OMO ElectronicOMO Electronic
Expand menu
0 카트

SCT2160KEC

SCT2160KEC
Mfr. #:
SCT2160KEC
제조사:
Rohm Semiconductor
설명:
MOSFET 1200V20A160mOhm Silicon Carbide SiC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SCT2160KEC 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
SCT2160KEC 추가 정보
제품 속성
속성 값
제조사:
로옴 반도체
제품 카테고리:
MOSFET
RoHS:
Y
기술:
SiC
장착 스타일:
구멍을 통해
패키지/케이스:
TO-247-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
1200 V
Id - 연속 드레인 전류:
22 A
Rds On - 드레인 소스 저항:
160 mOhms
Vgs th - 게이트 소스 임계 전압:
1.6 V
Vgs - 게이트 소스 전압:
- 6 V, 22 V
Qg - 게이트 차지:
62 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
Pd - 전력 손실:
165 W
구성:
하나의
채널 모드:
상승
포장:
튜브
시리즈:
SCT2x
트랜지스터 유형:
1 N-Channel Power MOSFET
상표:
로옴 반도체
순방향 트랜스컨덕턴스 - 최소:
2.4 S
가을 시간:
27 ns
상품 유형:
MOSFET
상승 시간:
25 ns
공장 팩 수량:
360
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
67 ns
일반적인 켜기 지연 시간:
23 ns
부품 번호 별칭:
SCT2160KE
단위 무게:
1.340411 oz
Tags
SCT2160, SCT216, SCT21, SCT2, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
1200 V 160 mOhm 20 A Surface Flange Mount 2G SiC MosFet - TO-247-3
***Components
SiC N-Channel MOSFET, 22 A, 1200 V, 3-Pin TO-247 ROHM SCT2160KEC
***ical
Trans MOSFET N-CH SiC 1.2KV 22A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans SiC MOSFET N-CH 1200V 22A 3-Pin TO-247 Tube
***i-Key
MOSFET N-CH 1200V 22A TO-247
***ronik
SiC-N 1200V 22A 160mOhm TO247-3
***
FET: 1200V, 20A, 160MOHM, TO24
***ark
Mosfet, N Channel, 1.2Kv, 22A, 0R16, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.16Ohm; Rds(On) Test Voltage Vgs:18V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N CH, 1.2KV, 22A, 0R16, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:18V; Threshold Voltage Vgs:4V; Power Dissipation Pd:165W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C
***nell
MOSFET, N CH, 1.2KV, 22A, 0R16, TO-247-3; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:22A; Napięcie drenu / źródła Vds:1.2kV; Rezystancja przewodzenia Rds(on):0.16ohm; Napięcie Vgs pomiaru Rds(on):18V; Napięcie progowe Vgs:4V; Straty mocy Pd:165W; Rodzaj obudowy tranzystora:TO-247; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:175°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (15-Jan-2018); Temperatura robocza, min.:-55°C
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
Industrial Product Solutions
ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discretes to ICs and modules, providing total solutions at the system level. The Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over 10 years) creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.
Electronic Vehicle (EV) Solutions
ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to contribute to efficiency and improved performance in of state-of-the-art Electronic Vehicles (EV). ROHM offers products optimized for a variety of solutions, with focus on Dedicated EV Blocks, such as the Main Inverter, DC-DC Converter, On-board Charger, and Electric Compressor.
부분 # 제조 설명 재고 가격
SCT2160KEC
DISTI # 30612591		ROHM SemiconductorSCT2160KEC
RoHS: Compliant		2
  • 2:$15.0450
SCT2160KEC
DISTI # SCT2160KEC-ND		ROHM SemiconductorMOSFET N-CH 1200V 22A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 250:$11.2871
  • 100:$12.3794
  • 25:$13.4716
  • 10:$14.5640
  • 1:$16.0200
SCT2160KEC
DISTI # C1S625901535563		ROHM SemiconductorMOSFETs
RoHS: Compliant		30
  • 26:$27.6000
  • 6:$29.7000
  • 2:$31.3000
SCT2160KEC
DISTI # C1S625901135062		ROHM SemiconductorMOSFETs
RoHS: Compliant		2
  • 1:$11.8000
SCT2160KEC
DISTI # SCT2160KEC		ROHM SemiconductorTrans SiC MOSFET N-CH 1200V 22A 3-Pin TO-247 Tube - Rail/Tube (Alt: SCT2160KEC)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 0
  • 1:$10.3900
  • 10:$10.1900
  • 25:$9.9900
  • 50:$9.7900
  • 100:$9.1900
  • 500:$8.6900
  • 1000:$8.3900
SCT2160KEC
DISTI # 06X0711		ROHM SemiconductorMOSFET, N CHANNEL, 1.2KV, 22A, 0R16, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:22A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:4V RoHS Compliant: Yes1026
  • 1:$13.9000
  • 10:$12.7800
  • 25:$12.2500
  • 50:$11.6500
  • 100:$11.0400
SCT2160KEC
DISTI # 755-SCT2160KEC		ROHM SemiconductorMOSFET 1200V20A160mOhm Silicon Carbide SiC
RoHS: Compliant		0
  • 1:$13.9000
  • 10:$12.7800
  • 25:$12.2500
  • 100:$11.0400
SCT2160KEC
DISTI # 1246853		ROHM SemiconductorSIC MOSFET N-CHANNEL 1200V 22A TO247, EA1
  • 1:£12.1900
  • 5:£10.9700
  • 10:£9.9800
  • 25:£9.1500
  • 50:£8.6900
SCT2160KEC
DISTI # 2345466		ROHM SemiconductorMOSFET, N CH, 1.2KV, 22A, 0R16, TO-247-3
RoHS: Compliant		746
  • 1:£11.5400
  • 5:£11.0500
  • 10:£9.7200
  • 50:£9.4700
  • 100:£9.2100
SCT2160KECROHM SemiconductorMOSFET 1200V20A160mOhm Silicon Carbide SiC
RoHS: Compliant		Americas -
    SCT2160KEC
    DISTI # 2345466    		ROHM SemiconductorMOSFET, N CH, 1.2KV, 22A, 0R16, TO-247-3
    RoHS: Compliant    		720
    • 1:$22.0000
    • 10:$20.2300
    • 25:$19.3900
    • 100:$19.1100
    영상 부분 # 설명
    STGW30M65DF2

