SI9410BDY-T1-GE3

SI9410BDY-T1-GE3
Mfr. #:
SI9410BDY-T1-GE3
제조사:
Vishay
설명:
IGBT Transistors MOSFET 30V 8.1A 2.5W 24mohm @ 10V
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SI9410BDY-T1-GE3 데이터 시트
배달:
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지불:
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ECAD Model:
제품 속성
속성 값
Tags
SI9410BDY-T, SI9410BD, SI9410B, SI9410, SI941, SI94, SI9
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC N T/R
***i-Key
MOSFET N-CH 30V 6.2A 8SOIC
***ukat
N-Ch 30V 8,1A 2,5W 0,024R SO8
***ment14 APAC
MOSFET, N CH, 30V, 8.1A , SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:6.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited
부분 # 제조 설명 재고 가격
SI9410BDY-T1-GE3
DISTI # SI9410BDY-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 30V 6.2A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    SI9410BDY-T1-GE3
    DISTI # 781-SI9410BDY-GE3
    Vishay IntertechnologiesMOSFET 30V 8.1A 2.5W 24mohm @ 10V
    RoHS: Compliant
    0
      영상 부분 # 설명
      SI9410BDY-T1-E3

      Mfr.#: SI9410BDY-T1-E3

      OMO.#: OMO-SI9410BDY-T1-E3

      MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
      SI9410BDY-T1-GE3

      Mfr.#: SI9410BDY-T1-GE3

      OMO.#: OMO-SI9410BDY-T1-GE3

      MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
      SI9410BDY-T1-GE3

      Mfr.#: SI9410BDY-T1-GE3

      OMO.#: OMO-SI9410BDY-T1-GE3-VISHAY

      IGBT Transistors MOSFET 30V 8.1A 2.5W 24mohm @ 10V
      SI9410BDY-T1-E3

      Mfr.#: SI9410BDY-T1-E3

      OMO.#: OMO-SI9410BDY-T1-E3-VISHAY

      IGBT Transistors MOSFET 30V 8.1A 0.024Ohm
      SI9410BDY

      Mfr.#: SI9410BDY

      OMO.#: OMO-SI9410BDY-1190

      POWER FIELD-EFFECT TRANSISTOR, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
      SI9410BDY-T1

      Mfr.#: SI9410BDY-T1

      OMO.#: OMO-SI9410BDY-T1-1190

      MOSFET RECOMMENDED ALT 781-SI4800BDY-E3
      SI9410BDY-T1-E3.

      Mfr.#: SI9410BDY-T1-E3.

      OMO.#: OMO-SI9410BDY-T1-E3--1190

      신규 및 오리지널
      유효성
      재고:
      Available
      주문 시:
      2000
      수량 입력:
      SI9410BDY-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$0.00
      US$0.00
      10
      US$0.00
      US$0.00
      100
      US$0.00
      US$0.00
      500
      US$0.00
      US$0.00
      1000
      US$0.00
      US$0.00
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