MRF6V2150NR1

Mfr. #:: MRF6V2150NR1
제조사:: NXP / Freescale
설명:: RF MOSFET Transistors VHV6 150W
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: MRF6V2150NR1 데이터 시트
배달:: DHL FedEx Ups TNT EMS
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ECAD Model:
추가 정보:: MRF6V2150NR1 추가 정보

제품 속성
속성 값

제조사:: NXP

제품 카테고리:: RF MOSFET 트랜지스터

RoHS:: E

트랜지스터 극성:: N-채널

기술:: 시

Vds - 드레인 소스 항복 전압:: 110 V

얻다:: 25 dB

출력 파워:: 150 W

최소 작동 온도:: - 65 C

최대 작동 온도:: + 150 C

장착 스타일:: SMD/SMT

패키지/케이스:: TO-270-4

포장:: 릴

구성:: 단일 이중 드레인 이중 게이트

키:: 2.64 mm

길이:: 17.58 mm

동작 주파수:: 220 MHz

시리즈:: MRF6V2150N

유형:: RF 전력 MOSFET

너비:: 9.07 mm

상표:: NXP / 프리스케일

채널 모드:: 상승

습기에 민감한:: 네

상품 유형:: RF MOSFET 트랜지스터

공장 팩 수량:: 500

하위 카테고리:: MOSFET

Vgs - 게이트 소스 전압:: - 0.5 V, 12 V

Vgs th - 게이트 소스 임계 전압:: 1.62 V

부품 번호 별칭:: 935316842528

단위 무게:: 0.058073 oz

Tags: MRF6V2150N, MRF6V21, MRF6V2, MRF6V, MRF6, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
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Step2:
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Step3:
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MRF6V2150NR1 평가 및 리뷰

G***r

Packing is good. The parcel came very quickly

2019-01-10

C***t

Received. Thank you reseller.

2019-06-22

MRF6V2150NR1 설명

***W: RF Power Transistor,10 to 450 MHz, 150 W, Typ Gain in dB is 25 @ 220 MHz, 50 V, LDMOS, SOT1736

*** Semiconductors SCT: Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V, FM4F

*** Stop Electro: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270

***nell: RF FET, 110V, 450MHZ-10MHZ, TO-272WB; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 450MHz; Operating Frequency Max: 10MHz; RF Transistor Case: TO-270WB; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: MRF6V2150N Series; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.62V; Package/Case:TO-272 ;RoHS Compliant: Yes

***escale Semiconductor: Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V

***et: Power LDMOS Transistor N-Channel 110V 5-Pin TO-270 WB EP T/R

***ical: Trans RF MOSFET N-CH 110V 5-Pin TO-270 W T/R

***or: RF ULTRA HIGH FREQUENCY BAND, N-

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.63V; Package/Case:4-TO-270 ;RoHS Compliant: Yes

***W: RF Power Transistor,10 to 450 MHz, 10 W, Typ Gain in dB is 23.9 @ 220 MHz, 50 V, LDMOS, SOT1732

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F

***nell: TRANSISTOR, RF, 110V, TO-270-2; Drain Source Voltage Vds: 110VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F

***et: Transistor RF FET N-CH 110V 10MHz to 450MHz 2-Pin TO-272 T/R

*** Electronic Components: RF MOSFET Transistors VHV6 10W TO272-2N

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:50µA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.68V; Package/Case:TO-272 ;RoHS Compliant: Yes

***(Formerly Allied Electronics): IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223

***eco: Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3

*** Source Electronics: Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223

***nsix Microsemi: Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***hard Electronics: Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No

***ment14 APAC: MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***ical: Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R

***ment14 APAC: MOSFET, N-CH, 100V, 4.3A, TO-252AA

*** Services: CoC and 2-years warranty / RFQ for pricing

***S: French Electronic Distributor since 1988

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: No

MRF6V2150NR1 추가 정보

MRF6Vx Lateral N-Ch Broadband RF Power MOSFETs: NXP's MRF6Vx Lateral N-Channel Broadband RF Power MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. They can be used single-ended or in a push-pull configuration and are suitable for linear applications with appropriate biasing. These RF MOSFETs are capable of handling a load mismatch of 65:1 VSWR, a 50 VDC, 230 MHz at all phase angles.Learn More

