IRFH5207TRPBF

Mfr. #:: IRFH5207TRPBF
제조사:: Infineon Technologies
설명:: MOSFET N-CH 75V 13A 8-PQFN
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRFH5207TRPBF 데이터 시트
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HTML Datasheet:: IRFH5207TRPBF Datasheet IRFH5207TRPBF Datasheet (P4-P6)IRFH5207TRPBF Datasheet (P7-P9)
ECAD Model:

제품 속성
속성 값

제조사: IR

제품 카테고리: FET - 단일

포장: 릴

장착 스타일: SMD/SMT

패키지 케이스: PQFN-8

기술: 시

채널 수: 1 Channel

구성: 싱글 쿼드 드레인 트리플 소스

트랜지스터형: 1 N-Channel

Pd 전력 손실: 3.6 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 7.1 ns

상승 시간: 12 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 71 A

Vds-드레인-소스-고장-전압: 75 V

Vgs-th-Gate-Source-Threshold-Voltage: 4 V

Rds-On-Drain-Source-Resistance: 9.6 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 20 ns

일반 켜기 지연 시간: 7.2 ns

Qg-Gate-Charge: 40 nC

순방향 트랜스컨덕턴스-최소: 51 S

채널 모드: 상승

Tags: IRFH5207, IRFH520, IRFH52, IRFH5, IRFH, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFH5207TRPBF 설명

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:75V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

***trelec: MOSFET Operating temperature: -55...+150 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 100 W

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:89A; Drain Source Voltage Vds:60V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes

***ure Electronics: Single N-Channel 40 V 3.3 mOhm 65 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ark: T&R / MOSFET, 40V, 85A, 3.3 mOhm, 65 nC Qg, PQFN56

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a Lead Free PQFN 5mm x 6mm package, PG-TDSON-8, RoHS

***Yang: Trans MOSFET N-CH 40V 117A 8-Pin PQFN T/R - Tape and Reel

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Push-Pull

***nell: MOSFET, N-CH, 40V, 85A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PQFN; No. of Pins:5; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 117 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 3.3 / Gate-Source Voltage V = 20 / Fall Time ns = 26 / Rise Time ns = 37 / Turn-OFF Delay Time ns = 33 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 78

***ure Electronics: Single N-Channel 100 V 12.4 mOhm 48 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS

***Yang: Trans MOSFET N-CH 10V 11A 8-Pin QFN T/R - Tape and Reel

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes

***nell: MOSFET, N-CH, 100V, 63A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 63A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0103ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 114W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 12.4 / Gate-Source Voltage V = 20 / Fall Time ns = 6.4 / Rise Time ns = 9.6 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 7.8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 114

***ernational Rectifier: -30V Single P-Channel HEXFET Power MOSFET in a PQFN 3mm x 3mm package

***(Formerly Allied Electronics): MOSFET, P-CHANNEL, -30V, -11A, 14.6 MOHM, 25VGS, PQFN3X3

***ment14 APAC: MOSFET,P CH,DIODE,30V,11A,PQFN33; Transistor Polarity:P Channel; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:-20V; Power Dissipation Pd:2.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:-11A; Power Dissipation Pd:2.8W; Voltage Vgs Max:-25V

Market price

부분 #	제조	설명	재고	가격
IRFH5207TRPBF DISTI # IRFH5207TRPBF-ND	Infineon Technologies AG	MOSFET N-CH 75V 13A 8-PQFN RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Limited Supply - Call
IRFH5207TRPBF DISTI # 70019276	Infineon Technologies AG	MOSFET 75V,Gen 10.7,10.11 mOhm max,43.5 nC Qg RoHS: Compliant	0	4000:$0.7220 8000:$0.7080 20000:$0.6860
IRFH5207TRPBF DISTI # 942-IRFH5207TRPBF	Infineon Technologies AG	MOSFET 75V 1 N-CH HEXFET 9.6mOhms 39nC RoHS: Compliant	0

관련 상품

영상	부분 #	설명
	Mfr.#: IRFH5250TRPBF OMO.#: OMO-IRFH5250TRPBF	MOSFET 25V 1 N-CH HEXFET 1.15mOhms 52nC
	Mfr.#: IRFH5250DTR2PBF OMO.#: OMO-IRFH5250DTR2PBF	MOSFET MOSFT 25V FETky 100A 1.4mOhm 39nC Qg
	Mfr.#: IRFH5220TR2PBF OMO.#: OMO-IRFH5220TR2PBF	MOSFET MOSFT 200V 20A 100mOhm 20nC Qg
	Mfr.#: IRFH5250DTRPBF. OMO.#: OMO-IRFH5250DTRPBF--1190	TRENCH_MOSFETS , ROHS COMPLIANT: YES
	Mfr.#: IRFH5207TRPBF OMO.#: OMO-IRFH5207TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 75V 13A 8-PQFN
	Mfr.#: IRFH5210PBF OMO.#: OMO-IRFH5210PBF-1190	신규 및 오리지널
	Mfr.#: IRFH5210TRPBF OMO.#: OMO-IRFH5210TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 10A 8-PQFN
	Mfr.#: IRFH5215TR2PBF OMO.#: OMO-IRFH5215TR2PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 150V 5.0A PQFN
	Mfr.#: IRFH5250TRPBF OMO.#: OMO-IRFH5250TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 25V 45A PQFN
	Mfr.#: IRFH5215TRPBF OMO.#: OMO-IRFH5215TRPBF-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET 150V 1 N-CH HEXFET 58mOhms 20nC

유효성

재고:: Available
주문 시:: 1500
수량 입력:

IRFH5207TRPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$1.03~~; ~~US$1.03~~

10: ~~US$0.98~~; ~~US$9.78~~

100: ~~US$0.93~~; ~~US$92.61~~

500: ~~US$0.87~~; ~~US$437.35~~

1000: ~~US$0.82~~; ~~US$823.20~~

시작

IRFH5207 3
IRFH520 9
IRFH52 24
IRFH5 94
IRFH 278
IRF 8615

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IRFH5207TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes