SGP10N60RUFDTU

SGP10N60RUFDTU
Mfr. #:
SGP10N60RUFDTU
제조사:
ON Semiconductor / Fairchild
설명:
IGBT Transistors Dis Short Circuit Rated IGBT
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SGP10N60RUFDTU 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
패키지/케이스:
TO-220-3
장착 스타일:
구멍을 통해
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
600 V
수집기-이미터 포화 전압:
2.2 V
최대 게이트 이미터 전압:
20 V
25C에서 연속 수집기 전류:
16 A
Pd - 전력 손실:
75 W
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
시리즈:
SGP10N60RUFD
포장:
튜브
연속 수집가 현재 IC 최대:
16 A
키:
9.4 mm
길이:
10.1 mm
너비:
4.7 mm
상표:
온세미컨덕터 / 페어차일드
지속적인 수집가 전류:
16 A
게이트-이미터 누설 전류:
+/- 100 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
1000
하위 카테고리:
IGBT
부품 번호 별칭:
SGP10N60RUFDTU_NL
단위 무게:
0.063493 oz
Tags
SGP10N60RUFD, SGP10N60R, SGP10N, SGP10, SGP1, SGP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    M***y
    M***y
    RU

    Ttl for 3.3 volt works, especks are sewn, you can take... delivery latvian-1 star, seller

    2019-04-07
    D***v
    D***v
    RU

    ok.

    2019-07-01
***ark
Transistor,igbt,n-Chan+Diode,600V V(Br)Ces,16A I(C),to-220 Rohs Compliant: Yes
***et Europe
Trans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220 Rail
***r Electronics
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.
***-Wing Technology
Tube Through Hole N-CHANNEL SINGLE IGBT Transistor 2.8V @ 15V 10A 16A 55W 15ns/36ns
***Yang
IGBT 600V 16A 55W TO220F - Bulk
*** Electronic Components
Motor / Motion / Ignition Controllers & Drivers 600V/10A
*** Source Electronics
Trans IGBT Chip N-CH 600V 16A 55000mW 3-Pin(3+Tab) TO-220FP Tube / IGBT 600V 16A 55W TO220F
***ark
Transistor,igbt,n-Chan+Diode,600V V(Br)Ces,16A I(C),to-220Ab(Fp) Rohs Compliant: Yes
***rchild Semiconductor
Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.
***ical
Trans IGBT Chip N-CH 600V 14A 3-Pin(3+Tab) TO-220AB Rail
***ark
RAIL / 600V,14A,UFS SERIES NCH IGBT W/ANTI-PARALLEL HYPERFAST DIODE
***r Electronics
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C at rated current. The IGBT is developmental type TA49190. The diode used in anti-parallel with the IGBT is the RHRD660 (TA49057).The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
***p One Stop Global
Trans IGBT Chip N-CH 600V 17A 45000mW 3-Pin(3+Tab) TO-220 Full-Pak Tube
***ure Electronics
N-Channel 600 V 17 A Flange Mount Ultrafast CoPack IGBT - TO-220FP
***trelec
IGBT Housing type: TO-220 Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.1 V Current release time: 180 ns Power dissipation: 45 W
***ment14 APAC
IGBT, 600V, 17A, TO-220FP; Transistor Type:IGBT; DC Collector Current:17A; Collector Emitter Voltage Vces:1.95V; Power Dissipation Pd:45W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:17A; Current Temperature:25°C; Fall Time Max:180ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Max:45W; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Pulsed Current Icm:92A; Rise Time:21ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 16A 32000mW 3-Pin(3+Tab) TO-220FP Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, SINGLE, 600V, 16A, TO-220FP; DC Collector Current: 16A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 32W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins
***ical
Trans IGBT Chip N-CH 600V 16A 32000mW 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
STGF19NC60HD Series 600 V 16 A Flange Mount Very Fast IGBT - TO-220FP
***r Electronics
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***el Electronic
STMICROELECTRONICS STGF19NC60HD IGBT Single Transistor, 16 A, 2.5 V, 35 W, 600 V, TO-220FP, 3 Pins
***icroelectronics
19 A, 600 V, very fast IGBT with Ultrafast diode
***nell
IGBT, N 600V 9A TO-220FP; DC Collector Current: 16A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 35W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins;
부분 # 제조 설명 재고 가격
SGP10N60RUFDTU
DISTI # V36:1790_06359360
ON SemiconductorDISCRETE, SHORT CIRCUIT RATED0
    SGP10N60RUFDTU
    DISTI # SGP10N60RUFDTUFS-ND
    ON SemiconductorIGBT 600V 16A 75W TO220
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    955In Stock
    • 1000:$1.0696
    • 500:$1.2785
    • 100:$1.5432
    • 10:$1.9060
    • 1:$2.1100
    SGP10N60RUFDTU
    DISTI # SGP10N60RUFDTU
    ON SemiconductorTrans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220 Rail (Alt: SGP10N60RUFDTU)
    RoHS: Compliant
    Min Qty: 1
    Europe - 0
    • 1:€1.0029
    • 10:€0.9119
    • 25:€0.8359
    • 50:€0.8019
    • 100:€0.7709
    • 500:€0.7429
    • 1000:€0.7159
    SGP10N60RUFDTU
    DISTI # SGP10N60RUFDTU
    ON SemiconductorTrans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube (Alt: SGP10N60RUFDTU)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube
    Americas - 0
    • 1000:$1.5900
    • 2000:$1.5900
    • 4000:$1.4900
    • 6000:$1.4900
    • 10000:$1.4900
    SGP10N60RUFDTU
    DISTI # SGP10N60RUFDTU
    ON SemiconductorTrans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220 Rail - Bulk (Alt: SGP10N60RUFDTU)
    RoHS: Compliant
    Min Qty: 317
    Container: Bulk
    Americas - 0
    • 269:$1.0319
    • 271:$1.0249
    • 540:$1.0119
    • 1345:$0.9999
    • 2690:$0.9749
    SGP10N60RUFDTU
    DISTI # 83C0922
    ON SemiconductorTRANSISTOR,IGBT,N-CHAN+DIODE,600V V(BR)CES,16A I(C),TO-220 ROHS COMPLIANT: YES0
    • 5000:$0.8630
    • 2500:$0.8890
    • 1000:$1.1100
    • 500:$1.2300
    • 100:$1.3300
    • 10:$1.6600
    • 1:$1.9500
    SGP10N60RUFDTU
    DISTI # 512-SGP10N60RUFDTU
    ON SemiconductorIGBT Transistors Dis Short Circuit Rated IGBT
    RoHS: Compliant
    1006
    • 1:$1.9500
    • 10:$1.6500
    • 100:$1.3200
    • 500:$1.1600
    • 1000:$0.9620
    • 2000:$0.8960
    • 5000:$0.8630
    SGP10N60RUFDTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB
    RoHS: Compliant
    769
    • 1000:$1.0400
    • 500:$1.0900
    • 100:$1.1400
    • 25:$1.1900
    • 1:$1.2800
    영상 부분 # 설명
    TLC7733QDR

