologiesMOSFET, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:4.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.033ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:650mV,Power Dissipation Pd:750mW RoHS Compliant: Yes0
    SI2312DS-T1-E3
    DISTI # 781-SI2312DS-E3
    Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2312BDS-E3
    RoHS: Compliant
    0
      SI2312DS-T1-E3Vishay Intertechnologies 3
        영상 부분 # 설명
        SI2312DS

        Mfr.#: SI2312DS

        OMO.#: OMO-SI2312DS-1190

        신규 및 오리지널
        SI2312DS-T1

        Mfr.#: SI2312DS-T1

        OMO.#: OMO-SI2312DS-T1-1190

        MOSFET RECOMMENDED ALT 781-SI2312BDS-E3
        SI2312DS-T1-E3

        Mfr.#: SI2312DS-T1-E3

        OMO.#: OMO-SI2312DS-T1-E3-1190

        MOSFET, FULL REEL, Transistor Polarity:N Channel, Continuous Drain Current Id:4.9A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.033ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage
        SI2312DS-T1-GE3

        Mfr.#: SI2312DS-T1-GE3

        OMO.#: OMO-SI2312DS-T1-GE3-1190

        신규 및 오리지널
        SI2312DS-T1/C2T0D

        Mfr.#: SI2312DS-T1/C2T0D

        OMO.#: OMO-SI2312DS-T1-C2T0D-1190

        신규 및 오리지널
        유효성
        재고:
        Available
        주문 시:
        4000
        수량 입력:
        SI2312DS-T1-E3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
        참고 가격(USD)
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        내선 가격
        1
        US$0.00
        US$0.00
        10
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        100
        US$0.00
        US$0.00
        500
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        US$0.00
        1000
        US$0.00
        US$0.00
        2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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