Market price

부분 #	제조	설명	재고	가격
MRF6V2150NR1 DISTI # MRF6V2150NR1CT-ND	NXP Semiconductors	FET RF 110V 220MHZ TO-270-4 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	884In Stock	100:$52.5772 10:$58.6290 1:$62.4100
MRF6V2150NR1 DISTI # MRF6V2150NR1DKR-ND	NXP Semiconductors	FET RF 110V 220MHZ TO-270-4 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	884In Stock	100:$52.5772 10:$58.6290 1:$62.4100
MRF6V2150NR1 DISTI # MRF6V2150NR1TR-ND	NXP Semiconductors	FET RF 110V 220MHZ TO-270-4 RoHS: Compliant Min Qty: 500 Container: Tape & Reel (TR)	500In Stock	500:$48.8424
MRF6V2150NR1 DISTI # MRF6V2150NR1	Avnet, Inc.	Trans MOSFET N-CH 110V 5-Pin TO-270 WB EP T/R - Tape and Reel (Alt: MRF6V2150NR1) RoHS: Compliant Min Qty: 500 Container: Reel	Americas - 0	500:$53.4900 1000:$51.3900 2000:$49.3900 3000:$47.5900 5000:$46.6900
MRF6V2150NR1 DISTI # 47M2188	NXP Semiconductors	RF MOSFET, N CHANNEL, 110V, TO-270, FULL REEL,Drain Source Voltage Vds:110V,Continuous Drain Current Id:2.5mA,Power Dissipation Pd:150W,Operating Frequency Min:10MHz,Operating Frequency Max:450MHz,RF Transistor Case:TO-272 RoHS Compliant: Yes	0	1:$73.4500
MRF6V2150NR1 DISTI # 61AC0770	NXP Semiconductors	RF FET, 110V, 450MHZ-10MHZ, TO-272WB,Drain Source Voltage Vds:110V,Continuous Drain Current Id:-,Power Dissipation Pd:-,Operating Frequency Min:450MHz,Operating Frequency Max:10MHz,RF Transistor Case:TO-270WB,No. of RoHS Compliant: Yes	386	1:$60.5200 10:$57.5000 25:$55.0900 50:$53.0700 100:$51.0500 250:$48.8500
MRF6V2150NR1	Freescale Semiconductor	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270 RoHS: Compliant	1	1000:$48.3200 500:$50.8600 100:$52.9500 25:$55.2200 1:$59.4700
MRF6V2150NR1 DISTI # 841-MRF6V2150NR1	NXP Semiconductors	RF MOSFET Transistors VHV6 150W RoHS: Compliant	102	1:$60.5200 5:$58.7600 10:$57.5000 25:$55.0900 100:$51.0500 250:$48.8500 500:$47.3800
MRF6V2150NR1 DISTI # MRF6V2150NR1	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	0	1:$61.4000 10:$56.7500 25:$55.0900
MRF6V2150NR1 DISTI # 2890604	NXP Semiconductors	RF FET, 110V, 450MHZ-10MHZ, TO-272WB RoHS: Compliant	386	1:$99.4800 10:$93.4500 100:$83.8100
MRF6V2150NR1 DISTI # 2890604	NXP Semiconductors	RF FET, 110V, 450MHZ-10MHZ, TO-272WB RoHS: Compliant	386	1:£45.7800 5:£44.4600 10:£41.6800 50:£36.9500

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유효성

재고:: 437
주문 시:: 2420
수량 입력:

MRF6V2150NR1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$60.52~~; ~~US$60.52~~

5: ~~US$58.76~~; ~~US$293.80~~

10: ~~US$57.50~~; ~~US$575.00~~

25: ~~US$55.09~~; ~~US$1 377.25~~

100: ~~US$51.05~~; ~~US$5 105.00~~

250: ~~US$48.85~~; ~~US$12 212.50~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

MRF6V2150N 5
MRF6V21 6
MRF6V2 17
MRF6V 92
MRF6 332
MRF 2307

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MRF6V2150NR1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

G***r

C***t

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes