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IRFH5207TRPBF

IRFH5207TRPBF
Mfr. #:
IRFH5207TRPBF
제조사:
Infineon Technologies
설명:
MOSFET N-CH 75V 13A 8-PQFN
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRFH5207TRPBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFH5207TRPBF DatasheetIRFH5207TRPBF Datasheet (P4-P6)IRFH5207TRPBF Datasheet (P7-P9)
ECAD Model:
제품 속성
속성 값
제조사
IR
제품 카테고리
FET - 단일
포장
릴
장착 스타일
SMD/SMT
패키지 케이스
PQFN-8
기술
시
채널 수
1 Channel
구성
싱글 쿼드 드레인 트리플 소스
트랜지스터형
1 N-Channel
Pd 전력 손실
3.6 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
가을철
7.1 ns
상승 시간
12 ns
Vgs 게이트 소스 전압
20 V
Id-연속-드레인-전류
71 A
Vds-드레인-소스-고장-전압
75 V
Vgs-th-Gate-Source-Threshold-Voltage
4 V
Rds-On-Drain-Source-Resistance
9.6 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
20 ns
일반 켜기 지연 시간
7.2 ns
Qg-Gate-Charge
40 nC
순방향 트랜스컨덕턴스-최소
51 S
채널 모드
상승
Tags
IRFH5207, IRFH520, IRFH52, IRFH5, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:75V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***trelec
MOSFET Operating temperature: -55...+150 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 100 W
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:89A; Drain Source Voltage Vds:60V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes
***ure Electronics
Single N-Channel 40 V 3.3 mOhm 65 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ark
T&R / MOSFET, 40V, 85A, 3.3 mOhm, 65 nC Qg, PQFN56
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a Lead Free PQFN 5mm x 6mm package, PG-TDSON-8, RoHS
***Yang
Trans MOSFET N-CH 40V 117A 8-Pin PQFN T/R - Tape and Reel
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Push-Pull
***nell
MOSFET, N-CH, 40V, 85A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PQFN; No. of Pins:5; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 117 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 3.3 / Gate-Source Voltage V = 20 / Fall Time ns = 26 / Rise Time ns = 37 / Turn-OFF Delay Time ns = 33 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 78
***ure Electronics
Single N-Channel 100 V 12.4 mOhm 48 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS
***Yang
Trans MOSFET N-CH 10V 11A 8-Pin QFN T/R - Tape and Reel
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes
***nell
MOSFET, N-CH, 100V, 63A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 63A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0103ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 114W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 12.4 / Gate-Source Voltage V = 20 / Fall Time ns = 6.4 / Rise Time ns = 9.6 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 7.8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 114
***ernational Rectifier
-30V Single P-Channel HEXFET Power MOSFET in a PQFN 3mm x 3mm package
***(Formerly Allied Electronics)
MOSFET, P-CHANNEL, -30V, -11A, 14.6 MOHM, 25VGS, PQFN3X3
***ment14 APAC
MOSFET,P CH,DIODE,30V,11A,PQFN33; Transistor Polarity:P Channel; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:-20V; Power Dissipation Pd:2.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:-11A; Power Dissipation Pd:2.8W; Voltage Vgs Max:-25V
부분 # 제조 설명 재고 가격
IRFH5207TRPBF
DISTI # IRFH5207TRPBF-ND		Infineon Technologies AGMOSFET N-CH 75V 13A 8-PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRFH5207TRPBF
    DISTI # 70019276    		Infineon Technologies AGMOSFET 75V,Gen 10.7,10.11 mOhm max,43.5 nC Qg
    RoHS: Compliant    		0
    • 4000:$0.7220
    • 8000:$0.7080
    • 20000:$0.6860
    IRFH5207TRPBF
    DISTI # 942-IRFH5207TRPBF    		Infineon Technologies AGMOSFET 75V 1 N-CH HEXFET 9.6mOhms 39nC
    RoHS: Compliant    		0
      영상 부분 # 설명
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      OMO.#: OMO-IRFH5207TRPBF-INFINEON-TECHNOLOGIES

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      유효성
      재고:
      Available
      주문 시:
      1500
      수량 입력:
      IRFH5207TRPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$1.03
      US$1.03
      10
      US$0.98
      US$9.78
      100
      US$0.93
      US$92.61
      500
      US$0.87
      US$437.35
      1000
      US$0.82
      US$823.20
      2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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