SGP10N60RUFDTU vs SGP10N60RUFD vs SGP10N60RUFD,SGP10N60RUF

 
PartNumberSGP10N60RUFDTUSGP10N60RUFDSGP10N60RUFD,SGP10N60RUF
DescriptionIGBT Transistors Dis Short Circuit Rated IGBT
ManufacturerON SemiconductorFairchild Semiconductor-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-220-3--
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.2 V2.2 V-
Maximum Gate Emitter Voltage20 V+/- 20 V-
Continuous Collector Current at 25 C16 A16 A-
Pd Power Dissipation75 W--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesSGP10N60RUFD--
PackagingTubeTube-
Continuous Collector Current Ic Max16 A16 A-
Height9.4 mm--
Length10.1 mm--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current16 A--
Gate Emitter Leakage Current+/- 100 nA+/- 100 nA-
Product TypeIGBT Transistors--
Factory Pack Quantity1000--
SubcategoryIGBTs--
Part # AliasesSGP10N60RUFDTU_NL--
Unit Weight0.063493 oz0.063493 oz-
Part Aliases-SGP10N60RUFDTU_NL-
Package Case-TO-220-3-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-TO-220-3-
Power Max-75W-
Reverse Recovery Time trr-60ns-
Current Collector Ic Max-16A-
Voltage Collector Emitter Breakdown Max-600V-
IGBT Type---
Current Collector Pulsed Icm-30A-
Vce on Max Vge Ic-2.8V @ 15V, 10A-
Switching Energy-141μJ (on), 215μJ (off)-
Gate Charge-30nC-
Td on off 25°C-15ns/36ns-
Test Condition-300V, 10A, 20 Ohm, 15V-
Pd Power Dissipation-75 W-
Collector Emitter Voltage VCEO Max-600 V-
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