    Mfr.#: STGW30M65DF2

    OMO.#: OMO-STGW30M65DF2

    		 IGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low loss
    SCT10N120

    Mfr.#: SCT10N120

    OMO.#: OMO-SCT10N120

    		 MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
    IPP039N10N5AKSA1

    Mfr.#: IPP039N10N5AKSA1

    OMO.#: OMO-IPP039N10N5AKSA1

    		 MOSFET DIFFERENTIATED MOSFETS
    LSIC1MO120E0160

    Mfr.#: LSIC1MO120E0160

    OMO.#: OMO-LSIC1MO120E0160

    		 MOSFET 1200 V 160 mOhm SiC Mosfet
    C2M0160120D

    Mfr.#: C2M0160120D

    OMO.#: OMO-C2M0160120D

    		 MOSFET SIC MOSFET 1200V RDS ON 160 mOhm
    V20PWM60-M3/I

    Mfr.#: V20PWM60-M3/I

    OMO.#: OMO-V20PWM60-M3-I

    		 Schottky Diodes & Rectifiers Single Die TO-252AE 20A If(AV)
    ATMEGA4808-AFR

    Mfr.#: ATMEGA4808-AFR

    OMO.#: OMO-ATMEGA4808-AFR

    		 8-bit Microcontrollers - MCU 20MHz, 48KB, TQFP32, Ind 125C, Green, T&R
    LSIC1MO120E0080

    Mfr.#: LSIC1MO120E0080

    OMO.#: OMO-LSIC1MO120E0080

    		 MOSFET 1200V 80mOhm SiC MOSFET
    ATMEGA4808-AFR

    Mfr.#: ATMEGA4808-AFR

    OMO.#: OMO-ATMEGA4808-AFR-MICROCHIP-TECHNOLOGY

    		 20MHz, 48KB, TQFP32, Ind 125C, Green, T&R
    LSIC1MO120E0160

    Mfr.#: LSIC1MO120E0160

    OMO.#: OMO-LSIC1MO120E0160-LITTELFUSE

    		 1200V/160mohm SiC MOSFET TO-247-3L
    유효성
    재고:
    318
    주문 시:
    2301
    수량 입력:
    SCT2160KEC의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$13.89
    US$13.89
    10
    US$12.77
    US$127.70
    25
    US$12.24
    US$306.00
    100
    US$11.10
    US$1 110.00
    250
    US$11.03
    US$2 757.50
    시작
    최신 제품
    More Newest Products
    Top