 | |  | |
| PartNumber | SI2312BDS-T1-E3 | SI2312-TP | SI2312A-TP |
| Description | MOSFET N-Channel 20V 3.9A | MOSFET N-Channel MOSFET, SOT-23 package | MOSFET N-Ch Enh FET 20Vds 5.0A 8Vgs 0.35W |
| Manufacturer | Vishay | Micro Commercial Components (MCC) | Micro Commercial Components (MCC) |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | 20 V |
| Id Continuous Drain Current | 5 A | 5 A | 5 A |
| Rds On Drain Source Resistance | 31 mOhms | 31.8 mOhms | 25 mOhms |
| Vgs th Gate Source Threshold Voltage | 450 mV | 450 mV | 0.5 V |
| Vgs Gate Source Voltage | 4.5 V | 8 V | 4.5 V |
| Qg Gate Charge | 12 nC | - | 4 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 1.25 W | 350 mW | 0.35 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 1.45 mm | - | - |
| Length | 2.9 mm | - | - |
| Series | SI2 | TrenchFET | N-Ch Polarity |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N- Channel |
| Width | 1.6 mm | - | - |
| Brand | Vishay / Siliconix | Micro Commercial Components (MCC) | Micro Commercial Components (MCC) |
| Forward Transconductance Min | 30 S | 6 S | 6 S |
| Fall Time | 10 ns | 12 ns | 12 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 30 ns | 20 ns | 20 ns |
| Factory Pack Quantity | 3000 | 3000 | 30000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 35 ns | - | 32 ns |
| Typical Turn On Delay Time | 9 ns | - | 10 ns |
| Part # Aliases | SI2312BDS-E3 | - | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI2312BDS-T1-E3 | MOSFET N-Channel 20V 3.9A | |
| SI2312CDS-T1-GE3 | MOSFET 20V Vds 8V Vgs SOT-23 | ||
| SI2312BDS-T1-GE3 | MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V | ||
Micro Commercial Components (MCC) |
SI2312-TP | MOSFET N-Channel MOSFET, SOT-23 package | |
| SI2312A-TP | MOSFET N-Ch Enh FET 20Vds 5.0A 8Vgs 0.35W | ||
| SI2312 | 신규 및 오리지널 | ||
| SI2312-DS-T1/C2T0D | 신규 및 오리지널 | ||
| SI2312BD | 신규 및 오리지널 | ||
| SI2312BDS | 신규 및 오리지널 | ||
| SI2312CDS | 신규 및 오리지널 | ||
| SI2312CDS-T1-E3 | 신규 및 오리지널 | ||
| SI2312CDS-T1-GE3(P5) | 신규 및 오리지널 | ||
| SI2312DS | 신규 및 오리지널 | ||
| SI2312DS-T1 | MOSFET RECOMMENDED ALT 781-SI2312BDS-E3 | ||
| SI2312DS-T1-E3 | MOSFET, FULL REEL, Transistor Polarity:N Channel, Continuous Drain Current Id:4.9A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.033ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage | ||
| SI2312DS-T1-GE3 | 신규 및 오리지널 | ||
| SI2312DS-T1/C2T0D | 신규 및 오리지널 | ||
| SI2312BDS-T1-E3-CUT TAPE | 신규 및 오리지널 | ||
| SI2312BDS-T1-GE3-CUT TAPE | 신규 및 오리지널 | ||
| SI2312CDS-T1-GE3-CUT TAPE | 신규 및 오리지널 | ||
Vishay |
SI2312BDS-T1-E3 | MOSFET N-CH 20V 3.9A SOT23-3 | |
| SI2312BDS-T1-GE3 | MOSFET N-CH 20V 3.9A SOT23-3 | ||
| SI2312CDS-T1-GE3 | MOSFET N-CH 20V 6A SOT-23 |