CGHV96050F2

Mfr. #:: CGHV96050F2
제조사:: N/A
설명:: RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: CGHV96050F2 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: CGHV96050F2 추가 정보

제품 속성
속성 값

제조사:: 코르보

제품 카테고리:: RF JFET 트랜지스터

RoHS:: Y

기술:: GaN SiC

Vds - 드레인 소스 항복 전압:: 32 V

Vgs - 게이트 소스 항복 전압:: 100 V

Pd - 전력 손실:: 45 W

장착 스타일:: SMD/SMT

포장:: 쟁반

구성:: 하나의

키:: 4.064 mm

길이:: 9.652 mm

너비:: 5.842 mm

상표:: 코르보

게이트 소스 차단 전압:: - 2.9 V

습기에 민감한:: 네

상품 유형:: RF JFET 트랜지스터

공장 팩 수량:: 50

하위 카테고리:: 트랜지스터

부품 번호 별칭:: 1092444

Tags: CGHV960, CGHV9, CGHV, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGHV96050F2 설명

***i-Key: FET RF 100V 9.6GHZ 440210

CGHV96050F2 추가 정보

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

X-Band GaN HEMTs & MMICs: Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More

Market price

부분 #	제조	설명	재고	가격
CGHV96050F2 DISTI # CGHV96050F2-ND	Wolfspeed	RF MOSFET HEMT 40V 440210 RoHS: Compliant Min Qty: 1 Container: Tray	98In Stock	1:$458.6800
CGHV96050F2-TB DISTI # CGHV96050F2-TB-ND	Wolfspeed	TEST FIXTURE FOR CGHV96050F2 RoHS: Compliant Min Qty: 1 Container: Bulk	3In Stock	1:$550.0000
CGHV96050F2 DISTI # 941-CGHV96050F2	Cree, Inc.	RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt RoHS: Compliant	5	1:$458.6800
CGHV96050F2-TB DISTI # 941-CGHV96050F2-TB	Cree, Inc.	RF Development Tools Test Board without GaN HEMT RoHS: Not compliant	2	1:$550.0000
CGHV96050F2-TB DISTI # CGHV96050F2-TB	Wolfspeed	RF TRANSISTOR TEST FIXTURE RoHS: Compliant	2	2:$550.0000

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