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| PartNumber | IPDD60R125G7XTMA1 | IPDD60R102G7XTMA1 | IPDD60R102G7XTMA1-CUT TAPE |
| Description | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_NEW | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PG-HDSOP-10 | PG-HDSOP-10 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 20 A | 23 A | - |
| Rds On Drain Source Resistance | 125 mOhms | 102 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 27 nC | 34 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 120 W | 139 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 5 ns | 4 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 5 ns | 5 ns | - |
| Factory Pack Quantity | 1700 | 1700 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 60 ns | 60 ns | - |
| Typical Turn On Delay Time | 18 ns | 18 ns | - |
| Part # Aliases | IPDD60R125G7 SP001632876 | IPDD60R102G7 SP001632832 | - |