IPB065N03LGATMA1

Mfr. #:: IPB065N03LGATMA1
제조사:: Infineon Technologies
설명:: MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IPB065N03LGATMA1 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: TO-263-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 30 V

Id - 연속 드레인 전류:: 50 A

Rds On - 드레인 소스 저항:: 5.4 mOhms

Vgs th - 게이트 소스 임계 전압:: 1 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 11 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 175 C

Pd - 전력 손실:: 56 W

구성:: 하나의

채널 모드:: 상승

상표명:: 옵티모스

포장:: 릴

키:: 4.4 mm

길이:: 10 mm

시리즈:: OptiMOS 3

트랜지스터 유형:: 1 N-Channel

너비:: 9.25 mm

상표:: 인피니언 테크놀로지스

순방향 트랜스컨덕턴스 - 최소:: 34 S

가을 시간:: 3.4 ns

상품 유형:: MOSFET

상승 시간:: 4.2 ns

공장 팩 수량:: 1000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 21 ns

일반적인 켜기 지연 시간:: 5.5 ns

부품 번호 별칭:: G IPB065N03L IPB65N3LGXT SP000254709

단위 무게:: 0.139332 oz

Tags: IPB065N03, IPB065N0, IPB065, IPB06, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB065N03LGATMA1 설명

***ark: MOSFET, N-CH, 30V, 50A, TO-263-3; Transistor Polarity:N Channel; Continuous Drai

***ure Electronics: Single N-Channel 30 V 6.5 mOhm 23 nC OptiMOS Power Mosfet - D2PAK

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO263-3, RoHS

***ment14 APAC: MOSFET, N-CH, 30V, 50A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0054ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:56W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ure Electronics: Single N-Channel 30 V 9.5 mOhm 9.6 nC HEXFET® Power Mosfet - DPAK

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***roFlash: Power Field-Effect Transistor, 56A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

***nell: MOSFET, N, LOGIC, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 56A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0095ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Diss

***ure Electronics: Single N-Channel 30 V 4.5 mOhm 13 nC OptiMOS Power Mosfet - TDSON-8

***ment14 APAC: MOSFET, N-CH, 30V, 63A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Source Voltage Vds:30V; On Resistance

***nell: MOSFET, N-CH, 30V, 63A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 63A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 30W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***emi: PowerTrench® MOSFET, N-Channel, 30V, 58A, 9mΩ

***ark: TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,13A I(D),TO-252AA

***ure Electronics: N-Channel 30 V 58 A 9 mOhm PowerTrench Mosfet TO-252AA

*** Source Electronics: MOSFET N-CH 30V 58A DPAK / Trans MOSFET N-CH 30V 13A 3-Pin(2+Tab) DPAK T/R

***ment14 APAC: MOSFET, N-CH, 30V, 58A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:58A; Source Voltage Vds:30V; On Resistance

***roFlash: Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***nell: MOSFET, N-CH, 30V, 58A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 55W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***(Formerly Allied Electronics): MOSFET; Power; N-Ch; VDSS 30V; RDS(ON) 7.5Milliohms; ID 65A; D-Pak (TO-252AA); PD 75W

***ure Electronics: Single N-Channel 30V 10 mOhm 10 nC HEXFET® Power Mosfet - TO-252AA

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***ment14 APAC: N CHANNEL MOSFET, 30V, 65A, D-PAK; Trans; Transistor Polarity:N Channel; Continuous Drain Current Id:65A;

*** Stop Electro: Power Field-Effect Transistor, 65A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level

***ark: Mosfet Transistor; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:65A; On Resistance Rds(On):0.0075Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pins Rohs Compliant: Yes

***emi: PowerTrench® MOSFET, N-Channel, 30V, 55A, 11.5mΩ

***r Electronics: Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 12.6A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0094ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation P

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***Yang: Transistor MOSFET Array Dual N-CH 30V 43A/75A 8-Pin PQFN T/R - Tape and Reel

***ark: PT7 N 30/20 and PT8 N 30/12 S in Power Stage56 - 8LD, PQFN, NON-JEDEC, 5.0X6.0MM, DUAL DAP

***emi: Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V

*** Stop Electro: Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET™ (Q2) have been designed to provide optimal power efficiency.

***nell: MOSFET, N-CH, 30V, 18A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 2.5W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

Market price

부분 #	제조	설명	재고	가격
IPB065N03LGATMA1 DISTI # V72:2272_06384772	Infineon Technologies AG	Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	159	100:$0.7924 25:$0.9188 10:$1.0209 1:$1.3160
IPB065N03LGATMA1 DISTI # V36:1790_06384772	Infineon Technologies AG	Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0	1000000:$0.4316 500000:$0.4319 100000:$0.4602 10000:$0.5114 1000:$0.5200
IPB065N03LGATMA1 DISTI # IPB065N03LGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 50A TO-263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	11822In Stock	500:$0.7613 100:$0.9216 10:$1.1820 1:$1.3200
IPB065N03LGATMA1 DISTI # IPB065N03LGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 50A TO-263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	11822In Stock	500:$0.7613 100:$0.9216 10:$1.1820 1:$1.3200
IPB065N03LGATMA1 DISTI # IPB065N03LGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 50A TO-263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	11000In Stock	10000:$0.4980 5000:$0.5174 2000:$0.5446 1000:$0.5835
IPB065N03LGATMA1 DISTI # 26195584	Infineon Technologies AG	Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	159	14:$1.3160
IPB065N03LGATMA1 DISTI # SP000254709	Infineon Technologies AG	Trans MOSFET N-CH 30V 50A 3-Pin TO-263 T/R (Alt: SP000254709) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	10000:€0.4619 6000:€0.4919 4000:€0.5409 2000:€0.6059 1000:€0.7769
IPB065N03LGXT DISTI # IPB065N03LGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB065N03LGATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$0.4699 6000:$0.4789 4000:$0.4949 2000:$0.5139 1000:$0.5329
IPB065N03LGATMA1 DISTI # 47W3466	Infineon Technologies AG	MOSFET, N CHANNEL, 30V, 50A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0054ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V RoHS Compliant: Yes	0	500:$0.7110 100:$0.8050 10:$1.0400 1:$1.2200
IPB065N03LGATMA1 DISTI # 726-IPB065N03LGATMA1	Infineon Technologies AG	MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 RoHS: Compliant	2728	1:$1.2100 10:$1.0300 100:$0.7970 500:$0.7040 1000:$0.5560 2000:$0.4930 10000:$0.4750
IPB065N03L G DISTI # 726-IPB065N03LG	Infineon Technologies AG	MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 RoHS: Compliant	1910	1:$1.2100 10:$1.0300 100:$0.7970 500:$0.7040 1000:$0.5560 2000:$0.4930 10000:$0.4750
IPB065N03LGATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 50A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	2000	1000:$0.4200 500:$0.4400 100:$0.4600 25:$0.4800 1:$0.5200
IPB065N03LGATMA1 DISTI # 2212897	Infineon Technologies AG	MOSFET, N-CH, 30V, 50A, TO-263-3 RoHS: Compliant	133	2000:$0.7430 1000:$0.8380 500:$1.0600 100:$1.2000 10:$1.5500 1:$1.8200
IPB065N03LGATMA1 DISTI # 2212897	Infineon Technologies AG	MOSFET, N-CH, 30V, 50A, TO-263-3	533	500:£0.3250 250:£0.3470 100:£0.3690 25:£0.4760 5:£0.5300

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IPB065N03LGATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes