APTGL475A120D3G vs APTGL40H120T1G vs APTGL40X120T3G

 
PartNumberAPTGL475A120D3GAPTGL40H120T1GAPTGL40X120T3G
DescriptionIGBT Modules CC7082IGBT Modules DOR CC8085IGBT Modules DOR CC3132
ManufacturerMicrochipMicrochipMicrochip
Product CategoryIGBT ModulesIGBT ModulesIGBT Modules
RoHSYYY
ProductIGBT Silicon ModulesIGBT Silicon ModulesIGBT Silicon Modules
ConfigurationDualFull Bridge3-Phase
Collector Emitter Voltage VCEO Max1.2 kV1.2 kV1.2 kV
Collector Emitter Saturation Voltage1.8 V1.85 V1.85 V
Continuous Collector Current at 25 C610 A65 A65 A
Gate Emitter Leakage Current400 nA400 nA400 nA
Pd Power Dissipation2.08 kW220 W220 W
Package / CaseD3-11SP1-12SP3-32
Minimum Operating Temperature- 40 C- 40 C- 40 C
Maximum Operating Temperature+ 125 C+ 100 C+ 100 C
PackagingBulkTubeTube
BrandMicrochip / MicrosemiMicrochip / MicrosemiMicrochip / Microsemi
Mounting StyleChassis MountChassis MountChassis Mount
Maximum Gate Emitter Voltage20 V20 V20 V
Product TypeIGBT ModulesIGBT ModulesIGBT Modules
Factory Pack Quantity111
SubcategoryIGBTsIGBTsIGBTs
Unit Weight-2.821917 oz-
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