A3T21H360W23SR6 vs A3T21H400W23SR6 vs A3T21H360W23S

 
PartNumberA3T21H360W23SR6A3T21H400W23SR6A3T21H360W23S
DescriptionRF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 56 W Avg., 28 VRF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 71 W Avg., 28 V
ManufacturerNXPNXP-
Product CategoryRF MOSFET TransistorsRF MOSFET Transistors-
RoHSYY-
Transistor PolarityDual N-ChannelDual N-Channel-
TechnologySiSi-
Id Continuous Drain Current2.4 A3.2 A-
Vds Drain Source Breakdown Voltage- 500 mV, 65 V- 500 mV, 65 V-
Gain16.4 dB--
Output Power56 W--
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseACP-1230S-4L2SACP-1230S-4-
PackagingReelReel-
Operating Frequency2110 MHz to 2200 MHz2110 MHz to 2200 MHz-
TypeRF Power MOSFETRF Power MOSFET-
BrandNXP SemiconductorsNXP Semiconductors-
Number of Channels2 Channel2 Channel-
Product TypeRF MOSFET TransistorsRF MOSFET Transistors-
Factory Pack Quantity150150-
SubcategoryMOSFETsMOSFETs-
Vgs Gate Source Voltage- 6 V, 10 V- 6 V, 10 V-
Vgs th Gate Source Threshold Voltage1.4 V0.8 V, 1.4 V-
Part # Aliases935354511128935372908128-
Unit Weight0.212656 oz--
Series-A3T21H400W23-
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