IPB065N03LGATMA1 vs IPB065N03L G vs IPB065N06L

 
PartNumberIPB065N03LGATMA1IPB065N03L GIPB065N06L
DescriptionMOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current50 A--
Rds On Drain Source Resistance5.4 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge11 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation56 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height4.4 mm--
Length10 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width9.25 mm--
BrandInfineon Technologies--
Forward Transconductance Min34 S--
Fall Time3.4 ns--
Product TypeMOSFET--
Rise Time4.2 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time21 ns--
Typical Turn On Delay Time5.5 ns--
Part # AliasesG IPB065N03L IPB65N3LGXT SP000254709--
Unit Weight0.139332 oz--
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