| PartNumber | APT75GP120JDQ3 | APT75GP120J | APT75GP120B2G |
| Description | IGBT Modules FG, IGBT-COMBI, 1200V, 75A, SOT-227 | IGBT Modules FG, IGBT, 1200V, 75A, SOT-227 | IGBT Transistors FG, IGBT, 1200V, TO-247 T-MAX, RoHS |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Transistors |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | 1.2 kV |
| Collector Emitter Saturation Voltage | 3.3 V | 3.3 V | 3.3 V |
| Continuous Collector Current at 25 C | 128 A | 128 A | 100 A |
| Gate Emitter Leakage Current | 100 nA | 100 nA | 100 nA |
| Pd Power Dissipation | 543 W | 543 W | 1.042 kW |
| Package / Case | SOT-227-4 | SOT-227-4 | T-Max-3 |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Packaging | Tube | Tube | Tube |
| Height | 9.6 mm | 9.6 mm | 5.31 mm |
| Length | 38.2 mm | 38.2 mm | 21.46 mm |
| Operating Temperature Range | - 55 C to + 150 C | - 55 C to + 150 C | - 55 C to + 150 C |
| Width | 25.4 mm | 25.4 mm | 16.26 mm |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | Chassis Mount | Through Hole |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 30 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Transistors |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Tradename | POWER MOS 7 IGBT, ISOTOP | POWER MOS 7 IGBT, ISOTOP | POWER MOS 7 IGBT |
| Unit Weight | 1.058219 oz | 1.058219 oz | - |
| Technology | - | - | Si |
| Configuration | - | - | Single |
| Continuous Collector Current Ic Max | - | - | 100 A |
| Continuous Collector Current | - | - | 100 A |