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CGHV14500F vs CGHV14500-TB vs CGHV14500F/P

 
PartNumberCGHV14500FCGHV14500-TBCGHV14500F/P
DescriptionRF JFET Transistors GaN HEMT 1.2-1.4GHz, 500 WattRF Development Tools Test Board without GaN HEMT
ManufacturerCree, Inc.Cree, Inc.-
Product CategoryRF JFET TransistorsRF Development Tools-
RoHSYN-
Transistor TypeHEMT--
TechnologyGaN--
Gain17.1 dB--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage150 V--
Vgs Gate Source Breakdown Voltage- 10 V to 2 V--
Id Continuous Drain Current36 A--
Output Power510 W--
Maximum Drain Gate Voltage---
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 130 C+ 130 C-
Pd Power Dissipation---
Mounting StyleScrew Mount--
Package / Case440117--
PackagingTubeBulk-
Application---
ConfigurationSingle--
Height---
Length---
Operating Frequency1.2 GHz to 1.4 GHz--
Operating Temperature Range---
ProductGaN HEMTDemonstration Boards-
Width---
BrandWolfspeed / CreeWolfspeed / Cree-
Forward Transconductance Min---
Gate Source Cutoff Voltage---
Class---
Development KitCGHV14500F-TB--
Fall Time---
NF Noise Figure---
P1dB Compression Point---
Product TypeRF JFET TransistorsRF Development Tools-
Rds On Drain Source Resistance---
Rise Time---
Factory Pack Quantity502-
SubcategoryTransistorsDevelopment Tools-
Typical Turn Off Delay Time---
Vgs th Gate Source Threshold Voltage- 3 V--
Type-RF Transistors-
Tool Is For Evaluation Of-CGHV14500F-
Frequency-1.2 GHz to 1.4 GHz-
Operating Supply Voltage---
Description/Function-Demonstration board for CGHV14500F-
Dimensions---
Interface Type---
For Use With-CGHV14500F-
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