NTD5865NL-1G vs NTD5865N-1G vs NTD5865N

 
PartNumberNTD5865NL-1GNTD5865N-1GNTD5865N
DescriptionMOSFET Single N-CH 60V 40AMOSFET Single N-CH 60V 38A
ManufacturerON SemiconductorON SemiconductorO
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTThrough Hole-
Package / CaseTO-252-3TO-247-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current40 A38 A-
Rds On Drain Source Resistance16 mOhms14 mOhms-
Vgs th Gate Source Threshold Voltage2 V4 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge29 nC23 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation52 W52 W-
ConfigurationSingleSingle-
Transistor Type1 N-Channel1 N-Channel-
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min15 S6.9 S-
Product TypeMOSFETMOSFET-
Factory Pack Quantity7575-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.139332 oz0.139332 oz-
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