    Mfr.#: TLC7733QDR

    OMO.#: OMO-TLC7733QDR

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    VS-HFA15TB60-M3

    Mfr.#: VS-HFA15TB60-M3

    OMO.#: OMO-VS-HFA15TB60-M3

    Rectifiers 600V 15A TO-220 HexFred
    HCPL-3140-000E

    Mfr.#: HCPL-3140-000E

    OMO.#: OMO-HCPL-3140-000E

    High Speed Optocouplers 0.4A IGBT Gate Drive
    FDC6324L

    Mfr.#: FDC6324L

    OMO.#: OMO-FDC6324L

    MOSFET SSOT-6 LOAD SW 20V
    MBRA2H100T3G

    Mfr.#: MBRA2H100T3G

    OMO.#: OMO-MBRA2H100T3G

    Schottky Diodes & Rectifiers 2A 100V
    LM79L05ACMX/NOPB

    Mfr.#: LM79L05ACMX/NOPB

    OMO.#: OMO-LM79L05ACMX-NOPB

    Linear Voltage Regulators 3-Terminal Negative Reg
    B32924C3475M000

    Mfr.#: B32924C3475M000

    OMO.#: OMO-B32924C3475M000

    Safety Capacitors 4.7uF 305V 20% 27.5mm L/S Class X2
    10114827-001LF

    Mfr.#: 10114827-001LF

    OMO.#: OMO-10114827-001LF

    Headers & Wire Housings Wire-to-Board,1.25mm Terminal,Tin plating
    HCPL-3140-000E

    Mfr.#: HCPL-3140-000E

    OMO.#: OMO-HCPL-3140-000E-BROADCOM

    High Speed Optocouplers 0.4A IGBT Gate Drive
    B32924C3475M000

    Mfr.#: B32924C3475M000

    OMO.#: OMO-B32924C3475M000-EPCOS

    Film Capacitors 4.7uF 305V 20% 27.5mm L/S Class X2
    유효성
    재고:
    904
    주문 시:
    2887
    수량 입력:
    SGP10N60RUFDTU의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$1.76
    US$1.76
    10
    US$1.50
    US$15.00
    100
    US$1.20
    US$120.00
    500
    US$1.05
    US$525.00
    1000
    US$0.87
    US$870.00
    2000
    US$0.81
    US$1 620.00
    5000
    US$0.78
    US$3 900.00
    10000
    US$0.75
    US$7 500.00
    시작
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